MGF 1200
Abstract: mitsubishi mgf MGF7170AC
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION
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MGF7170AC
MGF7170AC
28dBm
78GHz
-46dBc
28dBm
520mA
MGF 1200
mitsubishi mgf
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MGF 1200
Abstract: mitsubishi mgf RF MMIC MARK CODE AS mitsubishi microwave MGF7169C HPA 1200 RF MMIC MARK CODE -03 2SP53
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION PIN CONFIGURATION TOP VIEW The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.
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MGF7169C
MGF7169C
28dBm
91GHz
-46dBc
28dBm
520mA
1000pF
600um
MGF 1200
mitsubishi mgf
RF MMIC MARK CODE AS
mitsubishi microwave
HPA 1200
RF MMIC MARK CODE -03
2SP53
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UMTS800
Abstract: No abstract text available
Text: !" PRELIMINARY DATASHEET WS2111 Power Amplifier Module for UMTS800 824-849MHz PRELIMINARY DATASHEET (DEVICE : WS2111, 4x4 UMTS800 PAM) Issued Date : August 25th , 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-07 !" PRODUCT DESCRIPTION
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WS2111
UMTS800
824-849MHz)
WS2111,
UMTS800
WM-0409-07
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TRANSISTOR SMD MARKING CODE WM
Abstract: TRANSISTOR WM 9 smd electrolytic capacitors marking
Text: !" PRELIMINARY DATASHEET WS2411 Power Amplifier Module for UMTS1900 1850-1910MHz PRELIMINARY DATASHEET (DEVICE : WS2411, 4x4 UMTS1900 PAM) Issued Date : September 8th, 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-06 !" PRODUCT DESCRIPTION
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WS2411
UMTS1900
1850-1910MHz)
WS2411,
UMTS1900
WM-0409-06
TRANSISTOR SMD MARKING CODE WM
TRANSISTOR WM 9
smd electrolytic capacitors marking
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Untitled
Abstract: No abstract text available
Text: !" PRELIMINARY DATASHEET WS2512 Power Amplifier Module for UMTS2100 1920-1980MHz PRELIMINARY DATASHEET (DEVICE : WS2512, 4x4 UMTS2100 PAM) Issued Date : September 8th, 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-05 !" PRODUCT DESCRIPTION
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WS2512
UMTS2100
1920-1980MHz)
WS2512,
UMTS2100
WM-0409-05
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RF MMIC MARK CODE E4
Abstract: icc 312 NBB-300 NBB-310 NBB-312 NBB-312-E NBB-312-T1 NBB-400 NLB-300 NLB-310
Text: NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation
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NBB-312
12GHz
NBB-312
2002/95/EC
DS080807
RF MMIC MARK CODE E4
icc 312
NBB-300
NBB-310
NBB-312-E
NBB-312-T1
NBB-400
NLB-300
NLB-310
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WS1111
Abstract: J-STD-020A J-STD-033
Text: !" PRELIMINARY DATASHEET WS1111 Power Amplifier Module for CDMA/AMPS 824-849MHz PRELIMINARY DATASHEET (DEVICE : WS1111, 4x4 CDMA/AMPS PAM) Issued Date : Dec. 22, 2003 S. W. Paek Senior MTS, Module Group 1 Preliminary Information WR20310-001 !" PRODUCT DESCRIPTION
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WS1111
824-849MHz)
WS1111,
WR20310-001
WS1111
824-849MHz
J-STD-020A
J-STD-033
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era2
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - ERA-2 Amplifier print this page ERA-2 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute
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DC-6000
era2
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transistor wm
Abstract: smd transistor marking 1 da
Text: !" PRELIMINARY DATASHEET WS1213 Power Amplifier Module for J-CDMA 887-925MHz DATASHEET (DEVICE : WS1213, 4x4 JAPAN CDMA PAM) Issued Date : December 9 , 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0410-02 !" PRODUCT DESCRIPTION WS1213
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WS1213
887-925MHz)
WS1213,
WM-0410-02
887-925MHz
transistor wm
smd transistor marking 1 da
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ERA-1 MAR
Abstract: MMIC marking code R
Text: Mini-Circuits - Specification for Amplifier - ERA-1 Amplifier print this page ERA-1 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute
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DC-8000
ERA-1 MAR
MMIC marking code R
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - ERA-5 Amplifier print this page ERA-5 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute
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DC-4000
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MMIC marking code R
Abstract: ERA-3 RF MMIC MARK CODE -03 vv105 mini
