RENESAS LOW VOLTAGE MOSFET Search Results

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

Hdd spindle motor

Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA
Contextual Info: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts

jrc 2100 audio amplifier

Abstract: HA13166 HA17324A LM324 HA13165 M51995AFP M51995P ha13168 HA17555 equivalent HA13164A IC ha17555
Contextual Info: 2004.4 Management Linear ICs/ Renesas Standard Linear ICs Power Multi-Purpose Linear ICs Status List Topic 1—Series of Small Multi-Purpose Linear ICs for Low-Voltage Operation •··················································2

R2A25107KFP

Abstract: detailed vfd circuit diagram for motor three phase VFD connection to 3 phase motor vfd ac motor detailed circuit diagram pwm INVERTER 3 phase 400 hz vfd
Contextual Info: Preliminary Data Sheet R2A25107KFP Intelligent Power Device for MOSFET Pre-drive R07DS0689EJ0100 Rev.1.00 Mar 22, 2012 Description The R2A25107KFP device is an intelligent power device to pre-drive the FET inverter of a 3-phase blushless motor. This device contains three sets of pre-driver that are applicable to both 12-V and 24-V battery systems. This IC also

RAA23

Abstract: D2417 RAA230409 5 pin LDO IC - LP top mark RAA230408 RAA230401
Contextual Info: Preliminary Datasheet RAA23040x Series [Under Development] R18DS0004EJ0101 Rev.1.01 Oct 18, 2012 3-ch Step-Down Switching Regulator + 1-ch LDO Description The RAA23040x is a power supply IC that has 3-ch step-down Switching Regulator containing power MOSFETs and

RAA230214

Abstract: RAA230215 dstb 1000 25VIREG RAA23
Contextual Info: Preliminary Datasheet RAA23021x Series [Under Development] R18DS0003EJ0001 1-ch Step-Down Switching Regulator + 1-ch LDO Rev.0.01 Oct 18, 2012 Description The RAA23021x is a power supply IC that has 1-ch step-down Switching Regulator containing power MOSFETs and

Contextual Info: PreliminaryData Sheet NE5820M53 R09DS0005EJ0200 Rev.2.00 May 20, 2011 P-channel MOS Field Effect Transistor for Impedance Converter of Microphone DESCRIPTION The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.

infrared application renesas

Abstract: HS350 marking B8 R09DS0005EJ0100
Contextual Info: PreliminaryData Sheet NE5820M53 R09DS0005EJ0100 Rev.1.00 Jul 9, 2010 P-channel MOS Field Effect Transistor for Impedance Converter of Microphone DESCRIPTION The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.

SPM4012

Abstract: FDSD0420
Contextual Info: Preliminary Datasheet RAA207700GBM/7701GBM/7702GBM R07DS0891EJ0001 Rev.0.01 Nov 29, 2012 Synchronous Buck Regulator with Internal Power MOSFETs Description The RAA207700GBM is monolithic synchronous buck regulator with power MOSFETs in extremely small package.

PA2660T1R

Contextual Info: Data Sheet PA2660T1R R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 mΩ Description The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Preliminary Datasheet RAA207700GBM/7701GBM/7702GBM R07DS0891EJ0051 Rev.0.51 Mar 04, 2013 Synchronous Buck Regulator with Internal Power MOSFETs Description The RAA207700GBM is monolithic synchronous buck regulator with power MOSFETs in extremely small package.

Contextual Info: Datasheet RAA23040x 3-ch Step-Down Switching Regulator + 1-ch LDO R18DS0004EJ0102 Rev.1.02 Jul.09, 2013 Description The RAA23040x is a power supply IC that has 3-ch step-down Switching Regulator containing power MOSFETs and 1-ch LDO. Features • Switching Regulator ch1, ch3, ch4

M65817AFP

Abstract: Low Voltage Detector M61556FP M65881AFP SSOP42-P-450-0 M61557FP
Contextual Info: M61556FP 100 W 1-Channel Amplifier Predriver REJ03F0089-0100Z Rev.1.0 Sep.19.2003 Description The M61556FP is a predriver IC developed for use as the output driver of a digital audio power amplifier. It can be combined with an N-channel MOSFET to create a 100 W, 1-channel 8Ω load digital amplifier. (The 200 W version,

Contextual Info: Preliminary Datasheet RAA207700GBM/7701GBM/7702GBM R07DS0891EJ0050 Rev.0.50 Feb 06, 2012 Synchronous Buck Regulator with Internal Power MOSFETs Description The RAA207700GBM is monolithic synchronous buck regulator with power MOSFETs in extremely small package.

Contextual Info: Data Sheet PA2631T1R R07DS0991EJ0101 Rev.1.01 Sep 04, 2013 P-CHANNEL MOSFET –20 V, –6.0 A, 32 mΩ Description The μPA2631T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Preliminary Data Sheet PA2561T1H R07DS0006EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments.

Contextual Info: Preliminary Datasheet H7N1004FM R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 Silicon N-Channel MOSFET High-Speed Power Switching Features •    Low on-resistance RDS on = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AD-A

Contextual Info: Preliminary Datasheet H7N1004FM R07DS0209EJ0200 Previous: REJ03G0073-0100 Rev.2.00 Dec 02, 2010 Silicon N-Channel MOSFET High-Speed Power Switching Features •    Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive

Contextual Info: Preliminary Datasheet H7N1004FM R07DS0209EJ0300 Rev.3.00 Feb 23, 2012 Silicon N-Channel MOSFET High-Speed Power Switching Features •    Low on-resistance RDS on = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AD-A

Contextual Info: Preliminary Datasheet HAT1093C R07DS0605EJ0600 Previous: REJ03G1230-0500 Rev.6.00 Jan 06, 2012 Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS(on) = 41 m typ. (at VGS = –4.5 V)  Low drive current.  1.8 V gate drive devices.

PD168807

Contextual Info: Preliminary Data Sheet PD168807 4-ch Output DC-DC Converter Controller IC R03DS0001EJ0200 Rev.2.00 Mar 18, 2011 Description The μ PD168807 is a DC-DC converter controller IC that consists of 3-ch output circuits containing power MOSFET and 1-ch output circuits that can directly drive power MOSFET.

Contextual Info: Data Sheet PA2600T1R R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Data Sheet PA2600T1R R07DS0998EJ0101 Rev.1.01 Sep 04, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

2SK4079

Abstract: QN7002
Contextual Info: Preliminary Data Sheet QN7002 R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.