smd zener diode code 20w
Abstract: rf power amplifier 100w zener 20w smd diode 1w capacitor 100nf 63v PD57060s rf amplifier 100w smd code ND ATC100B DB-900-100W XPD57060S
Text: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over
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DB-900-100W
PD57060S
IS-95
DB-900-100W
IS-54/-136
IS-95
smd zener diode code 20w
rf power amplifier 100w
zener 20w smd diode 1w
capacitor 100nf 63v
PD57060s
rf amplifier 100w
smd code ND
ATC100B
XPD57060S
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F1021
Abstract: 100WATTS
Text: polyfet rf devices F1021 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1021
F1021
100WATTS
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F1072
Abstract: 100WATTS
Text: polyfet rf devices F1072 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1072
F1072
100WATTS
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1021 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1021
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F1015
Abstract: 100WATTS
Text: polyfet rf devices F1015 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1015
F1015
100WATTS
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F1066
Abstract: 100WATTS
Text: polyfet rf devices F1066 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1066
F1066
100WATTS
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1015 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1015
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1072 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1072
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100W POWER AMPLIFIER
Abstract: No abstract text available
Text: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency :1MHz～1000MHz ■ Output Power :100W min. @1dB Comp. R&K-A001M102-5050R APPLICATION EMC(Electoromagnetic Compatibility) Accelerator Application Telecommunication Test and Measurement Application
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1000MHz
K-A001M102-5050R
A001M102-5050R
1000MHz
100MHz
200MHz
500MHz
100W POWER AMPLIFIER
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12v class d amplifier 100W
Abstract: No abstract text available
Text: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF463AP1
ARF463BP1
100MHz
ARF463BP1
12v class d amplifier 100W
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ARF463A
Abstract: ARF463B VK200-4B rf power amplifier 100w VK200 ferrite choke
Text: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF463A
ARF463B
O-247
100MHz
ARF463A
ARF463B
VK200-4B
rf power amplifier 100w
VK200 ferrite choke
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12v class d amplifier 100W
Abstract: No abstract text available
Text: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF463A
ARF463B
O-247
100MHz
ARF463A
ARF463B
12v class d amplifier 100W
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58nH
Abstract: 12v class d amplifier 100W
Text: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF463AP1
ARF463BP1
100MHz
ARF463BP1
58nH
12v class d amplifier 100W
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ARF463A
Abstract: ARF463B VK200-4B
Text: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF463A
ARF463B
O-247
100MHz
ARF463A
ARF463B
VK200-4B
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Untitled
Abstract: No abstract text available
Text: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF463A
ARF463B
O-247
100MHz
ARF463A
ARF463B
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ARF463A/B
Abstract: No abstract text available
Text: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF463A
ARF463B
O-247
100MHz
ARF463A
ARF463B
ARF463A/B
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12v class d amplifier 100W
Abstract: No abstract text available
Text: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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O-247
ARF463AP1
ARF463BP1
100MHz
ARF463BP1
12v class d amplifier 100W
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Untitled
Abstract: No abstract text available
Text: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency:9kHz～250MHz ■ Output Power :100W min. @1dB Comp. R&K-A009K251-5050R SPECIFICATIONS ＠＋25℃ OUTLINE DRAWING Frequency Range Small Signal Gain Gain Flatness Output Power
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250MHz
K-A009K251-5050R
A009K251-5050R
250MHzã
10MHz
100MHz
150MHz
200MHz
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices LR401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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LR401
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SM703
Abstract: VDMOS TRANSISTOR S1A
Text: polyfet rf devices SM703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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SM703
SM703
VDMOS
TRANSISTOR S1A
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices LX703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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ST744
Abstract: VDMOS
Text: polyfet rf devices ST744 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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ST744
ST744
VDMOS
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wiring diagram audio amplifier ic 6283
Abstract: cd 6283 ic wiring diagram RCR42G 520-587900O-00C311 CM06FD Cherokee International Power sp215 rockwell collins 634 EIMAC Application Bulletin rcr20g TB101
Text: Collins instruction book Collins Government Telecommunications Group 30S-1 RF Linear Amplifier 520-587900O-00C311 12th Edition, 15 March 1976 * Rockwell International Collins instruction book 30S-1 RF Linear Amplifier Collins Government Telecommunications Group
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30S-1
520-587900O-00C311
30S-1
TB211
wiring diagram audio amplifier ic 6283
cd 6283 ic wiring diagram
RCR42G
CM06FD
Cherokee International Power sp215
rockwell collins 634
EIMAC Application Bulletin
rcr20g
TB101
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RFA8090B
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Broadband RF A rray for TV Transm itter The RFA8090B is a solid state class AB amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip technology and reliable Motorola push-pull transistors.
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RFA8090B
2x300
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