RF AMPLIFIER MARKING A01 Search Results

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190

RF AMPLIFIER marking A01

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190

Contextual Info: LT1223 100MHz Current Feedback Amplifier U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ 100MHz Bandwidth at AV = 1 1000V/µs Slew Rate Wide Supply Range: ±5V to ±15V 1mV Input Offset Voltage 1µA Input Bias Current 5MΩ Input Resistance 75ns Settling Time to 0.1%

lt6211 transistor

Abstract: LT6210 LT1223 LT1223C LT1223CJ8 LT1223CN8 LT1223CS8 LT1223M gs 069 0605 RF POWER TRANSISTOR 100MHz 5db
Contextual Info: LT1223 100MHz Current Feedback Amplifier U FEATURES DESCRIPTIO • The LT 1223 is a 100MHz current feedback amplifier with very good DC characteristics. The LT1223’s high slew rate, 1000V/µs, wide supply range, ±15V, and large output drive, ±50mA, make it ideal for driving analog signals over

A01 monolithic amplifier

Abstract: MAR-1 RF amplifier MAR-1 MMIC MMIC MAR-1 RF AMPLIFIER marking A01 mmic mar 3 TB-432-1
Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High gain, 17.8 dB typ. at 0.1 GHz • Low noise figure, 3.5 dB typ. • Exact foot print substitute for MSA-0185 • Low current, 17mA • Cascadable, unconditionally stable

A01 monolithic amplifier

Abstract: RF AMPLIFIER marking A01 AF190
Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190

A01 monolithic amplifier

Abstract: RF AMPLIFIER marking A01 414 monolithic amplifier AF190 ram1 A01 MMIC
Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 5.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-1+ CASE STYLE: AF190

MAR-1 MMIC

Abstract: MMIC MAR-1 monolithic amplifier MAR MSA-0185 VV105 WW107 A01 monolithic amplifier
Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High gain, 17.8 dB typ. at 0.1 GHz • Low noise figure, 3.5 dB typ. • Exact foot print substitute for MSA-0185 • Low current, 17mA • Cascadable, unconditionally stable

mar8

Abstract: mini-circuits MAR-8 VV105 monolithic amplifier A04 MAV-11 A08 marking MAR-8 MCL MAR-8 A07 RF Amplifier marking A06 amplifier
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω Flat-Pack BROADBAND DC to 2 GHz MAV MAR up to +17.5 dBm output MODEL NO. o o o o J FREQ. MHz GAIN, dB Typical at MHz note 1 fL fU 100 500 1000 2000 MIN. DC THERMAL CAPD Case MAXIMUM DYNAMIC VSWR ABSOLUTE DATA Style OPERATING RESISPOWER, dBm RANGE

MAV-4

Abstract: MAV2 MAV4 MAV1 MAR-6
Contextual Info: M onolithic A mplifiers boo B roadband DC to 2 GHz up to +12.5 dBm output ow m GAIN, dB Typical at MHz . MHz note 1 Typ. Output ir^ut MODEL NO. □ J J □ MAXIMUM r y w i i R , v n M ft K % too 500 1000 2000 — 13.0 8.5 8.0 7.0 _1 MAR-6 J MAR-7 J MAR-8

s791

Abstract: transistor B 722
Contextual Info: TELEFUNKEN ELECTRONIC T lt U M IM iN l electronic filC D • ÛTBÜG^b 0005437 *3 X -J/-/ r S 79! T Creativo Technotogìes Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz range specially for wide band antenna amplifier Feature*: • High power gain

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

A9M15

Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

transistors 1UW

Abstract: 2N4393 TL084 DATA SHEET LF412A LT1057 LT1058 OP-215 tl072 photodiode tl074 tl084 replace TL084
Contextual Info: LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1057 is a matched JFET input dual op amp in the industry standard 8-pin configuration, featuring a combination of outstanding high speed and precision

RF AMPLIFIER marking A01

Abstract: marking 53 Sot-343 BFP620
Contextual Info: BFP620 NPN Silicon-Germanium RF Transistor Preliminary Data • • For high gain low noise amplifier Noise Figure F = 0.65 dB at 1.8 GHz • • • • Gms=21dB at 1.8 GHz Gold metalization for high reliability 70GHz fT - Line 10dBm Input IP3 capability @ 1.95 GHz, VCE=2V, ICE=6mA

sot23-5 A01B

Abstract: Marking A01B voltage regulator MARKING A01B LMC7131 marking A01B SOT23
Contextual Info: LMC7111 Tiny CMOS Operational Amplifier with Rail-to-Rail Input and Output General Description The LMC7111 is a micropower CMOS operational amplifier available in the space saving SOT 23-5 package. This makes the LMC7111 ideal for space and weight critical designs. The wide common-mode input range makes it easy to