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    RF POWER W AN Search Results

    RF POWER W AN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
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    RF POWER W AN Price and Stock

    TDK-Lambda Corporation RWS1500B-48/RF

    Enclosed AC/DC Converter - 1500 W - 88% Efficiency - Output 48V 32A - 85 to 265 VAC, 120 to 340 VDC Input - Reverse Fan (Air Exits Over IO Terminals).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com RWS1500B-48/RF
    • 1 $526.18
    • 10 $509.57
    • 100 $472.63
    • 1000 $472.63
    • 10000 $472.63
    		Buy Now

    TDK-Lambda Corporation RWS1000B-24/RF

    Enclosed AC/DC Converter - 1000 W - 88% Efficiency - Output 24V 42A - 85 to 265 VAC, 120 to 340 VDC Input - Reverse Fan (Air Exits Over IO Terminals).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com RWS1000B-24/RF
    • 1 $404.33
    • 10 $393.25
    • 100 $350.96
    • 1000 $350.96
    • 10000 $350.96
    		Buy Now

    TDK-Lambda Corporation RWS1000B-36/RF

    Enclosed AC/DC Converter - 1000 W - 88% Efficiency - Output 36V 28A - 85 to 265 VAC, 120 to 340 VDC Input - Reverse Fan (Air Exits Over IO Terminals).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com RWS1000B-36/RF
    • 1 $404.33
    • 10 $393.25
    • 100 $350.96
    • 1000 $350.96
    • 10000 $350.96
    		Buy Now

    TDK-Lambda Corporation RWS1000B-48/RF

    Enclosed AC/DC Converter - 1000 W - 88% Efficiency - Output 48V 21A - 85 to 265 VAC, 120 to 340 VDC Input - Reverse Fan (Air Exits Over IO Terminals).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com RWS1000B-48/RF
    • 1 $404.33
    • 10 $393.25
    • 100 $350.96
    • 1000 $350.96
    • 10000 $350.96
    		Buy Now

    TDK-Lambda Corporation RWS1500B-24/RF

    Enclosed AC/DC Converter - 1500 W - 88% Efficiency - Output 24V 63A - 85 to 265 VAC, 120 to 340 VDC Input - Reverse Fan (Air Exits Over IO Terminals).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com RWS1500B-24/RF
    • 1 $526.18
    • 10 $509.57
    • 100 $472.63
    • 1000 $472.63
    • 10000 $472.63
    		Buy Now
    Find more RF POWER W AN price and stock on Findchips.com

    RF POWER W AN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DSSS transceiver

    Abstract: CyFi protocol stack CY3210 CYRF7936 CyFi CHIPS TECHNOLOGIES IDE CY3271 Cypress touch CR2032 cy327
    Text: C y F i L O W- P O W E R R F S O LUTIONS CYPRESS C y F i LOW-POWER RF SOLUTIONS RELIABLE. SIMPLE. POWER-EFFICIENT. C y F i LOW-POWER RF SOLUTIONS THE C y F i LOW-POWER RF SOLUTION PROVEN RF EXPERTISE OPTIMIZING WIRELESS RELIABILITY, RANGE, AND BATTERY LIFE


    Original     		PDF X-XX08CyFiBro DSSS transceiver CyFi protocol stack CY3210 CYRF7936 CyFi CHIPS TECHNOLOGIES IDE CY3271 Cypress touch CR2032 cy327

    Untitled

    Abstract: No abstract text available
    Text: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR Lead free and RoHS compliant* ■ High power RF transmission CHF11050CBF Series 400 W Power RF Flanged Resistor Absolute Ratings W


    Original     		PDF CHF11050CBF AL203 2002/95/EC

    flange RF resistor 50

    Abstract: resistor rohs
    Text: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR Lead free and RoHS compliant* ■ High power RF transmission CHF11050CBF Series 400 W Power RF Flanged Resistor Absolute Ratings W


    Original     		PDF CHF11050CBF AL203 2002/95/EC SR0710 flange RF resistor 50 resistor rohs

    flange RF resistor 50

    Abstract: AL203 resistor rohs flange RF termination 50
    Text: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR Lead free and RoHS compliant* ■ High power RF transmission CHF11050CBF Series 400 W Power RF Flanged Resistor Absolute Ratings W


    Original     		PDF CHF11050CBF AL203 2002/95/EC flange RF resistor 50 AL203 resistor rohs flange RF termination 50

    Untitled

    Abstract: No abstract text available
    Text: NXP LDMOS RF power transistor BLF578 LDMOS RF power transistor delivering 1000 W of CW output power Delivering 1000 W of CW output power with 26 dB of gain and 75% efficiency, this rugged LDMOS device is ideally suited for use in broadcast transmitters and industrial, scientific and


