138l6
Abstract: CMY82 amplifier SMD MARKING CODE 211
Text: GaAs MMIC CMY 82 Preliminary Data Sheet • GaAs receiver front-end for cellular CDMA applications • Adjustable gain control RF amplifier with 20 dB dynamic range • Low LO-power demand of typ. – 10 dBm with 2 LO buffer stages • Optional 1 or 2 LO-buffer stages
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P-VQFN-24-3
GVQ09253
138l6
CMY82
amplifier SMD MARKING CODE 211
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amplifier A55 marking
Abstract: SGA-5586 Sirenza Microdevices, Inc
Text: SGA-5586 Product Description DC-4000 MHz, Cascadable SiGe HBT MMIC Amplifier Sirenza Microdevices SGA-5586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown
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SGA-5586
DC-4000
SGA-5586
EDS-101267
amplifier A55 marking
Sirenza Microdevices, Inc
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a55z
Abstract: No abstract text available
Text: SGA-5589 Product Description SGA-5589Z Product Features The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
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SGA-5589
SGA-5589
SGA-5589Z
EDS-101443
DC-4000
a55z
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SGA-5589
Abstract: amplifier A55 marking
Text: SGA-5589 Product Description DC-4000 MHz, Cascadable SiGe HBT MMIC Amplifier Sirenza Microdevices SGA-5589 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage
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SGA-5589
DC-4000
SGA-5589
SGA5589
EDS-101443
amplifier A55 marking
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amplifier 55z marking
Abstract: dc voltage amplifier circuit transistor 5586 AN-075 SGA-5586 SGA-5586Z
Text: SGA-5586 RoHS Compliant & Green Package Product Description SGA-5586Z The SGA-5586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current
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SGA-5586
SGA-5586Z
SGA-5586
DC-4000
AN-075
EDS-101267
amplifier 55z marking
dc voltage amplifier circuit
transistor 5586
AN-075
SGA-5586Z
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A55Z
Abstract: AN-075 Marking A55Z amplifier A55 marking SGA-5589 sga-5589z
Text: SGA-5589 Product Description SGA-5589Z Product Features The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
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SGA-5589
SGA-5589Z
DC-4000
SGA-5589
AN-075
EDS-101443
A55Z
AN-075
Marking A55Z
amplifier A55 marking
sga-5589z
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Untitled
Abstract: No abstract text available
Text: SGA-5589 Z SGA-5589(Z) DC to 4000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features The SGA-5589 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and
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SGA-5589
4000MHz,
OT-89
EDS-101443
SGA5589
SGA5589Z
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transistor 5586
Abstract: SGA-5586 SGA-5586Z 5586 c 5586
Text: SGA-5586 Z SGA-5586(Z) DC to 4000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description Features The SGA-5586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and
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SGA-5586
4000MHz,
OT-86
EDS-101267
transistor 5586
SGA-5586Z
5586
c 5586
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code A55 amplifier
Abstract: SGA-5589 A55Z A55Z amplifier schematic rf SGA5589Z marking 66 mmic sot-89
Text: SGA-5589 Z SGA-5589(Z) DC to 4000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA-5589 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and
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SGA-5589
4000MHz,
OT-89
EDS-101443
SGA5589
SGA5589Z
code A55 amplifier
A55Z
A55Z amplifier schematic rf
marking 66 mmic sot-89
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SGA-5589
Abstract: A55Z A55Z amplifier schematic A55Z amplifier schematic rf tl 271 Marking A55Z
Text: SGA-5589 Z SGA-5589(Z) DC to 4000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA-5589 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and
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SGA-5589
4000MHz,
OT-89
DS100202
SGA5589
SGA5589Z
A55Z
A55Z amplifier schematic
A55Z amplifier schematic rf
tl 271
Marking A55Z
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SNA-476-TR2
Abstract: 110C 155C SNA-400 SNA-476 SNA-476-TR1 SNA-476-TR3 sna476tr1
Text: Product Description SNA-476 Stanford Microdevices’ SNA-476 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V. DC-8 GHz, Cascadable
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SNA-476
SNA-476
SNA-400)
SNA-476-TR2
110C
155C
SNA-400
SNA-476-TR1
SNA-476-TR3
sna476tr1
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Funkamateur
Abstract: PMBFJ620 spice model SiC PIN diode Pspice model Densitron microwave philips 3F1 Transistor SIEMENS MICROWAVE RADIO JP2043 jfet cascode stage in AM LNA ECC85 Kathrein K73232
Text: セミコンダクタ 付録RFマニュアル第6版 2005年5月 リリース日付：2005年5月 ドキュメント注文番号： 9397 750 15125 目 次 1. RFアプリケーション-基礎編 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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BFG410W
BFU540
21dBm
BGU2003
15dBm
BFG325W
Funkamateur
PMBFJ620 spice model
SiC PIN diode Pspice model
Densitron microwave
philips 3F1 Transistor
SIEMENS MICROWAVE RADIO
JP2043
jfet cascode stage in AM LNA
ECC85
Kathrein K73232
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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ujt 2646
Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!
