RESISTANCES AND CAPACITANCES Search Results

RESISTANCES AND CAPACITANCES

Abstract: Resistance Values UniOhm RESISTANCES
Contextual Info: Standard Resistance Values Uniohm Corporation Standard Resistance Values For resistances and capacitances According to IEC publication 63 1

89051

Abstract: DH80102 89189 DH80052 89186
Contextual Info: HIGH-VOLTAGE PIN AND NIP DIODES e - This series of high power, high voltage PIN and NIP diodes Incorporates passivated mesa technology. A broad range Is available, in terms of breakdown voltages, junction capacitances, and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.

719C1CC

Contextual Info: STANDARD SERIES OF VALUES IN A DECADE i ~ STANDARD SERIES OF VALUES IN A DECADE for resistances and capacitances a c c o rd in g to IE C p u b lic a tio n 6 3 Film Capacitors HOW TO INTERPRET CAPACITANCE

Standard Resistance Values In a Decade

Abstract: e-192 E96-E48 E192
Contextual Info: HITANO ENTERPRISE CORP. STANDARD RESISTANCE VALUES IN A DECADE for resistances and capacitances According to IEC publication 63 E192 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121 123 124 126 127 129 130 132 133 135 137 138 140 142 143

E-192

Abstract: E192
Contextual Info: STANDARD SERIES OF VALUES IN A DECADE FOR RESISTANCES AND CAPACITANCES According to “IEC publication 63”. E192 E96 E48 E192 E96 E48 E192 E96 E48 E192 E96 E48 E24 E12 E6 E3 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121 123 124 126

422 164

Abstract: 453 348 E192
Contextual Info: STANDARD SERIES OF VALUES IN A DECADE FOR RESISTANCES AND CAPACITANCES In accordance with “IEC publication 60063”. E192 E96 E48 E192 E96 E48 E192 E96 E48 E192 E96 E48 E24 E12 E6 E3 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121 123

Contextual Info: E-Series Values www.vishay.com Vishay Standard Series Values in a Decade for Resistances and Capacitances E3 TO E192 E192 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121 123 124 126 127 129 130 132 133 135 137 138 140 142 143 145 147 149

E192

Abstract: IEC60063 E192 Series 60063 A 221 542 04
Contextual Info: E-Series Values Vishay Standard Series of Values in a Decade for Resistances and Capacitances E3-E192 According to IEC 60063 E192 E96 E48 E192 E96 E48 E192 E96 E48 E192 E96 E48 E24 E12 E6 E3 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121

Multi-gate pHEMT Modeling for Switch Applications

Contextual Info: Multi-gate pHEMT Modeling for Switch Applications Ce-Jun. Wei, Hong Yin, Olesky Klimashov, Yu Zhu, and Dylan Bartle Skyworks Solutions, Inc., 20 Sylvan Road, Woburn, USA Abstract - Multi-gate pHEMTs are extensively used in pHEMT switch circuits for wireless communication

IGBT JUNCTION TEMPERATURE CALCULATION

Abstract: 0642
Contextual Info: APPLICATION NOTE Page 1 of 3 Thermal Impedance Models The thermal behavior of semiconductors can be described by two different models: Continued fraction model Tj Tcase The above shown model reflects the physical layer structure of a semiconductor – thermal capacitances with thermal resistances in

sine wave generator using ic 555

Abstract: siemens relais V23162 siemens relais V23162-B0422-b110 sine wave generator technic LP03 LP05 DLP05 132051
Contextual Info: ICs for Communications Signal Processing Subscriber Line Interface Codec Filter SLICOFI PEB 3065 High Voltage Subscriber Line IC HV-SLIC PEB 4065 Line Testing with SLICOFI/HV-SLIC Application Note 1997-07-01 DS 1 PEB 3065/PEB 4065 Revision History: Current Version: 1997-07-01

weld inverter circuit diagram

Abstract: 4433.619 CXZ49LFA cxz49ffa 3579.545 CX8045GB xtal 16mhz 8pf CXH49SFB CX5032GB CX-101F
Contextual Info: Crystal Units Surface Mount Type CX2520SB CX-2520SB 2.5x2.0mm for Audio & Visual, Office Equipment Features RoHS Compliant Pb Free How to Order • Crystal unit for audio-visual, office equipment CX2520SB 27000 D0 P E S ZZ • Ultra-miniature and low profile (2.5x2.0x0.45mm)

BJT 2N2222 datasheet

Abstract: bjt 2n2222 transistor BJT 2N2222 BJT 2N2222 beta 2N2222 bjt circuits using BJT 2N2222 hmc1022 BJT 2N2222 datasheet beta circuits using BJT 2N2222 in transistor IRF7105N
Contextual Info: AN213 SENSOR PRODUCTS APPLICATION NOTE SET/RESET FUNCTION FOR MAGNETIC SENSORS ABSTRACT Honeywell’s Anisotropic Magneto-Resistive AMR sensors are fabricated with Permalloy (NiFe) thin films that create changes in resistivity with respect to external magnetic fields. These film materials are