Text: Mini-Circuits - Specification for Amplifier - ERA-3 Amplifier print this page ERA-3 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR 3 3 2,4 75 35 330 3.20 154 Notes: Pin Connections Port RF in RF Out DC Case GND Not Used 1 DC Power
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DC-3000
MMIC marking code R
ERA-3
RF MMIC MARK CODE -03
vv105 mini
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MMIC MAV 11
Abstract: VV105
Text: Mini-Circuits - Specification for Amplifier - ERA-4 Amplifier print this page ERA-4 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute
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DC-4000
MMIC MAV 11
VV105
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HA22040
Abstract: hitachi a january b february Hitachi DSA0015
Text: HA22040 GaAs MMIC Down Converter for Micro Wave Application ADE-207-318 Z 1st. Edition December 1999 Features • • • • • Suitable for down converter of Micro Wave Application(1.5 GHz) Low voltage and low current operation (2.7V, 6mA typ.) High conversion gain (10.5 dB typ. @1489MHz)
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HA22040
ADE-207-318
1489MHz)
HA22040
hitachi a january b february
Hitachi DSA0015
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RxBN
Abstract: CX77133
Text: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. CX77133 Power Amplifier Module for CDMA PCS 1850–1910 MHz The CX77133 Power Amplifier Module (PAM) is a fully matched, 6-pin surface mount
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CX77133
CX77133
RxBN
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Untitled
Abstract: No abstract text available
Text: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. CX77133 ry Power Amplifier 3–4 Volts for CDMA PCS 1850–1910 MHz The CX77133 Power Amplifier is a fully matched 6-pin surface mount module
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CX77133
CX77133
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MAR-7 MMIC
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - MAR-7 Amplifier print this page MAR-7 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device
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DC-2000
MAR-7 MMIC
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JEDEC J-STD-033 TAPE AND REEL
Abstract: IPC-7721 IPC 7721
Text: !" PRELIMINARY DATASHEET WS1113 Power Amplifier Module for CDMA/AMPS 824-849MHz DATASHEET (DEVICE : WS1113, 4x4 PAM) Issued Date : January 29, 2005 1 Preliminary Information WM0501-13 !" PRODUCT DESCRIPTION WS1113 Power Amplifier Module for CDMA/AMPS(824-849MHz)
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WS1113
824-849MHz)
WS1113,
WM0501-13
824-849MHz
JEDEC J-STD-033 TAPE AND REEL
IPC-7721
IPC 7721
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MAV-11SM
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - MAV-11SM Amplifier print this page MAV-11SM Frequency GAIN, dB MHz fL - fU Maximum Power, dBm Output 1 dB Comp. Min. Input (no damage) Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc
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MAV-11SM
MAV-11SM
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - MAR-4 Amplifier print this page MAR-4 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device
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DC-1000
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MAR-2 MMIC
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - MAR-2 Amplifier print this page MAR-2 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device
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DC-2000
MAR-2 MMIC
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MMIC MAR-6
Abstract: MMIC Amplifier mar6 MAR6
Text: Mini-Circuits - Specification for Amplifier - MAR-6 Amplifier print this page MAR-6 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device
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DC-2000
MMIC MAR-6
MMIC Amplifier mar6
MAR6
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1715G
Abstract: 17-15G
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION The M G F7170A C is a monolithic microwave integrated circuit for use in C DM A base handheld phone.
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MGF7170AC
MGF7170A
28dBm
-46dB
10sec
1715G
17-15G
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER S pecifications are su b je ct to ch a n g e w ith o u t notice. PIN CONFIGURATION TOP VIEW DESCRIPTION T he M G F7170A C is a m onolithic m icrow ave integrated
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MGF7170AC
F7170A
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