RETROGRADE WELL 0.35 Search Results

magnachip 0.18um

Abstract: nmos transistor 0.35 um TI 046 magnachip 0.18um 1p6m
Contextual Info: 0.18um 1P6M Low power 1.8V /3.3V updated in 2005.03.16 Features ƒ Vdd Core/IO 1.8V / 3.3V ƒ Substrate P-sub ƒ Well Retrograde Twin Well (Triple Well option) ƒ Isolation STI (Shallow Trench Isolation) ƒ Gate Oxide 37Å/70Å NO Oxide (electrical) ƒ

2P4M P 82

Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
Contextual Info: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um

TRANSISTOR 545

Contextual Info: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel

0.35Um 1P4M

Abstract: nmos transistor 0.35 um
Contextual Info: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS

cmos transistor 0.35 um

Abstract: UM207 ua 471 TRANSISTOR 641 nmos transistor 0.35 um 815 transistor 0.35Um 1P4M
Contextual Info: 0.35um 1P4M Embedded Flat ROM 3.3V, 5.0V updated in 2005.04.05 Features ƒ Vdd Core/IO 3.3V/3.3V, 5V/5V ƒ Substrate P-type (100), Non-EPI ƒ Well Retrograde Twin Well (NW, PW) ƒ Isolation Conventional LOCOS ƒ Transistor Single-Gate CMOS Channel Surface channel NMOS, Buried channel PMOS

nmos transistor 0.35 um

Abstract: transistor 548
Contextual Info: 0.30um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 3.3V ƒ Starting material P(100), Non-EPI ƒ Well Retrograde twin well structure ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide Thermally grown oxide of 73A thickness in electrical

XH035

Abstract: CMOS Process Family XH035 cmos process family passive inductor process 0.6 um cmos process 0.35 um CMOS gate area
Contextual Info: 0.35 µm CMOS Process Family XH035 RF CMOS Modular mixed signal 0.35 µm CMOS process with passive Main Process Flow components available for mixed-signal/RF analog applications p-/p+ epi-substrate Independent retrograde n- and p-well Spiral top thick metal inductor

256K DPRAM

Abstract: CB45000 ST20 programmable schmitt trigger tristate nand gate
Contextual Info: CB45000 SERIES  HCMOS6 STANDARD CELLS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability

tristate nand gate

Abstract: HCMOS6
Contextual Info: CB45000 SERIES  HCMOS6 STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

bi 370 transistor

Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor
Contextual Info: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) ƒ ƒ ƒ ƒ ƒ Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization

UM 66 datasheet

Abstract: UM 66 in
Contextual Info: 0.22um 1P5M Logic 2.5V /3.3V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ Vdd Core/IO Well Isolation Transistor Channel Gate Oxide Gate Material LDD & Source/Drain ƒ Metallization Barrier Metal Metal Stacked Via ƒ Lithography ƒ Speed (nsec/gate) 2.5V/3.3V

nmos transistor 0.35 um

Contextual Info: 0.25um 1P5M Logic 2.5V / 3.3V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization

0.35uM STI

Abstract: MAGNACHIP 0.35um 0.32um CMOS
Contextual Info: 0.25um 1P5M Generic 2.5V / 3.3V or 2.5V / 5V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric

Contextual Info: 0.25um 2P5M Mixed Signal 2.5V / 3.3V updated in Oct 01, 2004 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization

Contextual Info: Foundry Services for Integrated Circuits and MEMS Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s Custom Foundry Service is the alternative to traditional foundry services, allowing customers to

Contextual Info: MICREL FOUNDRY SERVICES: S I L I C O N M A D E I N S I L I C O N VA L L E Y Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s custom foundry service is the alternative to traditional foundry services, allowing customers to develop their

manufacturer list cots radiation

Abstract: RAD HARD TRENCH TRANSISTOR TSMC Flash microcontroller radiation hard cmos cots radiation microcontroller radiation hard datasheet process flow diagram radiation cots cmos Upsets microcontroller radiation tolerance
Contextual Info: Special Feature Rad Hard, Space Ready Case Study: Evolution of a Fab-Independent Radiation-Hardened COTS IC Supplier Even though rad-hard systems are essential in space and tactical military systems, rad-hard semiconductor processes are rare. But what’s even more

delco 466

Abstract: seagate hard drive pcb TSC6000 TGC6000 op amp app notes variable PWM by using dsp TMS320F240 C240 TMS320 TMS320C240 app abstract
Contextual Info: EXTENDING YOUR REACHTM NORTH AMERICAN EDITION INTEGRATION VOL. 13 ▼ NO. 6 ▼ SEPTEMBER 1996 AN UPDATE ON TEXAS INSTRUMENTS SEMICONDUCTORS Two gate arrays Microscopic photo of gate array 0.18-micron technology offers flexibility, innovation T Metal interconnect

Transistor morocco 9740

Abstract: Ablebond 8360 con hdr hrs ablebond 8086 interfacing with 8254 peripheral Date Code Formats diodes St Microelectronics formatter board Canon interfacing of 8237 with 8086 ST tOP MaRKinGS 388BGA
Contextual Info: RELIABILITY REPORT Q98001 SICL BUSINESS UNIT REPORT NUMBER : Q98001 QUALIFICATION TYPE : NEW DEVICE - NEW PACKAGE DEVICE : STPC Client SIP101 SALES TYPES : STPCD0166BTC3 - STPCD0175BTC3 TECHNICAL CODE : MDBT*CHDT1BR PROCESS : HCMOS6 - CROLLES FAB LOCATION

ASX 12 D Germanium Transistor

Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
Contextual Info: v ol 4 3 ume A publication of IBM Microelectronics IBM’s Blue Logic Strategy In This Issue Third Quarter 1998, Vol. 4, No.3 1 IBM’s Blue Logic Strategy 4 High-Speed Design Styles Leverage IBM Technology Prowess 8 Low-Power Methodology and Design Techniques

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

AT90PWM81

Contextual Info: Features • High performance, low power Atmel AVR® 8-bit Microcontroller • Advanced RISC architecture • • • • – 131 powerful instructions - most single clock cycle execution – 32 x 8 general purpose working registers – Fully static operation

AMP0E

Abstract: AT90PWM81
Contextual Info: Features • High Performance, Low Power AVR 8-bit Microcontroller • Advanced RISC Architecture – 131 Powerful Instructions - Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation – Up to 1 MIPS Throughput per MHz