csr LPT 2 SPI
Abstract: smd marking n3 smd transistor marking sp1 smd diode marking cr30 opamp 741 775 cpu connector 7flite09y0b6 7flite09y0m6 TRANSISTOR SMD MARKING CODE w2 7flit
Text: ST7LITE0 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI • ■ ■ ■ ■ Memories – 1.5K bytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application Programming ICP and IAP . 10K write/erase cycles
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RC snubber ac motor
Abstract: 121B MSK121-1 MSK121-10 MSK121-2 MSK121-5
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 121 DUAL HIGH POWER BRIDGE AMPLIFIER SERIES 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 QUALIFIED FEATURES: Ultra Low Cost/Minimal External Components Required Complete Bridge/Dual Phase Output Configuration Up to 60 Watts
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MIL-PRF-38534
600KHz
MSK121B-2
MSK121-5
MSK121B-5
MSK121-10
MSK121B-10
Mil-PRF-38534
RC snubber ac motor
121B
MSK121-1
MSK121-10
MSK121-2
MSK121-5
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cn/A/U 237 BG
Abstract: No abstract text available
Text: P4SMA6V8. P4SMA300A P4SMA6V8C. P4SMA220C 400 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMA/DO-214AC Voltage 6.8 to 300 V Power 400 W/ms 5.1 ± 0.3 1.25 ± 0.25 • Glass passivated junction
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P4SMA300A
P4SMA220C
SMA/DO-214AC
EIA-RS-481)
Electrical82
cn/A/U 237 BG
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bq 738
Abstract: Bq 737
Text: P4SMA6V8. P4SMA220A P4SMA6V8C. P4SMA220C 400 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMA/DO-214AC Voltage 6.8 to 220 V Power 400 W/ms 5.1 ± 0.3 1.25 ± 0.25 • Glass passivated junction
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P4SMA220A
P4SMA220C
SMA/DO-214AC
EIA-RS-481)
bq 738
Bq 737
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diode sy 171
Abstract: sy 171 diode 344 BT marking code SJ P4SMA10 P4SMA10A P4SMA11 P4SMA11A P4SMA12 P4SMA12A
Text: P4SMA6V8. P4SMA220A P4SMA6V8C. P4SMA220C 400 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMA/DO-214AC Voltage 6.8 to 220 V Power 400 W/ms 5.1 ± 0.3 1.25 ± 0.25 • Glass passivated junction
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P4SMA220A
P4SMA220C
SMA/DO-214AC
EIA-RS-481)
diode sy 171
sy 171
diode 344 BT
marking code SJ
P4SMA10
P4SMA10A
P4SMA11
P4SMA11A
P4SMA12
P4SMA12A
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bq 738
Abstract: Bq 737 cn/A/U 237 BG
Text: P4SMA6V8. P4SMA440A P4SMA6V8C. P4SMA220C 400 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. Voltage 6.8 to 300 V CASE: SMA/DO-214AC Power 400 W/ms R Glass passivated junction
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P4SMA440A
P4SMA220C
SMA/DO-214AC
EIA-RS-481)
bq 738
Bq 737
cn/A/U 237 BG
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cn/A/U 237 BG
Abstract: No abstract text available
Text: P4SMA6V8. P4SMA440A P4SMA6V8C. P4SMA220C 400 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMA/DO-214AC Power 400 W/ms R 1.05±0.2 1.25±0.25 • Glass passivated junction • Typical IRM less than 1µA above 10V
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P4SMA440A
P4SMA220C
SMA/DO-214AC
cn/A/U 237 BG
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varistor 332
Abstract: 094.71 varistor 222 ac 1W red led 94.54.1 09471 varistor 222 A2146 A113 A214
Text: 94 Series - Sockets and accessories for 55 series relays Relay type 55.32 Colour BLUE BLACK BLUE 55.33 BLACK BLUE BLACK Screw terminal socket: panel or 35 mm rail EN 50022 mount retaining clip 094.71 supplied with socket packaging code SMA 94.72 94.72.0 94.73
