RF TRANSISTOR 10 GHZ LOW NOISE Search Results

2SC5015

Abstract: 2SC5015-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation

2SC5013

Abstract: 2SC5013-T1 transistor r47 MARKINGR46 marking R46
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 10 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

Contextual Info: BFR750L3RH Linear Low Noise SiGe:C Bipolar RF Transistor • High gain ultra low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Provides outstanding performance for a wide range of wireless applications up to 10 GHz

2SC3356 s2p

Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

2SC3356

Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
Contextual Info: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

2SC3356 s2p

Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

2SC3357-T1-A

Contextual Info: NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz

nec 2501

Abstract: 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz

germanium transistor ac 128

Abstract: BFR740L3RH RF NPN POWER TRANSISTOR C 10-12 GHZ BFR705L3RH BFR740L3
Contextual Info: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

BFP740

Abstract: ultra low noise RF Transistor
Contextual Info: BFP740 3 NPN Silicon Germanium RF Transistor* 4 • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

BFR740L3RH

Abstract: BFR705L3RH GMA marking TP 180
Contextual Info: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

germanium transistor ac 128

Abstract: BFR705L3RH BFR740L3RH WLAN chip
Contextual Info: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 a wide range of wireless applications 1 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

NEC 9712

Abstract: 2SC5676
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA872TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC operation fT = 5.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz

marking 17 sot343

Abstract: marking R7s sot343
Contextual Info: BFP740 3 NPN Silicon Germanium RF Transistor* 4 • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

NEC TRANSISTOR MARKING CODE

Abstract: date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Germanium power

Abstract: BFR705L3RH TP5045
Contextual Info: BFR705L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor for low current operation 3 • Ideal for low power consumption LNA design 1 2 • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more

BFR705L3RH

Contextual Info: BFR705L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor for low current operation 3 • Ideal for low power consumption LNA design 1 2 • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more

Contextual Info: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

BFP740F

Abstract: TSFP-4
Contextual Info: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

BFR740L3

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ MARKING CODE R7 RF TRANSISTOR germanium transistors NPN
Contextual Info: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

MARKING CODE R7 RF TRANSISTOR

Contextual Info: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 1 a wide range of wireless applications up to 10 GHz and more 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

Contextual Info: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 3 1 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages

marking r8

Contextual Info: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 3 1 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages

transistor zs 35

Abstract: Germanium power
Contextual Info: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz