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    RF TRANSISTOR 10GHZ Search Results

    RF TRANSISTOR 10GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR 10GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP

    Untitled

    Abstract: No abstract text available
    Text: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD:

    RF TRANSISTOR 10GHZ

    Abstract: BFP720F C166 MHz MIPI
    Text: BFP720F SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-03-13 RF & Protection Devices Edition 2009-03-13 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720F BFP720F: RF TRANSISTOR 10GHZ BFP720F C166 MHz MIPI

    XPOSYS

    Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
    Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP 726-BFP640ESDE6327 640ESD E6327 XPOSYS gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb

    Untitled

    Abstract: No abstract text available
    Text: BFP840ESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP840ESD OT343 OT343-PO OT343-FP BFP840ESD: OT323-TP

    Untitled

    Abstract: No abstract text available
    Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR840L3RHESD BFR840L3RHESD:

    Untitled

    Abstract: No abstract text available
    Text: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP

    BFP640FESD

    Abstract: MIPI spec C166 JESD22-A114 NF50 X-GOLD RF Bipolar Transistor XPOSYS Germanium Transistor
    Text: BFP640FESD Robust SiGe:C Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2010-04-08 RF & Protection Devices Edition 2010-04-08 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP640FESD BFP640FESD: BFP640FESD MIPI spec C166 JESD22-A114 NF50 X-GOLD RF Bipolar Transistor XPOSYS Germanium Transistor

    BFP720F

    Abstract: BFP720FESD C166 JESD22-A114 NF50 BFP720 Germanium Transistor spice gummel
    Text: BFP720FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720FESD BFP720FESD: BFP720F BFP720FESD C166 JESD22-A114 NF50 BFP720 Germanium Transistor spice gummel

    VCO 9GHZ 10GHZ

    Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
    Text: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP VCO 9GHZ 10GHZ RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor

    BFP640ESD

    Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
    Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP BFP640ESD RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor

    Untitled

    Abstract: No abstract text available
    Text: BFP720FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720FESD BFP720FESD:

    Untitled

    Abstract: No abstract text available
    Text: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP840FESD BFP840FESD:

    Untitled

    Abstract: No abstract text available
    Text: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP

    spice gummel

    Abstract: bfp840 Germanium Transistor LNA ku-band
    Text: BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP840ESD OT343 OT343-PO OT343-FP BFP840ESD: OT323-TP spice gummel bfp840 Germanium Transistor LNA ku-band

    BFP840ESD

    Abstract: LNA ku-band bfp840 transistor RF S-parameters
    Text: BFP840ESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP840ESD OT343 OT343-PO OT343-FP BFP840ESD: OT323-TP BFP840ESD LNA ku-band bfp840 transistor RF S-parameters

    RF TRANSISTOR 10GHZ

    Abstract: BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters
    Text: BFP740ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP740ESD OT343 OT343-PO OT343-FP BFP740ESD: OT323-TP RF TRANSISTOR 10GHZ BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters

    BFP740FESD

    Abstract: gummel poon model parameter HBT C166 JESD22-A114 NF50 2.4ghz lnb Germanium Transistor transistor RF S-parameters infineon RF
    Text: BFP740FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP740FESD BFP740FESD: BFP740FESD gummel poon model parameter HBT C166 JESD22-A114 NF50 2.4ghz lnb Germanium Transistor transistor RF S-parameters infineon RF

    Untitled

    Abstract: No abstract text available
    Text: BFP720 SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-01-20 RF & Protection Devices Edition 2009-01-20 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720 OT343-PO OT343 OT343-FP BFP720: OT323-TP

    Untitled

    Abstract: No abstract text available
    Text: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD:

    Untitled

    Abstract: No abstract text available
    Text: BFP740FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-11 RF & Protection Devices Edition 2012-10-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP740FESD BFP740FESD:

    BFP720

    Abstract: RF Bipolar Transistor RF TRANSISTOR 10GHZ low noise RF TRANSISTOR 10GHZ C166 fm radio pcb
    Text: BFP720 SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-01-20 RF & Protection Devices Edition 2009-01-20 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720 OT343-PO OT343 OT343-FP BFP720: OT323-TP BFP720 RF Bipolar Transistor RF TRANSISTOR 10GHZ low noise RF TRANSISTOR 10GHZ C166 fm radio pcb

    BFP840F

    Abstract: Germanium Transistor spice gummel LNA ku-band
    Text: BFP840FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-03 RF & Protection Devices Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP840FESD BFP840FESD: BFP840F Germanium Transistor spice gummel LNA ku-band

    BFR840L3RHESD

    Abstract: Germanium Transistor LNA ku-band
    Text: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR840L3RHESD BFR840L3RHESD: BFR840L3RHESD Germanium Transistor LNA ku-band