Reliability of High Power Bipolar devices
Abstract: IEC60747-6 IEC60749-25 IEC60749 IEC60749-23 IEC60749-34 what is the drawback of operating system IEC60749-12 thyristor handbook design IEC60068-2-14
Text: AN 5948 Reliability of High Power Bipolar Devices Application Note AN5948-2 September 2009 LN26862 Authors: Dinesh Chamund, Colin Rout INTRODUCTION We are often asked “What is the MTBF or FIT rating of this diode or that thyristor?” We cannot answer this without knowing how the
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AN5948-2
LN26862
Reliability of High Power Bipolar devices
IEC60747-6
IEC60749-25
IEC60749
IEC60749-23
IEC60749-34
what is the drawback of operating system
IEC60749-12
thyristor handbook design
IEC60068-2-14
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Untitled
Abstract: No abstract text available
Text: 36VHigh-performance, High-reliability Withstand Voltage Stepping Motor Driver BD63710AEFV ●General Description BD63710AEFV is a bipolar low-consumption driver that driven by PWM current. Rated power supply voltage of the device is 36 V, and rated output current is 1.0 A.
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36VHigh-performance,
BD63710AEFV
BD63710AEFV
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Abstract: No abstract text available
Text: 36VHigh-performance, High-reliability Withstand Voltage Stepping Motor Driver BD63715AEFV ●General Description BD63715AEFV is a bipolar low-consumption driver that driven by PWM current. Rated power supply voltage of the device is 36 V, and rated output current is 1.5 A.
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36VHigh-performance,
BD63715AEFV
BD63715AEFV
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toy motor 1.5 to 3 v datasheet
Abstract: No abstract text available
Text: 36VHigh-performance, High-reliability Withstand Voltage Stepping Motor Driver BD63720AEFV ●General Description BD63720AEFV is a bipolar low-consumption driver that driven by PWM current. Rated power supply voltage of the device is 36 V, and rated output current is 2.0 A.
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36VHigh-performance,
BD63720AEFV
BD63720AEFV
toy motor 1.5 to 3 v datasheet
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Abstract: No abstract text available
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
DS111220
SZP5026ZSQ
SZP5026ZSR
SZP5026Z
15GHz
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SZP-5026
Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
SZP5026Z
SZP5026Z-EVB1
SZP5026Z-EVB2
15GHz
35GHz
DS091202
SZP-5026
600s5r6cw250
5.7Ghz low noise amplifier
SOF-26
MLCC rework
recommended land pattern for 0402 cap
e483
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SOF-26
Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
SZP-5026Z-EVB1
SZP-5026Z-EVB2
15GHz
35GHz
EDS-105366
SOF-26
SZP-5026
5.7Ghz low noise amplifier
600S4R7
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600S4R7
Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SZP-5026Z
SOF-26
DS110620
SZP5026ZSQ
SZP5026ZSR
SZP5026Z
SZP5026Z-EVB1
600S4R7
600S0R5CW250
0805HQ-5N6XJBB
Coilcraft 0805
e483
SZP-5026
ZO21
600S5R6
600S4R7cw250
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SZP-5026-HWD
Abstract: No abstract text available
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SZP-5026Z
SOF-26
DS111220
SZP5026ZSQ
SZP5026ZSR
SZP5026Z
SZP5026Z-EVB1
SZP-5026-HWD
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Untitled
Abstract: No abstract text available
Text: Power MOSFET Construction and Characteristics Power MOSFET in Detail 2. Construction and Characteristics Since Power MOSFETs operate principally as majority carrier devices, adverse influences are relatively small magnitude or importance. This is in contrast to the situation with minority carrier
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tda7851
Abstract: tda7388 TDA7385H 4x50W tda7563H tda7561h 500w audio tda7388 2x40w 4X45W tda7570
Text: Power ICs for car infotainment From audio power amplifiers to power management devices STMicroelectronics is one of the world’s leading suppliers of power integrated circuits ICs in the field of car infotainment, and the recognized market leader in power
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Flexiwatt27
Multiwatt15
PowerSO-36
PowerSSO36
FLCARENT1106
tda7851
tda7388
TDA7385H
4x50W
tda7563H
tda7561h
500w audio tda7388
2x40w
4X45W
tda7570
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GaAs Amplifier Micro-X Marking k
Abstract: gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3
Text: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components
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HPAC140
MWP-25
MWP-35
GaAs Amplifier Micro-X Marking k
gaas fet micro-X Package marking
GaAs Amplifier Micro-X
BFY193
BFY40
CFY66
BFY420
BFY193 Microx
Microwave Semiconductors
transistor "micro-x" "marking" 3
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GaAs Amplifier Micro-X Marking k
Abstract: LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"
Text: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components
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HPAC140
MWP-25
MWP-35
GaAs Amplifier Micro-X Marking k
LNA ku-band
Silicon Bipolar Transistor MICRO-X
CLY30
CLY27
microwave fet IC
gaas fet micro-X Package
gaas fet micro-X Package marking
SIEMENS MICROWAVE RADIO 8 GHz
GaAs Amplifier Micro-X "Marking k"
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Abstract: No abstract text available
Text: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States
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AD571
Abstract: AD571-000C
Text: 10-Bit, A/D Converter AD571 1.0 2.0 3.0 3.2 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein.