    Original     		PDF BLF578

    powermax

    Abstract: No abstract text available
    Text: 8-Module C‐Band Systems SSPA Module Power Level 8-Module RF Output Power 16‐Module C‐Band Systems 7-Module Redundant RF Output Power SSPA Module Power Level 16-Module RF Output Power 15-Module Redundant RF Output Power Psat typical dBm (W)


    Original     		PDF 16-Module 15-Module powermax

    78L08

    Abstract: BLF7G22LS-130 MMBT2222 2N2222 nxp 544
    Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 02 — 25 February 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


    Original     		PDF AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 78L08 MMBT2222 2N2222 nxp 544

    NJM 78L08UA-ND

    Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor
    Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


    Original     		PDF AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 NJM 78L08UA-ND nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor

    VK200 19 4B INDUCTOR

    Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor

    MHW1916

    Abstract: No abstract text available
    Text: MOTOROLA The RF Line MHW1916 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances 15 W 1930 – 1990 MHz RF POWER AMPLIFIER


    Original     		PDF MHW1916 301AK MHW1916

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA The RF Line MHW1815 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1805–1880 MHz RF POWER AMPLIFIER


    Original     		PDF MHW1815/D 301AK MHW1815 MHW1815/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA The RF Line MHW1915 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930–1990 MHz RF POWER AMPLIFIER


    Original     		PDF MHW1915/D 301AK MHW1915 MHW1915/D

    capacitor 0805 avx

    Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		PDF MRF21010 MRF21010 capacitor 0805 avx 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23

    TPS9103

    Abstract: MOSFET FOR AMP POWER SUPPLY SWITCHING depletion MOSFET 1 amp FET switch GaAs FET chip
    Text: P O W E R S U P P L Y Product Features • Fully-integrated GaAs power amplifier power supply ■ 180-mΩ RDS on high side switch with logic-compatible input Power supply for GaAs power amplifiers Antenna RF Microphone VBAP VBAP Speaker DSP DSP RF RF CODEC


    Original     		PDF 180-m TCM320AC36/37 TMS320C5x TPS9103 TPS9103 50-kHz MOSFET FOR AMP POWER SUPPLY SWITCHING depletion MOSFET 1 amp FET switch GaAs FET chip

    vk200* FERROXCUBE

    Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -4 0 0 MHz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . . . designed fo r w ideband large-signal o utp ut and d river stages in the 2.0 to 400 MHz range


    OCR Scan     		PDF MRF137 vk200* FERROXCUBE 3950K MOTOROLA TRANSISTOR 974

    2N3553 equivalent

    Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
    Text: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz


    OCR Scan     		PDF MM4019 2N3553 MM4019/2N3553 ATC-200 2N3553 equivalent vk-200 ferrite choke vk200* FERROXCUBE VK-200 VK200 MM4019 ATC200

    Motorola transistors MRF455

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —


    OCR Scan     		PDF iF/15 VK200-20/4B, 56-590-65/3B MRF455 Motorola transistors MRF455

    MRF161

    Abstract: J141 mosfet fet j141
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF161 The RF MOSFET Line 5.0 W 2 .0 -4 0 0 MHz N-CHANNEL MOS BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR . . . designed fo r w id e b a n d large-signal a m p lifie r and o scillato r


    OCR Scan     		PDF MRF161 MRF161, MRF161 J141 mosfet fet j141

    MRF163

    Abstract: Motorola AN211
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF163 The RF MOSFET Line 25 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER designed for w ideband large-signal output and driver applica tions in the 2 0 to 4 00 MHz range


    OCR Scan     		PDF MRF163 RF163 MRF163 Motorola AN211

    MRF255 equivalent

    Abstract: electrolytic capacitor 470 mrf255
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies


    OCR Scan     		PDF MRF255 MRF255 equivalent electrolytic capacitor 470

    MRF454 motorola

    Abstract: ferroxcube 56-590-65 56590653B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF454 NPN Silicon RF Power TVansistor . . . designed for power am plifier applications in industrial, commercial and am ateur radio equipment to 30 MHz. • 80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —


    OCR Scan     		PDF MRF454 MRF454 nF/15 VK200-20/4B, 56-590-65/3B MRF454 motorola ferroxcube 56-590-65 56590653B

    J476

    Abstract: capacitor j476 NALCO
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package


    OCR Scan     		PDF MRF2628 J476 capacitor j476 NALCO

    te 2443 MOTOROLA transistor

    Abstract: 1S2210 MOSFET 830 63 ng MRF171
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 45 W N-C H A N N E L M O S BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . designed p rim a rily fo r w ideband large-signal output and driver stages in the 2 .0 -2 0 0 MHz frequency range


    OCR Scan     		PDF MRF171 MRF171 te 2443 MOTOROLA transistor 1S2210 MOSFET 830 63 ng

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1915 Microwave Bipolar Power Am plifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930-1990 MHz RF POWER AMPLIFIER


    OCR Scan     		PDF MHW1915 301AK--01, MHW1915