RECTIFIER 200V 5A Search Results

RECTIFIER 200V 5A Result Highlights (5)

Part	Manufacturer	Description
CMG03A	Toshiba Electronic Devices & Storage Corporation	General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT
CRG09A	Toshiba Electronic Devices & Storage Corporation	General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT
CRG11B	Toshiba Electronic Devices & Storage Corporation	General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT
CRG10A	Toshiba Electronic Devices & Storage Corporation	General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT
CRG04A	Toshiba Electronic Devices & Storage Corporation	General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT

RECTIFIER 200V 5A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SCDA6 Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415 Contextual Info: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A	Original	1N5415 1N5420 1N5550 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 1N5615, SCDA6 semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F	PDF
HIGH VOLTAGE RECTIFIER Abstract: sf10a200h Contextual Info: SF10A200HPI Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction	Original	SF10A200HPI O-220F-3L SF10A200HPI KSD-D0O010-002 HIGH VOLTAGE RECTIFIER sf10a200h	PDF
sf10a200h Contextual Info: SF10A200HPI Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction	Original	SF10A200HPI O-220F-3L SF10A200HPI KSD-D0O010-002 sf10a200h	PDF
Contextual Info: SF10A200HPR Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common anode rectifier construction	Original	SF10A200HPR O-220F-3L SF10A200HPR KSD-D0O014-001	PDF
SF10A200HPR Abstract: freewheeling diode 5A marking code 1A diode Contextual Info: SF10A200HPR Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common anode rectifier construction	Original	SF10A200HPR O-220F-3L SF10A200HPR KSD-D0O014-001 freewheeling diode 5A marking code 1A diode	PDF
SF10A20 Abstract: SF10A200 Contextual Info: SF10A200HPI Semiconductor Ultrafast Recovery Rectifier 200V, 10A ULTRAFAST DUAL RECTIFIERS Features y Low forward voltage drop and leakage current y Ultrafast reverse recovery time trr<30ns y Low power loss and high efficiency y Dual common cathode rectifier construction	Original	SF10A200HPI O-220F-3L SF10A200HPI KSD-D0O010-001 SF10A20 SF10A200	PDF
NTE5572 Abstract: NTE5574 NTE5570 Contextual Info: NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier for Phase Control Applications Electrical Characteristics: Maximum values @ TJ = +125°C unless otherwise specified Repetitive Peak Voltages, VDRM & VRRM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE5570, NTE5572, NTE5574 NTE5570 NTE5572 NTE5572 NTE5574 NTE5570	PDF
SHD374651 Abstract: VF10 VF11 VF12 VF13 Contextual Info: SENSITRON SEMICONDUCTOR SHD374651 TECHNICAL DATA DATA SHEET 5160, REV. - LOW DROP SILICON RECTIFIER DESCRIPTION: 200V 50A Hermetic low drop rectifier in a SHD-3 HP package. Features: • • • • Designed for Battery Cell Bypass application Low package inductance	Original	SHD374651 SHD374651 VF10 VF11 VF12 VF13	PDF
nte5570 Abstract: NTE5572 NTE5574 500v 50a scr 50A 1200V SCR SCR Gate Drive Contextual Info: NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier SCR 125 Amp, TO94 Electrical Characteristics: (Maximum values @ TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRRM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE5570, NTE5572, NTE5574 NTE5570 NTE5572 nte5570 NTE5572 NTE5574 500v 50a scr 50A 1200V SCR SCR Gate Drive	PDF
Contextual Info: International rag Rectifier 4Ô55452 I NR PD-9.351F IRF9620 INTERNATIONAL HEXFET Power MOSFET • • • • • DG14fl7fl 5 ^ 0 • RECTIFIER Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements bSE D VDSS = -200V	OCR Scan	IRF9620 DG14fl7fl -200V	PDF
SS510 Abstract: 1S1886A DO-15 BLUE CATHODE Contextual Info: 1S1886A TOSHIBA 1S1886A TOSHIBA RECTIFIER SILICON DIFFUSED TYPE GENERAL PURPOSE RECTIFIER APPLICATIONS • • • Average Forward Current : If a v = 1.2A (Ta = 60°C) Repetitive Peak Reverse Voltage : V r r m = 200V Peak One Cycle Surge Forward Current (Non Repetitive)	OCR Scan	1S1886A DO-15 SC-39 SS510 1S1886A DO-15 BLUE CATHODE	PDF
Contextual Info: SEMICONDUCTOR F1B2CCI/CAI TECHNICAL DATA STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. A C S P Average Output Rectified Current : IO=10A Tc=101 . Repetitive Peak Reverse Voltage : VRRM=200V. B E G Rectifier Stack of Single Phase Center Tap Type.	Original		PDF
Contextual Info: SEMICONDUCTOR F1B2CCI/CAI TECHNICAL DATA STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. A Average Output Rectified Current : IO=10A Tc=101 . C P S Repetitive Peak Reverse Voltage : VRRM=200V. B E G Rectifier Stack of Single Phase Center Tap Type.	Original		PDF
F1B2CAI Abstract: F1B2CCI FIB2CAI Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO-LTD F1B2CCI/CAI STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. FEATURES • Average Output Rectified Current : Io=10A Tc=101°C . • Repetitive Peak Reverse Voltage : V rrm=200V. • Rectifier Stack of Single Phase Center Tap Type.	OCR Scan	ELECTRIC04 F1B2CAI F1B2CCI FIB2CAI	PDF

