RETENTION MECHANISMS Search Results

EEPROM retention testing

Abstract: flash "high temperature data retention" mechanism ANH005 P1005 flash Activation Energy
Contextual Info: Hybrid Memory Products Ltd Floating Gate Memory Arrays Retention Issues Introduction This document reviews the nature of Data Retention, and presents approaches to its specification and verification based upon procedures defined in the following IEEE publication:

RAMTRON

Contextual Info: Application Note Data Retention through Soldering Data retention at very high temperature Overview It is often desirable to program a nonvolatile memory device prior to soldering it onto a circuit board. This requirement may occur when the nonvolatile memory

Contextual Info: PRELIMINARY FM25H20 2-Mbit 256 K x 8 Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

agp connector

Abstract: atx connector agp card atx add-in card mounting bracket pci
Contextual Info: ECR #: 48 Title: AGP Card Retention Feature Release Date: 12/14/98 Impact: Change Spec Version: A.G.P. 2.0 Summary: AGP cards require retention in addition to the I/O mounting bracket, which is currently the sole method of retaining the cards. Using only the I/O mounting bracket as the retainer results in

Contextual Info: PRELIMINARY FM25H20 2-Mbit 256 K x 8 Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table)

Contextual Info: FM25CL64B 64-Kbit 8 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: FM25C160B 16-Kbit 2 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: FM25640B 64-Kbit 8 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: FM25L04B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: FM25L16B 16-Kbit 2 K x 8 Serial (SPI) F-RAM 16-Kbit (2 K × 8) Serial (SPI) F-RAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

BD3X

Abstract: ST1305 ST1331 ST1333 ST1335 ST1336
Contextual Info: ST1331 ST1333 ST1335 ST1336 HIGH ENDURANCE CMOS 272 Bit EEPROM WITH STATE OF THE ART SECURITY MECHANISMS BRIEF DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5 VOLTS POWER SUPPLY HIGHLY RELIABLE CMOS EEPROM TECHNOLOGY: • 10 years data retention

BD3X

Abstract: sk 192
Contextual Info: ST1331 ST1333 ST1335 ST1336 HIGH ENDURANCE CMOS 272 Bit EEPROM WITH STATE OF THE ART SECURITY MECHANISMS BRIEF DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5 VOLTS POWER SUPPLY HIGHLY RELIABLE CMOS EEPROM TECHNOLOGY: • 10 years data retention

Contextual Info: ST1331 ST1333 ST1335 ST1336 SGS-THOMSON m HIGH ENDURANCE CMOS 272 Bit EEPROM WITH STATE OF THE ART SECURITY MECHANISMS BRIEF DATA Figure 1 Delivery forms SINGLE 5 VOLTS POWER SUPPLY HIGHLY RELIABLE CMOS EEPROM TECHNOLOGY: • 10 years data retention • 1 Million Erase/Write cycles endurance

Gunn Diode symbol

Abstract: cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet
Contextual Info: CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY APPENDIX A: FAILURE RATE CALCULATION Thermal Acceleration Factors Acceleration factors AF for thermal stresses (High Temperature Operating Life, Data Retention and High Temperature Steady State Life) are calculated from the Arrhenius equation.

FM25640-GTR

Abstract: AEC-Q100 FM25040 FM25640 FM25640-G FM25640-S
Contextual Info: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25160

Abstract: FM25C160 FM25C160-S
Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25W256

Abstract: FM25W256-G FM25W256-S
Contextual Info: Preliminary FM25W256 256Kb FRAM Wide Voltage Serial Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25640-S

Abstract: FM25040 FM25640 FM25640-G
Contextual Info: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25256B-G

Abstract: FM25256B
Contextual Info: FM25256B 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM25L16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25CL64BG

Abstract: r5l64B FM25L64B fm25cl64b-g FM25CL64B-GTR fm25l64
Contextual Info: FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process