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    RF GHZ TRANSISTOR MARKING R3 Search Results

    RF GHZ TRANSISTOR MARKING R3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF GHZ TRANSISTOR MARKING R3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    all transistor datasheet

    Abstract: TQP0102-PCB
    Text: TQP0102 5 W, DC to 4 GHz, GaN Power Transistor Applications • • • • Small Cell Base Station Microcell Base Station Driver Active Antenna General Purpose Applications 16 Pin 3x3mm QFN Product Features • • • • • Functional Block Diagram Operating Frequency Range: DC to 4 GHz


    Original     		PDF TQP0102 TQP0102 all transistor datasheet TQP0102-PCB

    Untitled

    Abstract: No abstract text available
    Text: TQP0103 15 W, DC to 4 GHz, GaN Power Transistor Applications • • • • • • W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features • • • •


    Original     		PDF TQP0103 TQP0103

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original     		PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor

    BFP740

    Abstract: BFP740 application note TR103 bfp740 board
    Text: Technical Report, 2008-Dec-03 Technical Report LNA using BFP740 for 2.3 – 2.7 GHz WiMax Application Technical Report TR103 Device: BFP740 Application: WiMax LNA for 2.3 – 2.7 GHz Revision: Rev. 1.0


    Original     		PDF 2008-Dec-03 BFP740 TR103 BFP740 BFP740 application note TR103 bfp740 board

    2SC2351

    Abstract: RF TRANSISTOR 10GHZ low noise 10GHz mixer 10GHz RF mixer marking r2 RF TRANSISTOR 10GHZ RF POWER TRANSISTOR NPN UHF transistor GHz rf ghz transistor marking r3 RF TRANSISTOR
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION •Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a


    Original     		PDF 2SC2351 S21e2 2SC2351 RF TRANSISTOR 10GHZ low noise 10GHz mixer 10GHz RF mixer marking r2 RF TRANSISTOR 10GHZ RF POWER TRANSISTOR NPN UHF transistor GHz rf ghz transistor marking r3 RF TRANSISTOR

    germanium transistors NPN

    Abstract: BFR705L3RH BFR720L3RH rf ghz transistor marking r3 R019
    Text: BFR720L3RH NPN Silicon Germanium RF Transistor Target data sheet • High gain ultra low noise RF transistor for low current operation 3 • Provides outstanding performance for 1 2 a wide range of wireless applications up to 10 GHz and more • Optimum gain and noise figure


    Original     		PDF BFR720L3RH germanium transistors NPN BFR705L3RH BFR720L3RH rf ghz transistor marking r3 R019

    marking R33

    Abstract: 2SC4227 2SC4227-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


    Original     		PDF 2SC4227 2SC4227 S21e2 2SC4227-T1 marking R33 2SC4227-T1

    smd transistor marking z3

    Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
    Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090AR3 smd transistor marking z3 smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2

    Philips Capacitor

    Abstract: transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency


    Original     		PDF BFG10W/X OT343 Philips Capacitor transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent

    bfp740

    Abstract: what is technical report 5Ghz lna transistor datasheet TR104 BFP740 application note infineon marking L2 RF Bipolar Transistor LNA CIRCUIT
    Text: Technical Report, 2008-Nov-21 Technical Report BFP740 LNA for 3.5GHz WiMax Application Technical Report TR104 Device: BFP740 Application: LNA for 3.5 GHz WiMax Application Revision: Rev. 1.0 Date:


    Original     		PDF 2008-Nov-21 BFP740 TR104 BFP740 what is technical report 5Ghz lna transistor datasheet TR104 BFP740 application note infineon marking L2 RF Bipolar Transistor LNA CIRCUIT

    Philips Capacitor

    Abstract: smd code HF transistor Philips Capacitor datasheet CRS15 smd transistor marking C14 transistor SMD MARKING CODE HF transistor smd marking code c3 Transistor SMD marking code NV c5 marking TRANSISTOR SMD nf c1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V


    Original     		PDF M3D381 BLF1822-10 BLF1822-10 OT467C 15-Aug-02) Philips Capacitor smd code HF transistor Philips Capacitor datasheet CRS15 smd transistor marking C14 transistor SMD MARKING CODE HF transistor smd marking code c3 Transistor SMD marking code NV c5 marking TRANSISTOR SMD nf c1

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor

    MGM219

    Abstract: 9335 895 BC817 BFG21W DCS1800 MGM224
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN  High efficiency