10C2 Abstract: 5DLZ47 5DLZ47A Contextual Info: TO SHIBA 5DLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5DLZ47A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 43.2 ± 0.2 10.3MAX. V = 200V Repetitive Peak Reverse Voltage Average Output Rectified Current I0 = 5A	OCR Scan	5DLZ47A 10C2 5DLZ47 5DLZ47A	PDF
SBR100-20LS Abstract: A11423 22yp Contextual Info: SBR100-20LS Ordering number : ENA1142 SANYO Semiconductors DATA SHEET SBR100-20LS Schottky Barrier Diode Twin Type • Cathode Common 200V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features	Original	SBR100-20LS ENA1142 A1142-3/3 SBR100-20LS A11423 22yp	PDF
1S1886A Contextual Info: 1S1886A TO SH IBA 1S1886A TOSHIBA RECTIFIER SILICON DIFFUSED TYPE Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS • • • Average Forward Current : Ip AV = 1.2A (Ta = 60°C) Repetitive Peak Reverse Voltage : V r r m = 200V Peak One Cycle Surge Forward Current (Non Repetitive)	OCR Scan	1S1886A 1S1886A	PDF
F1B2CA Contextual Info: SEMICONDUCTOR F1B2CC/CA TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. FEATURES • A verage Output Rectified Current : Io=10A Tc=108°C . • Repetitive Peak Reverse Voltage : Vrrm=200V. • Rectifier Stack of Single Phase Center Tap Type.	OCR Scan		PDF
NTE5567 Abstract: NTE5569 NTE5571 NTE5568 Contextual Info: NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier SCR for Phase Control Applications Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Forward and Reverse Voltage, VDRM, VRRM NTE5567 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE5567, NTE5568, NTE5569, NTE5571 NTE5567 NTE5568 NTE5569 NTE5567 NTE5569 NTE5571 NTE5568	PDF
Contextual Info: TP901C2 5A ( 200V / 5A ) LOW LOSS SUPER HIGH SPEED RECTIFIER Features Outline drawings, mm JEDEC EIAJ Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 Maximum ratings and characteristics	Original	TP901C2	PDF
Contextual Info: TOSHIBA 5DLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5DLZ47A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 10.3 M A X. V = 200V Repetitive Peak Reverse Voltage I0 = 5A Average Output Rectified Current	OCR Scan	5DLZ47A	PDF
5DLZ47A Contextual Info: 5DLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5DLZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 200V l Average Forward Current : IF AV = 5A l Ultra Fast Reverse-Recovery Time	Original	5DLZ47A 5DLZ47A	PDF
Contextual Info: TP901C2 5A ( 200V / 5A ) LOW LOSS SUPER HIGH SPEED RECTIFIER Features Outline drawings, mm JEDEC EIAJ Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics	Original	TP901C2	PDF
Contextual Info: TP901C2 5A ( 200V / 5A ) LOW LOSS SUPER HIGH SPEED RECTIFIER Features Outline drawings, mm JEDEC EIAJ Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics	Original	TP901C2	PDF

RECTIFIER 200V 5A Search Results

RECTIFIER 200V 5A Result Highlights (5)

RECTIFIER 200V 5A Datasheets Context Search

SCDA6

HIGH VOLTAGE RECTIFIER

sf10a200h

SF10A200HPR

SF10A20

NTE5572

SHD374651

nte5570

SS510

F1B2CAI

10C2

SBR100-20LS

1S1886A

F1B2CA

NTE5567

5DLZ47A