RECTIFIER DIODE 6A Search Results

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

Contextual Info: US 3A . US 3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Ultrafast silicon rectifier diodes US 3A.US 3M

Contextual Info: S3A . S3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Standard silicon rectifier diodes S3A.S3M  4

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

Contextual Info: SB 320.SB 3100 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Schottky barrier rectifiers diodes SB 320.SB 3100 8  9  1

diode F4 6A

Abstract: diode F4
Contextual Info: GBU 6A . GBU 6M . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 03 Inline bridge Silicon-Bridge Rectifiers >? 4 >? ? >? A >? > >? B >? C

4.7 B2 glass diodes

Abstract: 1N400* series 1N4001 general diode purpose surface mount tic 41
Contextual Info: CONTENTS ALPHA/NUMERIC LISTING OF PART N UM . 3 BRIDGE RECTIFIER AND DIODE . 4

APT06DC60HJ

Contextual Info: APT06DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery

b2545

Abstract: MBRF2545CT
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b1545 motorola

Contextual Info: MOTOROLA Order this document by MBRF1545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF1545CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features

Contextual Info: RURD660S9A_F085 Ultrafast Power Rectifier, 6A 600V Features 6A, 600V Ultrafast Rectifier • High Speed Switching trr=63ns(Typ. @ IF=6A ) The RURD660S9A_F085 is an ultrafast diode with soft recovery characteristics (trr< 83ns). It has a low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is

scr gate driver ic

Contextual Info: SKiiP 25NAB066V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper ,#6   A 61 '&2/  

MBRF1545CT

Contextual Info: MBRF1545CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

b2545

Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

marking LA

Abstract: SB005W03
Contextual Info: Ordering number :EN5229 SB005W03 Shottky Barrier Diode Twin Type • Cathode Common 50V, 6A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1270 [SB005W03] Features · Low forward voltage(VF max=0.55V).

diode F4 6A

Contextual Info: SKD 50 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik %85- %%5 %58 & 2 . 9 0! 2 :6 ;'4 ' 7 %   6 @

D06F150S

Abstract: d06f
Contextual Info: POWER RECTIFIER SDS06F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1,3V at lF=6A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded

Contextual Info: SK 70 GAL 063 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT ./# .2/# $ $9  *+ ,-      

D06F150S

Abstract: SDS06F150S
Contextual Info: SDS06F150S POWER RECTIFIER TO-220F FEATURES * High Voltage and High Reliability * High Speed Switching Trr=135ns * Low VF in Turn on (VF=1.3V at IF=6A) * Suitable for Damper Diode in Horizontal Deflection Circuits 1 2 MECHANICAL CHARACTERISTICS * Case: Epoxi, Molded

Contextual Info: SK 8 BGD 065 E power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter 01* % %7 0&1* $+ ,-./      

A0346

Abstract: SBT15010
Contextual Info: SBT150-10LS Ordering number : ENA0346 SANYO Semiconductors DATA SHEET SBT150-10LS Schottky Barrier Diode Twin Type • Cathode Common 100V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features

GBU 08

Abstract: gbu08 gbu BRIDGE RECTIFIER bridge diode 6A
Contextual Info: Bulletin I2718 rev. E 05/02 6GBU Series 6.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passivated Suitable for Universal hole mounting IO AV = 6A VRRM = 50/ 800V Easy to assemble & install on P.C.B. High Surge Current Capability

Contextual Info: Ordering number : EN2908 SB60-05K Schottky B arrier Diode Twin Type • Cathode Common 50V, 6A Rectifier A p p lic a tio n s • High frequency rectification (switching regulators, converters, choppers) F e a tu re s •Low forward voltage (Vp = 0.55V max)

silicon epitaxial mesa diode

Abstract: 1C5811
Contextual Info: SENSITRON SEMICONDUCTOR 1C5811 TECHNICAL DATA DATASHEET 4217, REV- SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • •