RF OUTPUT POWER TRANSISTOR Search Results

nec 2501

Abstract: ic nec 2501 NESG250134 2501 NEC
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification

Contextual Info: NXP LDMOS RF power transistor BLF578 LDMOS RF power transistor delivering 1000 W of CW output power Delivering 1000 W of CW output power with 26 dB of gain and 75% efficiency, this rugged LDMOS device is ideally suited for use in broadcast transmitters and industrial, scientific and

20191 ic

Contextual Info: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.

Contextual Info: ERICSSON ^ PTB 20191 12 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.

L450A

Abstract: NPN transistor 5 watts Ericsson RF POWER TRANSISTOR
Contextual Info: ERICSSON ^ PTE 20231 * 18 Watts, 2.1-2.2 GHz Cellular Radio RF Power Transistor Description The 20231 isaclassA/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Bated at 18 watts minimum output power in class AB and 8 watts minimum output power

20191

Contextual Info: ERICSSON $ PTB 20191 12 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20191 is a class AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated at 12 Watts minimum output power (CW) or 15 Watts output power (PEP).

motorola rf Power Transistor mrf317

Abstract: hfc4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts

equivalent for transistor tt 2206

Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts

VK200-19

Abstract: motorola 2395 JMC5601 NPN/TE 2395 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts

NESG260234

Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

NESG270034

Abstract: ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

1005 Ic Data

Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

murata ma

Abstract: MURATA/murata ma
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz

nec 2012

Abstract: NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

SOT123 Package

Abstract: BLV62 BLW33 BLX98 BLF147 BLF175 SOT-48 bfr96s SOT123
Contextual Info: 64 RF/Microwave Devices Bipolar RF Transmitting Transistors TV Transposers/Transmitters co n t. Type No. Output Power @ djm Package Outline SYNC (W) (dB) Output Power P0 - IdB (W) Power Gain (dB) Supply Voltage (V) 115 225 11 9.0 28 35 10 11 11 6 10 10 5.5

TVU012

Abstract: 420 NPN Silicon RF Transistor ASI10646
Contextual Info: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.

XP1013-BD

Abstract: DM6030HK TS3332LD XP1013 XP1013-BD-000V XP1013-BD-EV1
Contextual Info: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013-BD August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

DM6030HK

Abstract: TS3332LD XP1013 XP1013-BD XP1013-BD-000V XP1013-BD-EV1
Contextual Info: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013-BD August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

56590653B

Abstract: AN 240 Motorola 2305 transistor MRF316 Motorola MRF316
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF316 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 W atts

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,

nec 2501

Abstract: 2501 NEC ic nec 2501 NESG260234
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

NESG260234

Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

ic nec 2501

Abstract: NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz