RD 24 105 RF Search Results

Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier, QFN CMM1100-QF November 2007 - Rev 02-Nov-07 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package 100% RF, DC, and Noise Figure Testing

CMM1100-QF

Abstract: CMM1100-QF-0N00 CMM1100-QF-0N0T CMM1110-QF vsat
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier, QFN CMM1100-QF August 2008 - Rev 16-Aug-08 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package 100% RF, DC, and Noise Figure Testing

CMM1100-QF

Abstract: CMM1100-QF-0N00 CMM1100-QF-0N0T
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier, QFN CMM1100-QF August 2009 - Rev 29-Aug-09 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package 100% RF, DC, and Noise Figure Testing

CMM1100-QF

Abstract: CMM1100-QF-0N00 CMM1100-QF-0N0T CMM1100-QF-EV1 C3029
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier, QFN CMM1100-QF November 2007 - Rev 02-Nov-07 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package 100% RF, DC, and Noise Figure Testing

one chip 9381

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier July 2008 - Rev 14-Jul-08 D1004-BD Features Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06 D1004-BD Features Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

mmic distributed amplifier

Abstract: 22DSBA0423 DM6030HK TS3332LD XD1004-BD XD1004-BD-000V XD1004-BD-EV1 one chip 9381
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06 D1004-BD Features Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

B1007-QT

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT June 2007 - Rev 06-Jun-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% RF, DC and Output Power Testing

Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

OC 74 germanium transistor

Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

D1005

Abstract: 22DSBA0423 DM6030HK TS3332LD XD1005-BD XD1005-BD-000V XD1005-BD-EV1
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier July 2008 - Rev 14-Jul-08 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

PT1000 CONVERSION TABLE

Abstract: ER 2510 type bobbin RG-9B/U cable 2j 183j a431 csp 1040 39p SMD MARKING CODE 19l RG-180 connector 685 35K 222M SE SMD marking code BR24
Contextual Info: Table of Contents RF Inductors Surface Mount Radial Leaded Series EMI Series 4221 Series 4222 Series 8454 Series SMB 2.5 107 108 109 110 111 112 113 114 115 Surface Mount Series P1330 Series P1812 Series 2512 Series 3483 Series S3483 Series SDS130 Series SDS680

Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

TCW 060

Contextual Info: * IN D µ UCT H A ±1 NC 0% E Q MI NI MU M TE ST FR EQ UE SR NC F Y MI (M NI Hz MU DC ) M ( R MH MA ES z) XI IST MU A CU M NCE (O R HM MA RE S XI NT MU R ) AT IN M C ( IN CU REM mA) G E RR N EN TA T L (m A) Molded Shielded RF Coils DA SH NU MB ER * 4307R

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier B1007-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

SCL 8018

Abstract: DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1 transistor 7809
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

B1007

Abstract: DM6030HK TS3332LD XB1007-BD XB1007-BD-000V XB1007-BD-EV1
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier B1007-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

transistor smd qe

Abstract: P1020 15MPA0566 CMM1118-QT XP1020-QE XP1020-QE-0N00 XP1020-QE-EV1 XU1005-QD
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN P1020-QE January 2007 - Rev 26-Jan-07 Features 17.0 dB Small Signal Gain +27.0 dBm Saturated Output Power SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband’s two stage 11.0-19.0 GHz GaAs

Contextual Info: 37.0-42.0 GHz GaAs MMIC Power Amplifier P1018-BD February 2007 - Rev 01-Feb-07 Features Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

XP1018-BD-EV1

Abstract: DM6030HK TS3332LD XP1018 XP1018-BD XP1018-BD-000X XU1004
Contextual Info: 37.0-42.0 GHz GaAs MMIC Power Amplifier P1018-BD February 2007 - Rev 01-Feb-07 Features Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

XP1018-BD

Abstract: DM6030HK TS3332LD XP1018 XP1018-BD-000X XP1018-BD-EV1 XU1004
Contextual Info: 37.0-42.0 GHz GaAs MMIC Power Amplifier P1018-BD February 2007 - Rev 01-Feb-07 Features Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2009 - Rev 15-Feb-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing