RF TRANSISTOR 2.5 GHZ Search Results

ericsson 20147

Abstract: PTB20147 RF TRANSISTOR 2.5 GHZ 20147 IEC-68-2-54
Contextual Info: e PTB 20147 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

IC 1820

Contextual Info: ERICSSON ^ PTB 20180 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

Contextual Info: e PTB 20180 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

9434

Abstract: ADC 50 Ghz RF NPN POWER TRANSISTOR 2.5 GHZ z-Source
Contextual Info: e PTB 20180 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

bvoe

Contextual Info: ERICSSON ^ PTB 20147 2.5 Watts, 1800 - 2000 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • • • The 20147 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 1.8-2.0 GHz frequency band. It is rated at 2.5 Watts minimum output

TE 1820

Contextual Info: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um outp ut power, it may be used fo r both CW and PEP

Contextual Info: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um ou tput power, it m ay be used fo r both CW and PEP

Contextual Info: ERICSSON ^ PTB 20078 2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

Inmarsat

Contextual Info: e PTB 20078 2.5 Watts, 1525–1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

202279m

Contextual Info: ERICSSON ^ PTB 20180 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20180 is a class AB, NIPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um ou tput power, it m ay be used for both C W and PEP

18W transistor

Contextual Info: ERICSSON ^ PTB 20180 2.5 Watts, 1800 - 2000 MHz Cellular Radio RF Power Transistor Prelim inary Description Key Features The 20180 is a class AB, NPN, common emitter R F Power Transistor intended for 26 V D C operation across the 1.8-2.0 GHz frequency band. It is rated at 2.5 Watts minimum output

fe 8622

Abstract: 422-371 23A025 521603 18896
Contextual Info: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

CRCW08050R0FKEA

Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
Contextual Info: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P

LTE21009R

Contextual Info: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 250 mA

mmbr901lt1

Abstract: 75 watt npn switching transistor MARKING 7A sot-23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

Contextual Info: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Gold Metalization • Emitter Ballasting Dim: A B C D E MAXIMUM RATINGS

c7a series vishay capacitor

Abstract: F1 J37 C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR
Contextual Info: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications

MRF901

Abstract: "Small Signal Amplifiers" VCEO-15V
Contextual Info: MRF901 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF901 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.5 GHz. Dim. Are in mm FEATURES: • Low Noise Figure • High Gain • Common Emitter MAXIMUM RATINGS

MPS901

Abstract: TDB O 117 SP BR901 MMBR901LT1 RF901 MMBR901
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed prim arily for use in high-gain, low -noise s m all-signal am plifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.

F1 J37

Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz
Contextual Info: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications

RF TRANSISTOR SOT23 5

Abstract: transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10
Contextual Info: BFS17A NPN Bipolar Silicon RF Transistor in plastic package SOT23 Attribute Value Configuration UOM NPN Function RF Package SOT23 VCEO max 15 V VCBO max 25 V VEBO max 2.5 V IC max 25 mA 200 mW Ptot max DC current gain Transition frequency min 20 @IE 2 mA @VCE

Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1,T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

MMBR901LT1

Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching