RF NPN POWER TRANSISTOR 60W Search Results

RF NPN POWER TRANSISTOR 60W Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

RF NPN POWER TRANSISTOR 60W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC2134 Contextual Info: MITSUBISHI RF POWER TRANSISTOR bZinflBR QQ175flb TTT NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm	OCR Scan	QQ175flb 2SC2134 220MHz	PDF
2SC2134 Abstract: RF NPN POWER TRANSISTOR 60w vhf power transistor 50W Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2134 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm R1 applications.	OCR Scan	2SC2134 220MHz 220MHz, RF NPN POWER TRANSISTOR 60w vhf power transistor 50W	PDF
transistor 2sc2630 Abstract: 2SC2630 pin 2sc2630 T-40 RF POWER TRANSISTOR NPN vhf 50w rf power transistor mitsubishi RF POWER TRANSISTOR Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2630 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2630 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers in V H F band m obile radio applications. R1 FEATURES	OCR Scan	2SC2630 175MHz 175MHz, 175MHz 2SC2630 transistor 2sc2630 pin 2sc2630 T-40 RF POWER TRANSISTOR NPN vhf 50w rf power transistor mitsubishi RF POWER TRANSISTOR	PDF
UPB2060 Contextual Info: UPB2060 60W PEP, 1.8-2.0 GHz, 26V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB2060 is a high-power COMMON EMITTER bipolar transistor capable of providing 60 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed	Original	UPB2060 UPB2060 400mA 491w6	PDF
air variable capacitor Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES	OCR Scan	2SC3102 2SC3102 PoS60W, 520MHz, 520MHz. 520MHz) 100pF to10pF air variable capacitor POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC310 mica capacitor mica material capacitor murata pir	PDF
NTE368 Abstract: transistor C 548 B Contextual Info: NTE368 Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic:	Original	NTE368 512MHz NTE368 512MHz. 470MHz 470MHz, transistor C 548 B	PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES	OCR Scan	2SC3102 2SC3102 520MHz, 520MHz. 520MHz) 100pF to10pF to20pF	PDF
POWER TRANSISTOR 2sC3102 Abstract: 2SC3102 RF NPN POWER TRANSISTOR 60w Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES	OCR Scan	2SC3102 2SC3102 520MHz, 520MHz. 520MHz) POWER TRANSISTOR 2sC3102 RF NPN POWER TRANSISTOR 60w	PDF
Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi- OUTLINE DRAWING	Original	2SC3102 2SC3102 520MHz, 520MHz. 20n-A.	PDF
MRF455 Abstract: MRF455 APPLICATION NOTES TRANSISTOR mrf455 Contextual Info: MRF455 The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V M/A-COM Products Released - Rev. 05202009 Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 V, 30 MHz characteristics —	Original	MRF455 30MHz, MRF455 MRF455 APPLICATION NOTES TRANSISTOR mrf455	PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2630 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 6 3 0 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm FU	OCR Scan	2SC2630	PDF
nte360 Contextual Info: NTE360 Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz Description: The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: • Specified 28 Volt, 175MHz Characteristics: Output Power = 40 Watts	Original	NTE360 175MHz NTE360 125-175MHz 175MHz 500mA, 8-32-NC-3A	PDF
2n6439 Abstract: 2n6439 TRANSISTOR rf power amplifier 400MHz RF NPN POWER TRANSISTOR 60w Contextual Info: 2N6439 The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • • • • Product Image Guaranteed performance in 225 to 400 MHz broadband amplifier @ 28 Vdc	Original	2N6439 400MHz, 2n6439 2n6439 TRANSISTOR rf power amplifier 400MHz RF NPN POWER TRANSISTOR 60w	PDF
6 pin TRANSISTOR SMD CODE CAA Abstract: TEA6721 BF991 spice model Contextual Info: RF マニュアル第 16 版ハイパフォーマンスRF製品用のアプリケーションおよび設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォーマンスがさらに向上 NXPの RF マニュアルは、	Original		PDF

Contextual Info: MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 150 MHz 28 VOLTS POUT = 60W GP = 7.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the	Original	MS1329 MS1629 200mA	PDF
MS1329 Contextual Info: MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 150 MHz 28 VOLTS POUT = 60W GP = 7.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the	Original	MS1329 MS1629 200mA MS1329	PDF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1496 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS Pout = 60WATTS Gp = 7.5 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION	Original	SD1496 60WATTS SD1496 900MHz	PDF
transistor j5 Contextual Info: SD1496 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS Pout = 60WATTS Gp = 7.5 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION DESCRIPTION: The SD1496 is a silicon NPN transistor designed for 860 900 MHz base station applications. Gold metalization and	Original	SD1496 60WATTS SD1496 900MHz transistor j5	PDF
118-136 Abstract: 118-136 mhz Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 150 MHz 28 VOLTS POUT = 60W GP = 7.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION:	Original	MS1329 MS1629 118-136 118-136 mhz	PDF
Contextual Info: BUX82 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)	Original	BUX82 BUX82 204AA	PDF
BUX82 Abstract: transistor 800V 1A Contextual Info: BUX82 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)	Original	BUX82 BUX82 204AA transistor 800V 1A	PDF
chw marking sot23 Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu	OCR Scan		PDF
relay Re 04501 Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031 Contextual Info: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997	OCR Scan	ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101	PDF

RF NPN POWER TRANSISTOR 60W Search Results

RF NPN POWER TRANSISTOR 60W Result Highlights (5)

RF NPN POWER TRANSISTOR 60W Datasheets Context Search

2SC2134

2SC2134

transistor 2sc2630

UPB2060

air variable capacitor

NTE368

POWER TRANSISTOR 2sC3102

MRF455

nte360

2n6439

6 pin TRANSISTOR SMD CODE CAA

MS1329

transistor j5

118-136

BUX82

chw marking sot23

relay Re 04501

2SC3355 SPICE MODEL