Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF MOSFET Search Results

    RF MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    RF MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original
    PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original
    PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original
    PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    sc74750

    Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
    Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes


    Original
    PDF OT346 SC-59) sc74750 MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921

    transistor 6c x

    Abstract: MRF9060 MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060S MRF9060SR1
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original
    PDF MRF9060 MRF9060S MRF9060Sal MRF9060 MRF9060S MRF9060SR1 RDMRF9060NCDMA transistor 6c x MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060SR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF284 MRF284S US CDMA The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors Freescale Semiconductor, Inc.


    Original
    PDF MRF284 MRF284S RDMRF284USCDMA MRF284 MRF284S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET


    Original
    PDF MRF9045MR1 RDMRF9045MR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line MRF9080 MRF9080S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original
    PDF MRF9080 MRF9080S MRF9080 RDMRF9080GSM

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original
    PDF MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 RDMRF5S21130UMTS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original
    PDF MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs W–CDMA 2.11–2.17 GHz


    Original
    PDF MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 RDMRF5S21130UMTS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF21125 Wideband CDMA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs


    Original
    PDF MRF21125 MRF21125 RDMRF21125WCDMA

    motorola sps transistor

    Abstract: MRF21010
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet


    Original
    PDF MRF21010 RDMRF21010NCDMA motorola sps transistor MRF21010

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet


    Original
    PDF MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original
    PDF MRF21125 RDMRF21125WCDMA

    2sk170bl spice

    Abstract: 2SK170BL BF256B PHILIPS SEMICONDUCTOR UHF preamplifier for BF998 small signal transistor philips manual philips BFG235 motorola power fet rf databook BB140-01 small signal transistor MOTOROLA DATABOOK Philips X7R capacitors
    Text: RF Manual product & design manual for RF small signal discretes Page: 1 RF Manual product & design manual for RF small signal discretes Volume 0 March 2002 RF Manual product & design manual for RF small signal discretes Content 1. 2. 3. 4. Introduction RF Basics


    Original
    PDF BGA2003 BGA2022 BFG425W 2sk170bl spice 2SK170BL BF256B PHILIPS SEMICONDUCTOR UHF preamplifier for BF998 small signal transistor philips manual philips BFG235 motorola power fet rf databook BB140-01 small signal transistor MOTOROLA DATABOOK Philips X7R capacitors

    A3845ELW

    Abstract: No abstract text available
    Text: Data Sheet 27126B* 3845 AM NOISE BLANKER RF IN RF BYPASS VCC 1 NC 2 DET 20 SUPPLY 19 NO CONNECT 18 RF GATE LOW RF GATE HIGH RF BIAS 3 RF AGC 4 17 AUDIO DELAY 5 16 AUDIO BLANK TIME R A high input impedance, high-gain, broadband RF amplifier permits these devices to be directly connected to the RF stage of a


    Original
    PDF A3845ELW A3845SLW MA-008-20

    us3845

    Abstract: PS-0031 RF Amplifier AM receiver car mosfet audio amplifier diagram A3845ELW AUDIO DELAY CIRCUIT DIAGRAM car ignition circuit diagram motorola automotive transistor coil ignition Toko 7TRS audio mosfet
    Text: 3845 Data Sheet 27126A 3845 AM NOISE BLANKER AM NOISE BLANKER RF IN 1 VCC 20 SUPPLY RF BYPASS 2 NC 19 NO CONNECT RF BIAS 3 18 RF GATE LOW RF AGC 4 17 RF GATE HIGH AUDIO DELAY 5 16 GROUND DET AUDIO BLANK TIME R 6 15 RF BLANK TIME AUDIO BLANK TIME (C) 7 14


    Original
    PDF 7126A PS-003-1 us3845 PS-0031 RF Amplifier AM receiver car mosfet audio amplifier diagram A3845ELW AUDIO DELAY CIRCUIT DIAGRAM car ignition circuit diagram motorola automotive transistor coil ignition Toko 7TRS audio mosfet

    AUDIO DELAY CIRCUIT DIAGRAM

    Abstract: audio mosfet Toko 7TRS A3845ELW 3845 motorola automotive transistor coil ignition motorola transistor ignition 500 w mosfet audio amplifier diagram PS-0031 car mosfet audio amplifier diagram
    Text: Data Sheet 27126B* 3845 AM NOISE BLANKER RF IN RF BYPASS VCC 1 NC 2 DET 20 SUPPLY 19 NO CONNECT 18 RF GATE LOW RF GATE HIGH RF BIAS 3 RF AGC 4 17 AUDIO DELAY 5 16 GROUND 15 RF BLANK TIME 14 NO CONNECT AUDIO BLANK TIME R 6 NO CONNECT 7 AUDIO BLANK TIME (C)


    Original
    PDF 27126B* PS-003-1A MA-008-20 AUDIO DELAY CIRCUIT DIAGRAM audio mosfet Toko 7TRS A3845ELW 3845 motorola automotive transistor coil ignition motorola transistor ignition 500 w mosfet audio amplifier diagram PS-0031 car mosfet audio amplifier diagram

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1072 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "PolyfetHtm process features gold metal for greatly extended


    OCR Scan
    PDF F1072

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1016 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended


    OCR Scan
    PDF F1016

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended


    OCR Scan
    PDF F1006 1110Avenida

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1174 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended


    OCR Scan
    PDF F1174 C0D0G17Ã 7241DD1

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2082 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" process features gold metal for greatly extended


    OCR Scan
    PDF L2082 7241Q[ 00GD2Ã 1110AvenidaAcaso,