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10-Bit,
AD571
MIL-PRF-38534,
com/AD571
ASD0012806
6-JUN-2009
AD571
AD571-000C
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Abstract: No abstract text available
Text: Tuesday, May 6, 2008 12:17 PM / 10-Bit, A/D Converter AD571 1.0 2.0 3.0 3.2 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as
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10-Bit,
AD571
MIL-PRF-38534,
com/AD571
MIL-STD-883
ASD0012806
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AD571
Abstract: ad5710 AD571-000C
Text: Friday, Mar 14, 2008 3:52 PM / 10-Bit, A/D Converter AD571 1.0 2.0 3.0 3.2 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as
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10-Bit,
AD571
MIL-PRF-38534,
com/AD571
MIL-STD-883
ASD0012806
AD571
ad5710
AD571-000C
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MMIC Amplifier Micro-X marking 420
Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices
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EHA07485
EHA07486
MWP-25
EHA07487
EHA07488
MWP-35
EHA07489
EHA07490
MMIC Amplifier Micro-X marking 420
x-band microwave fet cfy 14
BFy 90 transistor
guide selection microwave transistors
BFY193
transistor C 5611
transistor "micro-x" "marking" 3
GaAs Amplifier Micro-X
micro-x 420
"Microwave Diodes"
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ic 3524 internal block diagram
Abstract: ic 3524 pin diagram ic 4518 applications ic 3525 internal block diagram magnetic transducers "Hall Effect Sensors" A3056EU UGN3235K A3056LU A3058EU
Text: HALL-EFFECT SENSORS 535 THRU 640 HALL-EFFECT SUBASSEMBLIES The ATS535 through ATS640 series of devices are optimized Hall-effect IC/magnet combinations that provide complex sensing functions in small packages. See page 11 for a complete listing of devices.
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ATS535
ATS640
ATS63x
AH-006-5
ATS612JSB
FH-001
ic 3524 internal block diagram
ic 3524 pin diagram
ic 4518 applications
ic 3525 internal block diagram
magnetic transducers
"Hall Effect Sensors"
A3056EU
UGN3235K
A3056LU
A3058EU
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e-phemt
Abstract: HBT agilent series DC bias of gaas FET GaAs mesfet list
Text: Characteristics of E-pHEMT vs HBTs for PA Applications White Paper Agilent Technologies Semiconductor Products Group Introduction Many different semiconductor technologies are currently being used for power amplifiers PAs that include a mix of Silicon and GaAs devices –
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5988-8574EN
e-phemt
HBT agilent series
DC bias of gaas FET
GaAs mesfet list
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flyback samsung
Abstract: flyback transformer samsung
Text: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the mid-70's, these devices have emerged as widely ac cepted components in medium-to-high frequency power control applications. Advances in Doubled Diffused MOS DMOS
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mid-70
flyback samsung
flyback transformer samsung
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flyback samsung
Abstract: flyback 1000w SMPS 1000W smps design 1000w
Text: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the m id-70’s, these devices have emerged as widely ac cepted components in mediunv-to-high frequency power control applications. Advances in Doubted Diffused MOS DMOS
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id-70
flyback samsung
flyback 1000w
SMPS 1000W
smps design 1000w
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES □ FEATURES 12-Bit Resolution 24-Pin "Skin n y D IP " Package Conversion Time: 500 ns max - AD671J/K/S-500 750 ns max - AD671J/K/S-750 Low Power: 475 m W Unipolar 0 to + 5 V, 0 to +10 V and Bipolar Input Ranges (±5 V) Tw os Complement or Offset Binary Output Data
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12-Bit
AD671
24-Pin
AD671J/K/S-500
AD671J/K/S-750
MIL-STD-883
AD671
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AMD Bipolar PROM programming
Abstract: Kontron MPP80S AM27S20 Bipolar PROM programming kontron mpp Am27S180 tv schematic diagram company SHARP MPP80S DARLINGTON TRANSISTOR ARRAY generic prom programming
Text: Bipolar Generic PROM Series a Advanced Micro Devices R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B I
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163S4
CD00986
AMD Bipolar PROM programming
Kontron MPP80S
AM27S20
Bipolar PROM programming
kontron mpp
Am27S180
tv schematic diagram company SHARP
MPP80S
DARLINGTON TRANSISTOR ARRAY
generic prom programming
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