RF BIPOLAR TRANSISTOR Search Results

RF BIPOLAR TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

RF BIPOLAR TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts	Original	MRF20060R/D MRF20060R MRF20060RS MRF20060R	PDF
BD136 Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts	Original	MRF20060R/D MRF20060R MRF20060RS MRF20060R) MRF20060R BD136 MJD47 MRF20060RS MURS160T3 rohm mtbf	PDF
MRF660 Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040	Original	2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet	PDF
bd136 equivalent Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060/D MRF20060 MRF20060S bd136 equivalent RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF	PDF
BD136 Abstract: MJD47 MRF20030R Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	MRF20030R/D MRF20030R BD136 MJD47 MRF20030R	PDF
Untitled Abstract: No abstract text available Text: ADVANCE INFORMATION All information in this data sheet is preliminary J ¥ U iy L \J V i and subject to change. 11/96 3V, 1W RF Power Transistors for 900MHz Applications The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a bias	OCR Scan	900MHz 900MHz MAX2602) MAX2601/MAX2602 MAX2602 MAX2601/MAX2602 MAX2601ESA MAX2602ESA MAX2602E/D 915MHz	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier	Original	MRF20030R/D MRF20030R	PDF
UPB2060 Abstract: No abstract text available Text: UPB2060 60W PEP, 1.8-2.0 GHz, 26V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB2060 is a high-power COMMON EMITTER bipolar transistor capable of providing 60 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed	Original	UPB2060 UPB2060 400mA 491w6	PDF
MRF485 Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460 Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de signed for operation in RF Power Amplifiers. These transistors	OCR Scan	MRF476 T0-220AB MRF453 MRF455/A MRF454 MRF475 MRF449 MRF450/A MRF497 O-220AB MRF485 mrf477 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460	PDF
MRF485 Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475 Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de signed for operation in RF Power Amplifiers. These transistors	OCR Scan	Distorti1-11 MRF421 MRF475 O-22GAB MRF412 IMRF410 MRF485 MRF401 45A-09 MRF426 MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464	PDF
UPB1835 Abstract: TM35W Text: UPB1835 35W PEP, 1.8-2.0 GHz, 25V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB1835 is a high-power COMMON EMITTER bipolar transistor capable of providing 35 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed for	Original	UPB1835 UPB1835 TM35W	PDF
TVU012 Abstract: 420 NPN Silicon RF Transistor ASI10646 Text: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.	Original	TVU012 TVU012 420 NPN Silicon RF Transistor ASI10646	PDF
TVU020 Abstract: RF Bipolar Transistor 2108-G ASI10648 Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband	Original	TVU020 TVU020 RF Bipolar Transistor 2108-G ASI10648	PDF
ccb transistor Abstract: HP4279A Bipolar Junction Transistor "parasitic capacitance" coax C22E AN024 Text: Application Note No. 024 Discrete & RF Semiconductors Parasitic Capacitance in Bipolar Junction Transistors The parasitic capacitance present in any bipolar junction transistor can be best modeled as three capacitors connected between each of the three ports of the transistor.	Original		PDF

Untitled Abstract: No abstract text available Text: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package	Original	MMBR911MLT1 MMBR911MLT1	PDF
MMBR5179LT1 Abstract: No abstract text available Text: MMBR5179LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package	Original	MMBR5179LT1 MMBR5179LT1 200MHz	PDF
GA900 Abstract: NPN RF Amplifier pnp 8 transistor array RF Bipolar Transistor DIP array resistors Text: INFORMATION NOTE GENNUM C O R P O R A T I O N 510-22 RF BIPOLAR GA900 SEMICUSTOM ARRAY Gennum offers a 2 GHz bipolar uncommitted array that is designed for RF circuit applications required in low power mobile VHF / UHF communications. Using a linear process, the array is suitable for control circuitry,	OCR Scan	GA900 100jiA NPN RF Amplifier pnp 8 transistor array RF Bipolar Transistor DIP array resistors	PDF
XPOSYS Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.	Original	BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP 726-BFP640ESDE6327 640ESD E6327 XPOSYS gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb	PDF
MMBR901 Abstract: MRF9011LT1 MRF9011MLT1 MMBR901MLT1 Text: MMBR901MLT1/MRF9011MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.8dB@1GHz ! Low cost SOT23/SOT143	Original	MMBR901MLT1/MRF9011MLT1 MMBR901LT1/MRF9011LT1 OT23/SOT143 MMBR901 MRF9011LT1 MRF9011MLT1 MMBR901MLT1	PDF
MRF9411MLT1 Abstract: No abstract text available Text: MMBR941MLT1/MRF9411MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR941MLT1/MRF9411MLT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.3dB@1GHz ! Low cost SOT23/SOT143	Original	MMBR941MLT1/MRF9411MLT1 MMBR941MLT1/MRF9411MLT1 OT23/SOT143 MMBR941LMT1/MRF9411MLT1 MRF9411MLT1	PDF
Germanium Transistor Abstract: BFP842 Text: BFP842ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2013-04-11 RF & Protection Devices Edition 2013-04-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.	Original	BFP842ESD OT343 OT343-PO OT343-FP BFP842ESD: OT323-TP Germanium Transistor BFP842	PDF
BFP640FESD Abstract: MIPI spec C166 JESD22-A114 NF50 X-GOLD RF Bipolar Transistor XPOSYS Germanium Transistor Text: BFP640FESD Robust SiGe:C Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2010-04-08 RF & Protection Devices Edition 2010-04-08 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer	Original	BFP640FESD BFP640FESD: BFP640FESD MIPI spec C166 JESD22-A114 NF50 X-GOLD RF Bipolar Transistor XPOSYS Germanium Transistor	PDF
gummel poon model parameter HBT Abstract: 726-BFP640FESDH6327 Germanium Transistor Text: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.	Original	BFP640FESD BFP640FESD: 726-BFP640FESDH6327 640FESD H6327 gummel poon model parameter HBT Germanium Transistor	PDF
spice gummel Abstract: bfp840 Germanium Transistor LNA ku-band Text: BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.	Original	BFP840ESD OT343 OT343-PO OT343-FP BFP840ESD: OT323-TP spice gummel bfp840 Germanium Transistor LNA ku-band	PDF

RF BIPOLAR TRANSISTOR Search Results

RF BIPOLAR TRANSISTOR Result Highlights (5)

RF BIPOLAR TRANSISTOR Datasheets Context Search

Untitled

BD136

MRF660

bd136 equivalent

BD136

Untitled

Untitled

UPB2060

MRF485

MRF485

UPB1835

TVU012

TVU020

ccb transistor

Untitled

MMBR5179LT1

GA900

XPOSYS

MMBR901

MRF9411MLT1

Germanium Transistor

BFP640FESD

gummel poon model parameter HBT

spice gummel