    Original     		PDF M3D124 BFG21W DCS1800, R77/03/pp11 MGM219 9335 895 BC817 BFG21W DCS1800 MGM224

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN  High efficiency


    Original     		PDF M3D124 BFG21W DCS1800, R77/03/pp11

    BFG480W

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION


    Original     		PDF M3D124 BFG480W MSB842 R77/03/pp16 BFG480W

    C3330 transistor

    Abstract: NPN transistor mhz s-parameter AN-S011 amplifier TRANSISTOR 12 GHZ AN-S012 BF 184 transistor 47E-18 IN 3319 B bjt4npn Marking KR SOT343
    Text: Agilent MSA-2743 Cascadable Silicon Bipolar Gain Block MMIC Amplifier Data Sheet Applications • Cellular/PCS/WLL basestations • Wireless data/ WLAN • Fiber-optic systems • ISM Description Agilent Technologies’ MSA-2743 is a low current silicon gain block


    Original     		PDF MSA-2743 MSA-2743 SC-70 OT-343) OT-343 SC-70) 5980-2400E 5989-4221EN C3330 transistor NPN transistor mhz s-parameter AN-S011 amplifier TRANSISTOR 12 GHZ AN-S012 BF 184 transistor 47E-18 IN 3319 B bjt4npn Marking KR SOT343

    transistor c5

    Abstract: "MARKING CODE P1" 9335 895 philips ferroxcube BC817 BFG21W DCS1800
    Text: DISCRETE SEMICONDUCTORS M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06 Philips Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain


    Original     		PDF M3D124 BFG21W DCS1800, SCA60 125104/00/03/pp12 transistor c5 "MARKING CODE P1" 9335 895 philips ferroxcube BC817 BFG21W DCS1800

    C3330 transistor

    Abstract: No abstract text available
    Text: MSA-2743 Cascadable Silicon Bipolar Gain Block MMIC Amplifier Data Sheet Description Features Avago Technologies’ MSA-2743 is a low current silicon gain block MMIC amplifier housed in a 4-lead SC-70 SOT-343 surface mount plastic package. • Small signal gain amplifier


    Original     		PDF MSA-2743 MSA-2743 SC-70 OT-343) OT-343/4-lead 5989-4221EN AV02-3678EN C3330 transistor

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


    Original     		PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    transistor 2222

    Abstract: "MARKING CODE S4" marking 82 sot343 BC548 bc548 PLASTIC
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X


    Original     		PDF BFG11W/X OT343 SCA49 127101/1200/02/pp12 transistor 2222 "MARKING CODE S4" marking 82 sot343 BC548 bc548 PLASTIC

    pin diagram for IC 7476

    Abstract: marking 724 diode sot-363 datasheet and pin diagram of IC 7476 7476 marking 259 sot363 7476 data sheet 7476 datasheet FF200 ic 7294 R5 SOT363
    Text: BGA 425 Si-MMIC-Amplifier in SIEGET 25-Technologie 4 5  Multifunctional casc. 50  block LNA / MIX 6  Unconditionally stable  Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (Appl.2) 3 2 IP 3out = +7 dBm at 1.8 GHz (V D=3V,ID=9.5mA)


    Original     		PDF 25-Technologie VPS05604 OT-363 Oct-12-1999 pin diagram for IC 7476 marking 724 diode sot-363 datasheet and pin diagram of IC 7476 7476 marking 259 sot363 7476 data sheet 7476 datasheet FF200 ic 7294 R5 SOT363

    TRANSISTOR CATALOGUE

    Abstract: "MARKING CODE S4" BC548 MGD415
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X


    Original     		PDF BFG11W/X OT343 SCA49 127101/1200/02/pp12 TRANSISTOR CATALOGUE "MARKING CODE S4" BC548 MGD415

    Untitled

    Abstract: No abstract text available
    Text: TQP0104 DC to 4 GHz, 30 W, Discrete PA Applications • • • • • • W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features • • • •


    Original     		PDF TQP0104 TQP0104

    INFINEON marking BGA

    Abstract: BGA427 TRANSISTOR BI 185 BGA420
    Text: BGA427 Si-MMIC-Amplifier in SIEGET  25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S 21| 2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)


    Original     		PDF BGA427 25-Technologie EHA07378 OT343 INFINEON marking BGA BGA427 TRANSISTOR BI 185 BGA420