sot89 stencil
Abstract: sot89 land pattern Loctite 218 RG200 substrate 5989-0810EN LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun
Text: SOT89 Package Application Note 5051 Introduction PCB Land Pattern and Stencil Design Avago Technologies SOT89 is a 3 I/O pins Figure 1 package platform designed to offer excellent heat dissipation and wide RF frequency response. The SOT89 package itself is lead free with a dimension of 4.1 mm
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5989-0810EN
sot89 stencil
sot89 land pattern
Loctite 218
RG200 substrate
LOCTITE-96sc
Getek
LOCTITE 384
RG200
laser gun
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RF3375
Abstract: RF337XPCBA-41X
Text: DRAFT RF3375 DRAFT RF3375General Purpose Amplifier GENERAL PURPOSE AMPLIFIER Package Style: SOT89 GND NOT FOR NEW DESIGNS Features +28dBm Output IP3 +16.0dBm Output P1dB RF IN 1 Applications Basestation Applications Broadband, Low-Noise Gain Blocks
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RF3375
RF3375General
6000MHz
28dBm
RF3375
RF3375)
DS101122
RF337XPCBA-41X
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C1005C0G1H101JT000F
Abstract: Murata Moca 0402CS-5N6XJL
Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features 1 2 3 RF OUT GND 4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at
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RF3315Broadband
RF3315
200MHz
2200MHz
41dBm
900MHz
25dBm
900MHz
RF3315
C1005C0G1H101JT000F
Murata Moca
0402CS-5N6XJL
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Untitled
Abstract: No abstract text available
Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features 1 2 3 RF OUT GND 4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at
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RF3315
RF3315Broadband
200MHz
2200MHz
41dBm
900MHz
25dBm
RF3315
DS120530
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TK11230CM
Abstract: TK11230CU
Text: POWER&RF Io=300mA bipolar LDO regulator IC Io=300mA バイポーラ低飽和レギュレータIC TK112XXCM TK112XXCU TK113XXCM SOT23L-6 (SOT89-5) (SOT23L-6) DESCRIPTION The TK112XXCM type, the TK112XXCU type and the TK113XXCM type are bipolar LDO regulator ICs. The
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300mA
TK112XXCM
OT23L-6)
TK112XXCU
OT89-5)
TK113XXCM
TK112XXCM
TK112XXCU
TK11230CM
TK11230CU
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SON2017-6
Abstract: TK705XX
Text: POWER&RF Io=100mA bipolar LDO regulator IC Io=100mA バイポーラ低飽和レギュレータIC TK705XXS TK706XXH SOT23-5 (SON2017-6) DESCRIPTION The TK705XXS type, the TK706XXH type are bipolar LDO regulator ICs. The packages are SOT23L-6 and SOT89-5.
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100mA
TK705XXS
OT23-5)
TK706XXH
SON2017-6)
TK705XXS
TK706XXH
OT23L-6
OT89-5.
SON2017-6
TK705XX
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TK11230CM
Abstract: TK11230CU TK112XXCU TK113xxCM
Text: POWER&RF Io=300mA bipolar LDO regulator IC Io=300mA バイポーラ低飽和レギュレータIC TK112xxCM TK112xxCU TK113xxCM SOT23L-6 (SOT89-5) (SOT23L-6) DESCRIPTION The TK112xxCM type, the TK112xxCU type and the TK113xxCM type are bipolar LDO regulator ICs. The
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300mA
TK112xxCM
OT23L-6)
TK112xxCU
OT89-5)
TK113xxCM
TK112xxCM
TK112xxCU
TK11230CM
TK11230CU
TK113xxCM
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU590Q
BFU590Q
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU580Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU580Q
BFU580Q
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU590Q
BFU590Q
AEC-Q101
BFU590QX
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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3303R
Abstract: 39 77 in sot-89 package AGB3303RS24Q1 AGB3303 AGB3303S24Q1 agb3303r
Text: AGB3303 50Ω High Linearity Low Noise Wideband Gain Block Data Sheet - Rev 2.1 FEATURES • DC-4500 MHz Operation Bandwidth • +39 dBm Output IP3 at 850 MHz • 4 dB Noise Figure at 850 MHz • 21 dB Gain at 850 MHz • +19 dBm P1dB • SOT-89 Package •
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AGB3303
DC-4500
OT-89
OT-89
AGB3303
3303R
39 77 in sot-89 package
AGB3303RS24Q1
AGB3303S24Q1
agb3303r
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Untitled
Abstract: No abstract text available
Text: AGB3307 50Ω High Linearity Low Noise Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • 250-3000 MHz Frequency Range • +42 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 12 dB Gain at 850 MHz • +17.5 dBm P1dB at 1950 MHz
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AGB3307
OT-89
OT-89
AGB3307
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MF SOT89
Abstract: S21850
Text: AGB3302 50Ω High Linearity Low Noise Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • 250-3000 MHz Frequency Range • +36 dBm Output IP3 • 4.5 dB Noise Figure at 850 MHz • 16 dB Gain at 850 MHz • +18 dBm P1dB • SOT-89 Package •
