C 34 F
Abstract: 1SV274 D234
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV274
C25V/C28V
470MHz
C 34 F
1SV274
D234
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YTF822
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSn YTF822 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. 03.6±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance
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YTF822
20kXi)
YTF822
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2SK578
Abstract: 2SK57
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance
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2SK578
0-22n
0-a25
2SK578
2SK57
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YTFP450
Abstract: SC651
Text: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :
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YTFP450
VDS-10V,
00A/ps
YTFP450
SC651
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SN75435
Abstract: SN74ls194
Text: SN75435 QUADRUPLE PERIPHERAL DRIVER WITH OUTPUT FAULT PROTECTION SLRS003A- D2848, FEBRUARY 1985 - REVISED NOVEMBER 1989 Saturating Outputs With Low On-State Resistance Very Low Standby Power. . . 53 mW Max High-impedance MOS- or TTL- Compatible Inputs Standard 5-V Supply Voltage
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SN75435
SLRS003A-
D2848,
600-mA
SN7427
SN74LS194
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Untitled
Abstract: No abstract text available
Text: Board to Board Connectors FH Free Height 0.8mm Pitch Connectors Board to Board SMT Typed/With Solder Peg Receptacle Assemblies Applicable Board Stacking Heights = 5mm/6mm/7mm/8mm Material and Finish: Housing- UL94V-0 rated, heat-resistant thermoplastic,
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UL94V-0
-177984-Q
179485-D*
-179029-D
2-179485-D*
-179030-n
4-179485-Q*
6-179485-D*
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2917 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2917 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance
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2SK2917
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000
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TIM0910-15L
30dBm
145mA
2-11C1B)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA8210AH/AL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8210AH, TA8210AL 20W BTLX2CH AUDIO POWER AMPLIFIER The thermal resistance dj-T of TA8210AH, TA8210AL package designed for low thermal resistance, has a high efficiency of heat radiation.
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TA8210AH/AL
TA8210AH,
TA8210AL
TA8210AL
HZIP17-P-2
575TYP
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MG30G2YM1
Abstract: LD30A
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance
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MG30G2YM1
15AIN-SOURCE
MG30G2YM1
LD30A
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Untitled
Abstract: No abstract text available
Text: SN74CBT3257 QUADRUPLE 2-BIT TO 1-BIT FET MULTIPLEXER/DEMULTIPLEXER SCDS017-MAY 1995 I • • • • S[ 1 1B1 [ 2 1B2 [ 3 1A [ 4 description The SN74CBT3257 is a quadruple 2-bit to 1-bit high-speed TTL-compatible FET multiplexer/ demultiplexer. The low on-state resistance of the
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SN74CBT3257
SCDS017-MAY
QS3257
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK1359 Field Effect Transistor U nit in m m Silicon N Channel MOS Type tc-MOS 11.5 15.9MAX High Speed, High Current DC-DC Converter, 032±O2 & Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance cJ " Rds(ON) = 3-OQ (Typ.)
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2SK1359
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)
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TPC8103
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LS125
Abstract: No abstract text available
Text: SN 75A LS125, SN 75A LS127 SEVEN-CHANNEL LINE RECEIVERS D 2 2 3 9 , APHIL 1 9 B 7 -R E V IS E D AU G U S T 1 9 8 9 • Meets IBM 3 6 0 /3 7 0 I/O Specification • Input Resistance . . . 7 kft to 20 k!7 • Output Compatible with TTL SN75ALS125 . D, J, OR N PACKAGE
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LS125,
LS127
SN75ALS125
16-Pin
SN75ALS127
LS125
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ567 TOSHIBA Field Effect Transistor TEN TA TIVE] Silicon P Channel MOS Type ji-M OSV 2SJ567 Switching Applications Chopper Regulator, D C -D C Converter and Motor Drive Applications Features • Low drain-source ON resistance: R d S (ON) = 1.6 £2 (typ.)
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2SJ567
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MG15D6EM1
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15D6EM1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance
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MG15D6EM1
MG15D6EM1
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Untitled
Abstract: No abstract text available
Text: RECTIFIERS SES5601C SES5602C SES5603C High Efficiency, 25A Center-Tap FEATURES • Low Forward Voltage • Fast Switching Speed • Convenient Package • High Surge Capability • Low Thermal Resistance • Mechanically Rugged TO-3 Package • Available as Positive or Negative Center-Tap
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SES5601C
SES5602C
SES5603C
SES5601C.
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2sk851
Abstract: 0070-II
Text: 2SK851 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E Cr-MOSli INDUSTRIAL A P P L I CATIONS HIGH SPEED, HIGH CURRENT S WITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONV E R T E R A N D MOTOR DRIVE APPLICATIONS. • L o w Dra i n - S o u r c e ON Resistance
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2SK851
070ii
100nA
300uA
RGg-20kQ)
2sk851
0070-II
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Untitled
Abstract: No abstract text available
Text: co 0} K O D + 0.1 A ± 0 .7 5 4 in 2 .77±0.05 TYP o CL NOTE: o o 0 1.04 TYP 1. SPECIFICATIONS: +l CN xh 4 - 44-4-4-44-44- 4 4 - - 250 RATING: VAC. RESISTANCE: CONT ACT RESISTANCE: 500 D VAC RMS). 100 0 MEGOHMS MIN. 50 MILLIOHMS MAX. OPERATING TEM PERATURE:
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0398-X
14-NOV-2002
C-440398
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV230 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV230 Unit in mm CATV CONVERTER 1st OSC TUNING. • High Capacitance Ratio : C2V ! C20V = 8 Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner.
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1SV230
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2953 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2953 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance
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2SK2953
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2SK2038
Abstract: Transistor TOSHIBA 2SK
Text: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)
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2SK2038
DRAI11
2SK2038
Transistor TOSHIBA 2SK
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : RDS(ON) = 100m n (Typ.)
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TPC8302
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2SK1357
Abstract: 2Sk1357 transistor
Text: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )
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2SK1357
300/uA
10jKS
2SK1357
2Sk1357 transistor
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