RF POWER TRANSISTOR H2 Search Results

MRF477

Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear

2SC2097

Abstract: transistor 91 330 T40E
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm fo r RF power am p lifie rs in HF band m ob ile radio applications. R1

Contextual Info: MITSUBISHI RF POWER TRANSISTOR □GITb'ìS =H2 2SC3630 NPN EPITAXIAL PLANAR T YPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi­ cally designed fo r U HF power am plifiers applications. OUTLINE DRAWING Dim ensions in mm FEATURES

H2 SOT-89 RF amplifier

Abstract: GRM188R71H104KA01 sot-89 H3 uhf gp bjt START499D
Contextual Info: DB-499D-470 RF power amplifier using 1 x START499D NPN RF silicon transistor Preliminary Data Features • Excellent thermal stability ■ Frequency: 430 - 470 MHz ■ Supply voltage: 3.6 V ■ Output power: 29 dBm ■ Power gain: 19 dB ■ Efficiency: 52 %

transistor marking G9

Abstract: J4-81 j4 81 MARKING D8
Contextual Info: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package

Contextual Info: STAC4933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package

TIC 136 Transistor

Abstract: mrf475 tic 136 mrf475 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF475 The RF Line 12 W PEP — 12 W (CW) — 30 MHz NPN SILICON RF POWER TRANSISTOR R F POWER TRANSISTO R . . . designed prim arily for use in single sideband linear amplifier output applications in citizens band and other communications

MRF340

Abstract: AMO 0210 transistor s97
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE » b3b?aS4 • SEMICONDUCTOR ■■ OOTMS^ 3 ■ T -3 3 -0 5 TECHNICAL DATA MRF340 The RF Line 8W 100-150 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR N PN S IL IC O N . . .designed p rim arily for use in V H F am plifiers w ith amplitude

Contextual Info: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz

NV SMD TRANSISTOR

Abstract: AN1294 UHF rfid reader ma706
Contextual Info: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■

PD85004

Abstract: PD85004 ST 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 J-STD-020B PD84002 marking c7 sot-89 marking code murata label
Contextual Info: PD85004 RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

13786

Abstract: L1320
Contextual Info: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

mc3363 application note

Abstract: CFW455 SFE10.7MS2-A j350 TRANSISTOR H1 SOT-89 transistor rf MC3357 application note MC3363DW
Contextual Info: MC3363 Low Power Dual Conversion FM Receiver The MC3363 is a single chip narrowband VHF FM radio receiver. It is a dual conversion receiver with RF amplifier transistor, oscillators, mixers, quadrature detector, meter drive/carrier detect and mute circuitry. The

sot89 h3

Abstract: .H2 MARKING SOT-89 marking h2 sot-89 marking .H2 sot89 PD85004
Contextual Info: PD85004 RF power transistor The LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

PD85006

Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208
Contextual Info: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package

PD85006

Abstract: PD85006-E 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J
Contextual Info: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package

PD84002

Abstract: J-STD-020B 3214W-1-103E EXCELDRC35C GRM39-C0G3R3C50Z500 GRM39-X5R105K16D52K STMicroelectronics marking code date sot-89 L38L38
Contextual Info: PD84002 RF power transistor The LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 2 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

transistor NF j1 marking code

Abstract: PD84006L-E EEVHB1V100P EXCELDRC35C J-STD-020B UHF rfid reader grm39
Contextual Info: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

STAC2942B

Abstract: stac2942 FERRITE TOROID R0060
Contextual Info: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an

PD84002

Abstract: PD85006L-E smd transistor marking C14 SMD diode marking L39 3214W-1-103E EXCELDRC35C J-STD-020B PD85 TRANSISTOR AO SMD MARKING 0603 footprint FERRITE BEAD INDUCTOR
Contextual Info: PD85006L-E RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european

STAC2942

Abstract: STAC244 STAC2942B-I FERRITE TOROID R4270
Contextual Info: STAC2942B-I RF power transistor HF/VHF/UHF N-channel MOSFETs Custom data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

2N3924

Abstract: 2n3924 equivalent
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 2N3924 T h e R F Line NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . o p t i m iz e d A n n u l a r t r a n s i s t o r f o r l a r g e - s i g n a l p o w e r a m p l if i e r a n d d r iv e r a p p l i c a t i o n s t o 3 0 0 M H z .

Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european