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AGB3302
OT-89
OT-89
AGB3302
MF SOT89
S21850
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AGB3307RS24Q1
Abstract: AGB3307 AGB3307S24Q1 50W choke
Text: AGB3307 50Ω High Linearity Low Noise Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • DC-5500 MHz Operation Bandwidth • +42 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 12 dB Gain at 850 MHz • +17.5 dBm P1dB at 1950 MHz
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AGB3307
DC-5500
OT-89
OT-89
AGB3307
AGB3307RS24Q1
AGB3307S24Q1
50W choke
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Untitled
Abstract: No abstract text available
Text: AGB3306 50Ω High Linearity Low Noise Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • 250-3000 MHz Frequency Range • +27.5 dBm Output IP3 at 850 MHz • 4.5 dB Noise Figure at 850 MHz • 20.5 dB Gain at 850 MHz • +14.5 dBm P1dB at 1950 MHz
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AGB3306
OT-89
OT-89
AGB3306
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Untitled
Abstract: No abstract text available
Text: AGB3309 50Ω High Linearity Low Noise Internally Biased Wideband Gain Block ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • On-chip Active Bias • 250-3000 MHz Frequency Range • +35 dBm Output IP3 • 5 dB Noise Figure at 850 MHz • 15 dB Gain at 850 MHz
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AGB3309
OT-89
OT-89
AGB3309
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Untitled
Abstract: No abstract text available
Text: AGB3310 50Ω High Linearity Low Noise Internally Biased Wideband Gain Block ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • On-chip Active Bias • 250-3000 MHz Frequency Range • +37 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 19 dB Gain at 850 MHz
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AGB3310
OT-89
OT-89
AGB3310
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O A B C sot-89
Abstract: GRM39 0603CS AGB3304 AGB3304S24Q1
Text: AGB3304 50Ω High IP3 Low Noise Wideband Gain Block ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • On-chip Active Bias • 250-2500 MHz Frequency Range • +39 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 18 dB Gain at 850 MHz • +22 dBm P1dB
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AGB3304
OT-89
OT-89
AGB3304
O A B C sot-89
GRM39
0603CS
AGB3304S24Q1
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Untitled
Abstract: No abstract text available
Text: AGB3311 50Ω High Linearity Low Noise Internally Biased Wideband Gain Block ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • On-chip Active Bias • 250-3000 MHz Frequency Range • +27 dBm Output IP3 • 6 dB Noise Figure at 850 MHz • 20 dB Gain at 850 MHz
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AGB3311
OT-89
OT-89
AGB3311
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Untitled
Abstract: No abstract text available
Text: AGB3312 50Ω High Linearity Low Noise Internally Biased Wideband Gain Block ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • On-chip Active Bias • 250-3000 MHz Frequency Range • +42 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 11 dB Gain
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AGB3312
OT-89
OT-89
AGB3312
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Amplifier SOT-89 c4
Abstract: TAT7460 0402CS-2N4XL BLM15AG102SN1 C2 SOT-89 RF amplifier MLK1005S2N7S UVK105CH0R7BW rf sot89
Text: 75 Ohm RF Amplifier 50-2600 MHz TAT7460 Preliminary Product Datasheet Overview The TAT7460 is a 75 Ohm RF Amplifier designed for use up to 2600 MHz, addressing the CATV and Satellite bands in a single part. The TAT7460 is fabricated using 6-inch GaAs pHEMT technology to optimize performance
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TAT7460
TAT7460
100mA
OT-89
R81012
Amplifier SOT-89 c4
0402CS-2N4XL
BLM15AG102SN1
C2 SOT-89 RF amplifier
MLK1005S2N7S
UVK105CH0R7BW
rf sot89
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0603CS
Abstract: AGB3311 AGB3311S24Q1 GRM39
Text: AGB3311 50Ω High Linearity Low Noise Internally Biased Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • On-chip Active Bias • DC-4500 MHz Operation Bandwidth • +27 dBm Output IP3 • 6 dB Noise Figure at 850 MHz • 20 dB Gain at 850 MHz
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AGB3311
DC-4500
OT-89
OT-89
AGB3311
0603CS
AGB3311S24Q1
GRM39
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BFG591 amplifier
Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
Text: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17
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OCR Scan
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BF689K
BF763
BFT25
BF747
BF547
BFS17
BFS17A
BFR53
BFQ17
BFG17A
BFG591 amplifier
BFM520
BFM505
BFC505
BFC520
BFE505
sot172
Philips Semiconductors Selection Guide
S0T343
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