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STM32L1xx
Abstract: STM32L15XCX RM0038 marking code stmicroelectronics stm32 STM32L151C STM32L151C6 STM32L151RB STM32L15x manual STM32 touch sensing STM32L15xxx Flash programming manual
Text: STM32L15xx6/8/B Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC Datasheet − production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40°C to 85°C/105°C temperature range
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STM32L15xx6/8/B
32-bit
128KB
C/105
STM32L1xx
STM32L15XCX
RM0038
marking code stmicroelectronics stm32
STM32L151C
STM32L151C6
STM32L151RB
STM32L15x
manual STM32 touch sensing
STM32L15xxx Flash programming manual
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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tableau des boitiers cms
Abstract: circuit integre CNR 14 V 471 K CONDENSATEUR 0603 X7R varistance smd marquage COMPOSANT SMD 1206 cms diode IC Ensemble condensateur ceramique 104
Text: CONDENSATEURS SPECIFIQUES SPECIAL CAPACITORS SOMMAIRE SUMMARY Feuille particulière sur les chips céramique faible inductance classe 1 et 2 p. 127 Low inductance ceramic chip capacitors class 1 and 2 data sheets p. 127 Feuille particulière sur les chips céramique faible épaisseur
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varistor 222 ac
Abstract: varistor 222 A214 A113 94340 9901-0024 9901-0024-50 9901-0060 9901-0230 9901-0230-50
Text: 94 Series - Sockets and accessories for 55 series relays Relay type 55.32 Colour BLUE BLACK BLUE 55.33 BLACK BLUE BLACK Clamp terminal socket: panel or 35 mm rail EN 50022 mount retaining clip 094.01 supplied with socket packaging code SPA 94.02 94.02.0 94.03
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smd 1f
Abstract: No abstract text available
Text: Schottky Barrier Diodes High frequency rectifying Absolute Maximum Ratings Type No. ★SF20H1R5 ★SF30H1R5 V rm lo [V] [A] rc] 15 15 20 30 1 46*1 D1NS4 40 6 M1FP3 60 30 1.29 M1FS4 40 1.33 6 D1FS4 60 1.2 40 6 60 1.1 Electrical Characteristics Ifsm Tstg Tj
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SF20H1R5
SF30H1R5
DE10S3L
DE10P3
ITO-220
O-220
FTO-220
AX057)
smd 1f
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tic 47
Abstract: No abstract text available
Text: Rectifier Diodes Low frequency rectifying 3 Phase Bridge Diode Modules A b s o lu te M a x im u m E le c tric a l C h a ra c te ris tic s Tj m a x Conditions (m a x ) (m a x ) If Vr= V rm [A ] rc] rc] [V ] [A ] [M ] [°C/W ] P ackage Fig. -4 0 -1 5 0 150
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S15VT60
D30VC
D15VD
D30V06Ö
tic 47
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F10SC
Abstract: 3fs6
Text: Surface-M ount Devices E-pack Schottky Barrier Diodes Single A b solute M axim um Ratings V rm lo [V ] [A ] I fsm Tstg Tj (m ax) Conditions (m ax) If V r ~ V rm [A ] PC] [°C ] [V ] [A ] [m A ] 40 40 6 60 51« 2 5*2 D2FS4 40 1.6 3 4 *2 6 60 1.5 3 1 *2 3
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E10SC
F10SC
DF15SC
DF20SC
DF25SC
F30SC
F40SC
3fs6
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Untitled
Abstract: No abstract text available
Text: R e ctifie r D iodes 3 Phase Bridge Diode M odules Absolute Maximum Ratings Part No. lo V rm Conditions If s m Electrical Characteristics Tstg |R ejc max Conditions (max) (max) IF V r= V rm [V] [A] [ mA ] Vf Tj Tc [V] S10VT60 600 80 800 S10VTA60 600 80 800
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S10VT60
