XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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sc74750
Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes
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OT346
SC-59)
sc74750
MSE-200
PESD5VOL4UW
KMZ52
kmz51
smd transistor BC557
PBLS1504V
2n5551 smd
PMBS3904, PMSS3904
sc7921
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transistor 6c x
Abstract: MRF9060 MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060S MRF9060SR1
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
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MRF9060
MRF9060S
MRF9060Sal
MRF9060
MRF9060S
MRF9060SR1
RDMRF9060NCDMA
transistor 6c x
MRF9060 equivalent
MOTOROLA transistor 413
BC857
LP2951
MRF9060SR1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF284 MRF284S US CDMA The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors Freescale Semiconductor, Inc.
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MRF284
MRF284S
RDMRF284USCDMA
MRF284
MRF284S
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Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET
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MRF9045MR1
RDMRF9045MR1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line MRF9080 MRF9080S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
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MRF9080
MRF9080S
MRF9080
RDMRF9080GSM
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
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MRF5S21130
MRF5S21130R3
MRF5S21130S
MRF5S21130SR3
RDMRF5S21130UMTS
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
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MRF5S21150
MRF5S21150R3
MRF5S21150S
MRF5S21150SR3
RDMRF5S21150UMTS
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs W–CDMA 2.11–2.17 GHz
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MRF5S21130
MRF5S21130R3
MRF5S21130S
MRF5S21130SR3
RDMRF5S21130UMTS
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF21125 Wideband CDMA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs
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MRF21125
MRF21125
RDMRF21125WCDMA
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motorola sps transistor
Abstract: MRF21010
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet
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MRF21010
RDMRF21010NCDMA
motorola sps transistor
MRF21010
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet
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MRF5S21150
MRF5S21150R3
MRF5S21150S
MRF5S21150SR3
RDMRF5S21150UMTS
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110
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MRF21125
RDMRF21125WCDMA
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2sk170bl spice
Abstract: 2SK170BL BF256B PHILIPS SEMICONDUCTOR UHF preamplifier for BF998 small signal transistor philips manual philips BFG235 motorola power fet rf databook BB140-01 small signal transistor MOTOROLA DATABOOK Philips X7R capacitors
Text: RF Manual product & design manual for RF small signal discretes Page: 1 RF Manual product & design manual for RF small signal discretes Volume 0 March 2002 RF Manual product & design manual for RF small signal discretes Content 1. 2. 3. 4. Introduction RF Basics
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BGA2003
BGA2022
BFG425W
2sk170bl spice
2SK170BL
BF256B PHILIPS SEMICONDUCTOR
UHF preamplifier for BF998
small signal transistor philips manual
philips BFG235
motorola power fet rf databook
BB140-01
small signal transistor MOTOROLA DATABOOK
Philips X7R capacitors
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A3845ELW
Abstract: No abstract text available
Text: Data Sheet 27126B* 3845 AM NOISE BLANKER RF IN RF BYPASS VCC 1 NC 2 DET 20 SUPPLY 19 NO CONNECT 18 RF GATE LOW RF GATE HIGH RF BIAS 3 RF AGC 4 17 AUDIO DELAY 5 16 AUDIO BLANK TIME R A high input impedance, high-gain, broadband RF amplifier permits these devices to be directly connected to the RF stage of a
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A3845ELW
A3845SLW
MA-008-20
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us3845
Abstract: PS-0031 RF Amplifier AM receiver car mosfet audio amplifier diagram A3845ELW AUDIO DELAY CIRCUIT DIAGRAM car ignition circuit diagram motorola automotive transistor coil ignition Toko 7TRS audio mosfet
Text: 3845 Data Sheet 27126A 3845 AM NOISE BLANKER AM NOISE BLANKER RF IN 1 VCC 20 SUPPLY RF BYPASS 2 NC 19 NO CONNECT RF BIAS 3 18 RF GATE LOW RF AGC 4 17 RF GATE HIGH AUDIO DELAY 5 16 GROUND DET AUDIO BLANK TIME R 6 15 RF BLANK TIME AUDIO BLANK TIME (C) 7 14
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7126A
PS-003-1
us3845
PS-0031
RF Amplifier AM receiver
car mosfet audio amplifier diagram
A3845ELW
AUDIO DELAY CIRCUIT DIAGRAM
car ignition circuit diagram
motorola automotive transistor coil ignition
Toko 7TRS
audio mosfet
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AUDIO DELAY CIRCUIT DIAGRAM
Abstract: audio mosfet Toko 7TRS A3845ELW 3845 motorola automotive transistor coil ignition motorola transistor ignition 500 w mosfet audio amplifier diagram PS-0031 car mosfet audio amplifier diagram
Text: Data Sheet 27126B* 3845 AM NOISE BLANKER RF IN RF BYPASS VCC 1 NC 2 DET 20 SUPPLY 19 NO CONNECT 18 RF GATE LOW RF GATE HIGH RF BIAS 3 RF AGC 4 17 AUDIO DELAY 5 16 GROUND 15 RF BLANK TIME 14 NO CONNECT AUDIO BLANK TIME R 6 NO CONNECT 7 AUDIO BLANK TIME (C)
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27126B*
PS-003-1A
MA-008-20
AUDIO DELAY CIRCUIT DIAGRAM
audio mosfet
Toko 7TRS
A3845ELW
3845
motorola automotive transistor coil ignition
motorola transistor ignition
500 w mosfet audio amplifier diagram
PS-0031
car mosfet audio amplifier diagram
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1072 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "PolyfetHtm process features gold metal for greatly extended
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F1072
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1016 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended
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F1016
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended
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F1006
1110Avenida
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1174 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended
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F1174
C0D0G17Ã
7241DD1
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices L2082 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" process features gold metal for greatly extended
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L2082
7241Q[
00GD2Ã
1110AvenidaAcaso,
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