RECTIFIER DIODE 1N Search Results
RECTIFIER DIODE 1N Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 900HM/B |
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900HM - Inverter, DTL |
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| 900HM/2 |
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900HM - Inverter, DTL |
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| MM74C911N |
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74C911 - LED Driver, 8-Segment, CMOS, PDIP28 |
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| MC1911L |
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MC1911 - NOR Gate, DTL, CDIP14 |
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| MC1906F |
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MC1906 - AND Gate, DTL, CDFP14 |
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RECTIFIER DIODE 1N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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diode IN 5062
Abstract: in 5062 silicon rectifier diode
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1E-017
Abstract: diode in 4937
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SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
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SMD4001-4007) SR560 DO-27 UF4004 DO-41 UF4007 10A10 LL4148 FR101-FR107 SR506 Diode diode 6A 1000v SM4007 Diode Diode SR360 diode her307 | |
1N4003CSMContextual Info: mi- ËFFË mi SEME 1N4003CSM LAB MECHANICAL DATA Dimensions in mm inches GENERAL PURPOSE SILICON RECTIFIER DIODE 0.51 ± 0.10 (0.02 ± 0.004) 0.31 ' ( 0.012) rad. i 3 I General Purpose Rectifier Diode |
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1N4003CSM 0Q015Ã 1N4003CSM | |
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Contextual Info: 1N 5400.1N 5408 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Standard silicon rectifier diodes 8 9 1 9 9 -) 1 |
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Contextual Info: 1N 4001.1N 4007, 1N 4007-1300 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter ,2 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 8 9 3 9 9 + |
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BC 567Contextual Info: 1N 5400 K.1N 5408 K power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module -2 Axial lead diode Standard silicon rectifier diodes 9 : 3 : : , 0, 3 : : |
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Contextual Info: Illl SEME 1N4001CSM LAB MECHANICAL DATA GENERAL PURPOSE SILICON RECTIFIER DIODE General Purpose Rectifier Diode In Hermetic Ceramic Surface Mount Package for High Reliability Applications 0.055 a = 1.02 ±0.10 max. (0.04 ± 0.004) SOT23 CERAMIC (CSM) Underside View |
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1N4001CSM | |
diode IN 5399Contextual Info: 1N 5391.1N 5399 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter -2 Axial lead diode Standard silicon rectifier diodes 8 9 3 9 9 , 0, 3 |
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3B75Contextual Info: 1N 5820.1N 5822 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A |
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1N4001CSMContextual Info: mi 1N4001 CSM SEME LAB MECHANICAL DATA GENERAL PURPOSE SILICON RECTIFIER DIODE General Purpose Rectifier Diode In Hermetic Ceramic Surface Mount Package for A= 1.02 ± 0.10 0.04 ± 0.004 1.40 (0.055) max. High Reliability Applications SOT23 CERAMIC (CSM) |
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1N4001CSM 1N4001CSM | |
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Contextual Info: 1N 5817.1N 5819 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A |
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DIODE marking 5baContextual Info: POWER RECTIFIER DIODE 1N5550D3A / 1N5550D3B • VBR = 220V, IF = 5A, Standard Reverse Recovery Rectifier Diode • Light Weight Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B” / “E-MELF” Package† • Switching Power Supply Applications |
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1N5550D3A 1N5550D3B 1N5550D3B-JQRS DIODE marking 5ba | |
D-5B layout
Abstract: LE17 MIL-PRF19500 QR217 8814 "Power rectifier Diode"
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1N5550D3A 1N5550D3B 1N5550D3B-JQRS D-5B layout LE17 MIL-PRF19500 QR217 8814 "Power rectifier Diode" | |
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Contextual Info: 1N 5383B.1N5388B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode |
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5383B. 1N5388B 1N5388B | |
j9 diode
Abstract: j196 h196 5388B Diode 9H J69 DIODE
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5347B. 5388B 5388B j9 diode j196 h196 Diode 9H J69 DIODE | |
K580
Abstract: 5382B i5ij K8/selenium rectifier
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5347B. 5382B 5382B K580 i5ij K8/selenium rectifier | |
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Contextual Info: INI SEME 1N4001CSM LAB GENERAL PURPOSE SILICON RECTIFIER DIODE MECHANICAL DATA Dimensions in mm inches 0.51 ±0.10 (0.02 ± 0.004) (0 .0 1 2 ) rad. « So t °o +' +i u ^6 General Purpose Rectifier Diode J 1.91 ±0.10 (0.075 ±0.004) 3.05 ± 0.13 (0.12 ±0.005) |
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1N4001CSM | |
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Contextual Info: 1N 4448 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4448. |
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150mA LL4448. DO-35 150OC 100uA 100MHz, | |
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Contextual Info: 1N 4151 Small-Signal Diode Fast Switching Rectifier Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data Case: DO-35 Glass Case |
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LL4151. DO-35 150OC 100MHz, | |
1n4148sContextual Info: 1N 4148 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4148, and the |
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150mA LL4148, DO-34 1N4148S. DO-35 150OC 100kHz 100MHz, 100uA 1n4148s | |
2510W
Abstract: RS1M diode
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DO-214AC ABS10 LL4148 MB10S SM4007 MB10M DB101-DB107; DB151-DB157 DB101S-DB107S; 2510W RS1M diode | |
secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
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SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 | |
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Contextual Info: 1N 4454 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics |
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150mA DO-35 100MHz, 100uA | |