ericsson 20147
Abstract: PTB20147 RF TRANSISTOR 2.5 GHZ 20147 IEC-68-2-54
Text: e PTB 20147 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP
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IEC-68-2-54
Std-002-A
1-877-GOLDMOS
1301-PTB
ericsson 20147
PTB20147
RF TRANSISTOR 2.5 GHZ
20147
IEC-68-2-54
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Untitled
Abstract: No abstract text available
Text: e PTB 20180 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP
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1-877-GOLDMOS
1301-PTB
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9434
Abstract: ADC 50 Ghz RF NPN POWER TRANSISTOR 2.5 GHZ z-Source
Text: e PTB 20180 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP
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1-877-GOLDMOS
1301-PTB
9434
ADC 50 Ghz
RF NPN POWER TRANSISTOR 2.5 GHZ
z-Source
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Inmarsat
Abstract: No abstract text available
Text: e PTB 20078 2.5 Watts, 1525–1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP
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1-877-GOLDMOS
1301-PTB
Inmarsat
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LTE21009R
Abstract: No abstract text available
Text: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 250 mA
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LTE21009R
LTE21009R
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Untitled
Abstract: No abstract text available
Text: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Gold Metalization • Emitter Ballasting Dim: A B C D E MAXIMUM RATINGS
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LTE21009R
LTE21009R
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bfy90
Abstract: No abstract text available
Text: BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB typ @ 500 MHz, 5v, 2.0 mA, • 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 • 1 Power Gain, GPE = 19 dB (typ) @ 200 MHz
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BFY90
To-72
bfy90
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A03 transistor
Abstract: BFY280
Text: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥
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Q97302026
Q97111414
BFY280
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
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BFR180W
Abstract: No abstract text available
Text: BFR180W NPN Silicon RF Transistor 3 For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR180W
VSO05561
OT323
BFR180W
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bfr180
Abstract: 61V8
Text: BFR180 NPN Silicon RF Transistor 3 For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR180
VPS05161
900MHz
Jun-27-2001
bfr180
61V8
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Untitled
Abstract: No abstract text available
Text: BFR180 NPN Silicon RF Transistor 3 For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR180
VPS05161
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Untitled
Abstract: No abstract text available
Text: BFR 180 NPN Silicon RF Transistor 3 For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05161
OT-23
900MHz
Oct-13-1999
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transistor equivalent
Abstract: BFR 30 transistor VSO05561
Text: BFR 180W NPN Silicon RF Transistor 3 For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VSO05561
OT-323
900MHz
Oct-13-1999
transistor equivalent
BFR 30 transistor
VSO05561
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BFR180W
Abstract: VSO05561
Text: BFR180W NPN Silicon RF Transistor 3 For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR180W
VSO05561
OT323
900MHz
Jun-13-2001
BFR180W
VSO05561
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VPS05178
Abstract: No abstract text available
Text: BFP 180 NPN Silicon RF Transistor 3 For low-power amplifiers in mobile communication systems pager at collector 4 currents from 0.2 mA to 2.5 mA f T = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05178
OT-143
900MHz
Oct-12-1999
VPS05178
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Untitled
Abstract: No abstract text available
Text: BFP180W NPN Silicon RF Transistor 3 For low-power amplifier in mobile 4 communication systems pager at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP180W
VPS05605
OT343
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IC 1820
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20180 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20078 2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP
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TE 1820
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um outp ut power, it may be used fo r both CW and PEP
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um ou tput power, it m ay be used fo r both CW and PEP
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IEC-68-2-54
Std-002-A
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bvoe
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20147 2.5 Watts, 1800 - 2000 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • • • The 20147 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 1.8-2.0 GHz frequency band. It is rated at 2.5 Watts minimum output
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18W transistor
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20180 2.5 Watts, 1800 - 2000 MHz Cellular Radio RF Power Transistor Prelim inary Description Key Features The 20180 is a class AB, NPN, common emitter R F Power Transistor intended for 26 V D C operation across the 1.8-2.0 GHz frequency band. It is rated at 2.5 Watts minimum output
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250mA
18W transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •
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BFY180
Q97301013
Q97111419
BFY180
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz
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Q97302026
Q97111414
BFY280
de/semiconductor/products/35/35
de/semiconductor/products/35/353
BFY280
GXM05552
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