pj 82 diode
Abstract: pj 906 diode pj 906 pj 48 diode diode pj 33 Phototransistor bp 101 DIODE PJ 2450 pj 17 diode ha17385 0/pj 906 diode
Text: HA17431VPJ/PJ/PAJ/FPJ/FPAJ/PNAJ/UPA, HA17432UPA Shunt Regulator REJ03D0892-0100 Rev.1.00 Apr 03, 2007 Description The HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precision reference voltage source can
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HA17431VPJ/PJ/PAJ/FPJ/FPAJ/PNAJ/UPA,
HA17432UPA
REJ03D0892-0100
HA17431
pj 82 diode
pj 906 diode
pj 906
pj 48 diode
diode pj 33
Phototransistor bp 101
DIODE PJ 2450
pj 17 diode
ha17385
0/pj 906 diode
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transistor ha17431p
Abstract: No abstract text available
Text: Data Sheet HA17431 Series R03DS0086EJ0400 Rev.4.00 Jan 10, 2014 Shunt Regulator Description The HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precision reference voltage source can
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HA17431
R03DS0086EJ0400
HA17431VLP,
transistor ha17431p
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sc43a
Abstract: transistor ha17431p HA17431P HA17431 HA17431FP HA17431FPA HA17431PA HA17431PNA HA17431VLP HA17431VP
Text: HA17431 Series Shunt Regulator REJ03D0678-0300 Rev.3.00 Apr 03, 2007 Description The HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precision reference voltage source can
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HA17431
REJ03D0678-0300
HA17431VLP,
HA17431VLP
sc43a
transistor ha17431p
HA17431P
HA17431FP
HA17431FPA
HA17431PA
HA17431PNA
HA17431VP
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HA17431
Abstract: HA17431FPAJ HA17431FPJ HA17431PAJ HA17431PJ HA17431PNAJ HA17431VPJ HA17432UPA pj 906 NEC uPA
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: BB501C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0830-0600 Previous ADE-208-701D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;
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BB501C
REJ03G0830-0600
ADE-208-701D)
200pF,
OT-343mod)
PTSP0004ZA-A
BB501C
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BB501C
Abstract: No abstract text available
Text: BB501C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0830-0600 Previous ADE-208-701D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;
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BB501C
REJ03G0830-0600
ADE-208-701D)
200pF,
OT-343mod)
PTSP0004ZA-A
BB501C
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BB101C
Abstract: No abstract text available
Text: BB101C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0821-0300 Previous ADE-208-505A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
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BB101C
REJ03G0821-0300
ADE-208-505A)
200pF,
OT-343mod)
PTSP0004ZA-A
BB101C
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Untitled
Abstract: No abstract text available
Text: BB101M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0822-0300 Previous ADE-208-504A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
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BB101M
REJ03G0822-0300
ADE-208-504A)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB101M
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BB502C
Abstract: C5 MARKING CODE SOT 247 rfc bb 204
Text: BB502C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0832-0600 Previous ADE-208-810C Rev.6.00 Apr 27, 2006 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502C
REJ03G0832-0600
ADE-208-810C)
200pF,
OT-343mod)
PTSP0004ZA-A
BB502C
C5 MARKING CODE SOT 247
rfc bb 204
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Untitled
Abstract: No abstract text available
Text: BB101C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0821-0300 Previous ADE-208-505A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
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BB101C
REJ03G0821-0300
ADE-208-505A)
200pF,
OT-343mod)
PTSP0004ZA-A
BB101C
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Untitled
Abstract: No abstract text available
Text: BB301M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0824-0300 Previous ADE-208-506A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
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BB301M
REJ03G0824-0300
ADE-208-506A)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB301M
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Untitled
Abstract: No abstract text available
Text: BB503C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0834-0500 Previous ADE-208-812C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz
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BB503C
REJ03G0834-0500
ADE-208-812C)
200pF,
OT-343mod)
PTSP0004ZA-A
BB503C
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Untitled
Abstract: No abstract text available
Text: BB501M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0831-0600 Previous ADE-208-700D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;
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BB501M
REJ03G0831-0600
ADE-208-700D)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB501M
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Untitled
Abstract: No abstract text available
Text: BB503M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0835-0500 Previous ADE-208-811C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz
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BB503M
REJ03G0835-0500
ADE-208-811C)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB503M
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BB503C
Abstract: No abstract text available
Text: BB503C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0834-0500 Previous ADE-208-812C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz
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BB503C
REJ03G0834-0500
ADE-208-812C)
200pF,
OT-343mod)
PTSP0004ZA-A
BB503C
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BB502C
Abstract: ADE-208-810C PTSP0004ZA-A
Text: BB502C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0832-0500 Previous ADE-208-810C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502C
REJ03G0832-0500
ADE-208-810C)
200pF,
OT-343mod)
PTSP0004ZA-A
BB502C
ADE-208-810C
PTSP0004ZA-A
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TRIAC BCR 16 km
Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
Text: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)
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R07CS0003EJ0200
TRIAC BCR 16 km
PJ 1199 diode
TRIAC BCR 12 km
catalog transistor
TO-220-AR
RENESAS marking code package triac sot 89
TRIAC BCR 10 AM
pj 999 diode
TO-92-AB
110N04
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502C
R07DS0283EJ0700
REJ03G0832-0600)
200pF,
OT-343mod)
PTSP0004ZA-A
BB502C
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502M
R07DS0284EJ0600
REJ03G0833-0500)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB502M
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Untitled
Abstract: No abstract text available
Text: BB302M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0825-0400 Previous ADE-208-572B Rev.4.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
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BB302M
REJ03G0825-0400
ADE-208-572B)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB302M
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502C
R07DS0283EJ0700
REJ03G0832-0600)
200pF,
OT-343mod)
PTSP0004ZA-A
BB502C
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