Ba 33 bco
Abstract: No abstract text available
Text: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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32/36-M
x16/18x8d)
/36-M
600MHz
Ba 33 bco
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Untitled
Abstract: No abstract text available
Text: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted
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E2G1059-18-74
16M/18Mb
MSM5716C50/M
5718C50/
D5764802
/64-M
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Untitled
Abstract: No abstract text available
Text: MR16R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.
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MR16R0824
MR16R082C
8Mx16
K4R271669A-NCK8/NCK7/NCG6)
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K4R571669A-FCK8
Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9
Text: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary
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K4R571669A/K4R881869A
256/288Mbit
16/18bit
1066MHz
260mV
300mV
800MHz
1066MHz
256/288Mb)
K4R571669A-FCK8
K4R881869A-FCK8
K4R881869A-FCM8
K4R881869A-FCM9
K4R881869A-FCN9
K4R881869A-FCT9
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K4R271669F
Abstract: No abstract text available
Text: Direct RDRAM K4R271669F 128Mbit RDRAM F-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R271669F Change History Version 1.4 ( September 2003 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R271669F
128Mbit
K4R271669F
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K4R271669E
Abstract: No abstract text available
Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R271669E
128Mbit
K4R271669E
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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K4R271669E-RcCS8
Abstract: K4R271669E
Text: Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R271669E
128Mbit
K4R271669E-RcCS8
K4R271669E
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HYR1612820G-653
Abstract: HYR1612820G-745 HYR1612820G-840 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 INFINEON, B20 A17 INFINEON marking a86
Text: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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16xx20G/HYR
18xx20G
HYR1612820G-653
HYR1612820G-745
HYR1612820G-840
HYR1612820G-845
HYR1812820G-653
HYR1812820G-745
HYR1812820G-845
INFINEON, B20
A17 INFINEON
marking a86
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hyundai rdram
Abstract: REF05
Text: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and
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HYRDU64164
HYRDU72184
64/72Mbit
600MHz
800MHz
Mar98
hyundai rdram
REF05
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HR128E08B
Abstract: HR128E08C HR128E08D HR128E08E HR128N08C HR128N08D HR128N08E
Text: 128 MB RIMMTM Module with 128/144Mb RDRAMs Direct Rambus RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and nonECC modules.
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128/144Mb
128Mb
144Mb
HR128N08E
HR128N08D
HR128N08C
HR128N08B
HR128E08E
HR128E08D
HR128E08C
HR128E08B
HR128E08C
HR128E08D
HR128E08E
HR128N08C
HR128N08D
HR128N08E
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da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059-00
da53
HY5R128HC745
HY5R128HC840
HY5R128HC845
HY5R144HC653
HY5R144HC745
HY5R144HC840
HY5R144HC845
HY5R144HM745
HY5R144HM845
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144MB
Abstract: B641 High Connection Density
Text: 64MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and
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128Mb
144Mb
HS064N04E
HS064N04D
HS064N04C
HS064N04B
HS064E04E
HS064E04D
HS064E04C
HS064E04B
144MB
B641
High Connection Density
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da53
Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where
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PD488385
da53
uPD488385FB-C60-53-BF1
uPD488385FB-C80-40-BF1
uPD488385FB-C80-45-BF1
uPD488385FB-C80-50-BF1
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SCK 183
Abstract: 128Mx16
Text: UG7128R16 8 16U6J(7J) Data sheets can be downloaded at www.unigen.com 256M Bytes (128M x 16/18 bits) RAMBUS RIMM MODULE 184 Pin RIMM based on 16 pcs 8M x 16/18 RDRAM & 4K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)
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UG7128R16
16U6J
18bits
800MHz
600MHz
184-Pin
256MB
SCK 183
128Mx16
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Untitled
Abstract: No abstract text available
Text: TOSHIBA cIOti7 2 4 a 0 0 2 ô b fl2 131 TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description TheTC59R1809VK/HK Rambus Dynamic RAM RDRAM is a next-generation high-speed CMOS DRAM with a 2,097,152 x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data
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TC59R1809VK/HK
TheTC59R1809VK/HK
500MB/S.
TC59R1809VK/HK
32-pin
RD18011195
SVP32-P-1125A)
SHP36-P-1125)
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Untitled
Abstract: No abstract text available
Text: • TOSHIBA TOTTEMfl G G S S Q S D MbM ■ TOSE TC59R1609VK TOSHIBA L06 IC/MFM0RY bSE » SILICON GATE CMOS 18 Mbit RDRAM t a r g e t DESCRIPTION The TC59R1609VK is a new generation ultra high speed CMOS Rambus™ DRAM organized as 2MX9. The TC59R1609VK uses advanced circuit design techniques with standard CMOS process technology. It
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TC59R1609VK
TC59R1609VK
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direct rdram rambus 1200
Abstract: No abstract text available
Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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600MHz
DL-0118-07
direct rdram rambus 1200
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da53
Abstract: DB26 0195c Outline T39
Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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512Kx16/18x32s)
600MHz
DL-0118-010
da53
DB26
0195c
Outline T39
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PDF
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da53
Abstract: DB26
Text: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any
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8Mx16/18x4i)
DL0117-010
da53
DB26
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,
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TC59R7218XB
72-Mbit
600MHz
800MHz
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PDF
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ibm rdram
Abstract: No abstract text available
Text: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Datasheet Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses
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128Mb
300MHz
400MHz
-60Fj
ibm rdram
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PDF
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DA30F
Abstract: TFR 600M
Text: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses
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128Mb
300MHz
400MHz
DA30F
TFR 600M
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PDF
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RDRAM Clock
Abstract: RR15
Text: Direct RDRAM 64/72-Mbit 256Kx16/18x16d SIEM EN S O I ADVANCE INFORMATION Overview n Uses R am bus Signaling Level (RSL) for up to 800MHz operation Preliminary Data The R am bus Direct RDRAM™ is a general p u rp o se high-perform ance m em ory device suitable for u se in a
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64/72-Mbit
256Kx16/18x16d)
800MHz
/72-Mbit
600MHz
RDRAM Clock
RR15
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