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D-81541
14-077S
Q62702-D1353
Q62702-G172
Q62702-G173
ujt 2646
TRANSISTOR J 5804
label infineon barcode
msc 1697
MSC 1697 IC pin diagram
Rohde und Schwarz Active Antenna HE 011
cd 6283 audio
smd transistor v75
log tx2 0909
IC data book free download
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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IR TRansmitter and receiver wikipedia
Abstract: SIEMENS 565-2 white noise Generator 1GHz ECC85 samsung colour tv kit circuit diagram Kathrein Antennas elektra c radio diagram philips rf manual Funkamateur varactor diode model in ADS
Text: Semiconductors Appendix RF Manual 6th edition May 2005 date of release: May 2005 document order number: 9397 750 15125 Contents 1. RF Application-Basics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
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Untitled
Abstract: No abstract text available
Text: E C-NARCONI MTLS LTD 25 D • 37bö5Dl ÜDGGOn ö ■GM L PLESSEY Three Five Product Information GaAs MMIC Switches Plessey now offer an extensive range of RF switch chip devices based on GaAs M ESFET technology. These switch products span the frequency range up to 12GHz and
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12GHz
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Untitled
Abstract: No abstract text available
Text: In fineon fach oologia* GaAs MMIC CMY 82 Preliminary Data Sheet • GaAs receiver front-end for cellular CDMA applications • Adjustable gain control RF amplifier with 20 dB dynamic range • Low LO-power demand of typ. - 10 dBm with 2 LO buffer stages • Optional 1 or 2 LO-buffer stages
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P-VQFN-24-3
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transistor t06
Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX
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MAAM02350
Abstract: No abstract text available
Text: an A M P company Wide Band GaAs MMIC Amplifier 0.2 - 3.0 GHz MAAM02350 V 2.00 Features • 19 dB Typical Gain1 • +14 dBm Typical Output Power • 3.7 dB Typical Noise Figure1 Electrical Specifications @ = +25°C 0 .2 -3 .0 GHz Frequency Range 17.0 dB Min
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MAAM02350
100mA
-100pF
500pF
MAAM02350
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MMIC 558
Abstract: No abstract text available
Text: m an A M P com pany Wide Band GaAs MMIC Amplifier 0.2 - 3.0 GHz MAAM02350 V 2.00 Features • 19 cl I! Typ ical G a in 1 • + l t d B m Typ ical O u tp u t Pow er • 3 .7 d B Typ ical N oise Fig ure1 Electrical Specifications @ = +25°C 0 .2 -3 .0 GHz Frequency Range
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MAAM02350
100mA
100pF
500pF
MMIC 558
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Untitled
Abstract: No abstract text available
Text: A fa : Wide Band GaAs MMIC Amplifier 0.2—3.0 GHz MAAM02350 Features • 19 dB Typical G ain1 • +14 dBm Typical Output Power • 3.7 dB Typical Noise Figure1 Electrical Specifications @ Ta = 25°C Frequency Range 0.2-3.0 GHz Gain’ 19.0dBTyp 17.0 dB Min
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MAAM02350
100mA
125ms
500pF
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mmic a08
Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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