OT-33

Abstract: 12000.000 Mhz 3579.545 CX-5FW XTAL CX 3225SB CX-5FD CX-101F CX-2520SB CX-3225SB CX-4025S
Contextual Info: Crystal Units Surface Mount Type CX-2520SB 2.5x2.0A for Audio & Visual, Office Equipment Standard Frequencies Features • Crystal Unit for Audio-Visual, Office Equipment • Ultra-miniature and low profile. 2.5x2.0x0.45mm • Ceramic package. • A lead free product.

IN60 diode

Abstract: IN60 diode IN60 equivalent diode for diode IN34 Hitachi DSA002788 RFS TM3
Contextual Info: HA12188AF Pre-Amplifier and Servo IC for Quadruple-Speed CD-ROM ADE-207-183 Z 1st Edition Description The typical values of built-in capacitances in this IC are reduced 10% compared with those in IC HA12188F. The values of Electrical Characteristics of this IC are same as those of IC HA12188F.

DSA003635

Abstract: 496k S43 Package s60 39 HA12188AF HA12188F K21850 transistor s43
Contextual Info: HA12188AF Pre-Amplifier and Servo IC for Quadruple-Speed CD-ROM ADE-207-183 Z 1st. Edition October 1995 Description The typical values of built-in capacitances in this IC are reduced 10% compared with those in IC HA12188F. The values of Electrical Characteristics of this IC are same as those of IC HA12188F.

IN60 diode

Abstract: equivalent diode for diode IN60 in60 hitec servo S60 S21 HA12188AF HA12188F Laser pickup 11t 36 Photodiode and amplifier IC for CD Hitachi DSA00480
Contextual Info: HA12188AF Pre-Amplifier and Servo IC for Quadruple-Speed CD-ROM ADE-207-183 Z 1st. Edition October 1995 Description The typical values of built-in capacitances in this IC are reduced 10% compared with those in IC HA12188F. The values of Electrical Characteristics of this IC are same as those of IC HA12188F.

RF Transistor s-parameter

Abstract: bipolar transistor s-parameter lm 7803 s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics transistor D 5032 bipolar transistor ghz s-parameter 60Ghz TRANSISTOR 30GHZ qubic4
Contextual Info: IEEE BCTM 10.2 An S-parameter Technique for Substrate Resistance Characterization of RF Bipolar Transistors S.D. Harker*, R.J. Havenst , J.C.J. Paasschenst , D. Szmyd*, L.F. Tiemeijer*, and E.F. Weagel* ‘ Philips Semiconductors, 9201 Pan American Frwy. NE, Albuquerque, NM 87113, USA

tda4863 equivalent

Abstract: DN-PFC-TDA4863-1 TDA4863 pfc TDA4863 TDA4863 application note MUR460 SPP20N60 equivalent tda4863 Cross References Data power mosfet SPP20N60C3
Contextual Info: Design Note, V1.0, Mar. 2003 T D A4 8 6 3 DN-PFC-TDA4863-1 TDA4863 Driving MOSFET with large Capacitances Author: Wolfgang Frank http://www.infineon.com/pfc Power Management & Supply N e v e r s t o p t h i n k i n g . TDA4863 Driving MOSFET with large Capacitances

triggering scr with microprocessor

Abstract: cmos function generator using cd4049 ic mm74hc national semiconductor CD4000 scr Power Supply Schematic Diagram MM74HC cmos scr CD4049 Application AN-339 national AN-339
Contextual Info: INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies The latch-up mechanism once triggered turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC to ground This generally destroys the CMOS IC or at

ic mm74hc

Abstract: triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC
Contextual Info: Fairchild Semiconductor Application Note 339 November 1987 INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies. The latch-up mechanism, once triggered, turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC

Contextual Info: 5JP-A CATHODE-RAY TUBES T h e T yp e 5JP -A C athode-ray T u b es are de­ signed for oscillographic applications w here low deflection p late capacitances are essential. T h e de­ flection plate leads are short and direct, term inat­ ing in caps on the w all of the tube rather than in

HP5082-4204

Abstract: HP-5082-4204 HP5082-4204 photodiode OPA111 hp5082 diode PDS-434 Burr-Brown instrumentation amplifier 1971 internal AB-075 4204 photo diode OPA2111
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

HP5082-4204

Abstract: HP5082-4204 photodiode HP-5082-4204 PHOTODIODE current voltage amplifier array PDS-434 AB-075 OPA111 OPA128 OPA2111 OPA404
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132