S10VTA60
S15VT60
S15VTA60
S20VT60
S20VTA60
S30VT60
S30VTA60
D30VTA1600
D30VTA160
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adc0n1
Abstract: No abstract text available
Text: PICI 6C9XX 12.0 ANALOG-TO-DIGITAL CONVERTER A/D MODULE The A/D module has three registers. These registers are: • A/D Result Register (ADRES) This section applies to the PIC16C924 only. • AID Control Register 0 (ADCONO) • A/D Control Register 1 (ADCON1)
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PIC16C924
AN546
DS30444E
adc0n1
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Untitled
Abstract: No abstract text available
Text: ISO 9001 CERTIFIED BY DESC 121 DUAL HIGH POWER BRIDGE AMPLIFIER SERIES M.S.KENNEDY CORP. 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 MIL -PRF-38534 QUALIFIED FEATURES: • • • • • • • Ultra Low Cost/Minimal External Components Required
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-PRF-38534
600KHz
MSK121B-2
SK121B-5
SK121B-10
Mil-PRF-38534
S13M3QD
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Untitled
Abstract: No abstract text available
Text: r i ï ' M •; >lW i l i t i l l l -7 ’Æ i Æ 'M -i* . 121 DUAL H IG H POW ER BRIDGE A M P L IF IE R SERIES IVI S K I N N l i Y c o i n * 8 1 7 0 Thompson Road Cicero, N.Y. 1 3 0 3 9 MIL-STD-1772 CERTIFIED FEATURES: • • • • • • • 316) 699-9201
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800KHz
MIL-STD-1772
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GUNN DIODE
Abstract: 10 GHz gunn diode gunn diodes Diode jx4 NJX4404 X-Band Motion Detector Gunn Diode e band gunn diode oscillator gunn effect diode case
Text: ne:id JAPAN RADI O M5E D CO LTD WM b5bclfla3 0001180 ObS « N J R C MEDIUM POW ER GUNN DIODES p R C l — I ii " " P O I-M N J X400 2 4403 4404 • Description NJX4402, 4403, 4404 are medium power G unn diodes designed for in X -band cw oscillators. These G unn diodes util
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NJX4002/4403/4404
NJX4402,
100-C
NJX4402
GUNN DIODE
10 GHz gunn diode
gunn diodes
Diode jx4
NJX4404
X-Band Motion Detector
Gunn Diode e band
gunn diode oscillator
gunn effect
diode case
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IN3826A
Abstract: IN3827A IN3826 AC POWER ZENERS 6 WATT zener diode WL 1N3821 1N3821A 1N3822 1N3822A 1N3823
Text: 1N3821 thiru 1N3830A Mierosemi Corp. SILICON 1 WATT ZEN ER DIODES FEATURES • ZENER VO LTAGE RANGE: 3.3V to 7.5V • 1N3821A-1N3828A HAVE JAN , JA N TX and JA N TXV Q UALIFICATIO N S TO MIL-S-195Ü0/115 ‘MAXIMUM RATINGS Junction and Storage T em peratures: - -6 5 °C to + 1 7 5 °C
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1N3821
1N3830A
1N3821A-1N3828A
MIL-S-195130/1
1N3821d
375-inches
IN3826A
IN3827A
IN3826
AC POWER ZENERS 6 WATT
zener diode WL
1N3821A
1N3822
1N3822A
1N3823
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Untitled
Abstract: No abstract text available
Text: HAIE t SURFACE MOUNT ZENER DIODES 1 WATT ZEN ER DIODES/MELF DL-41 Nominal :i :;D^Vioe|. 5si- ;• Type Voltage Vz IZT Maximum Zener Impedance: , : Test ; Current ; ; Volts* OPERATING/STORAGE TEMPERATURE RANGE -65°C to +20 rC ■Maximum i Maximum Reverse
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DL-41
ZMU100
ZMU120
ZMU150
ZMU180
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60sc6mt
Abstract: S60SC6MT diode code ae diode marking code h6 marking code u8 U8 marking
Text: Schottky Barrier Diode Twin Diode OUTLINE S60SC6MT Unit : mm Weight 52g Typ Package I MTO-3PT o v l-ü ii(M ) 60V 60A Feature • T j= i5 (rc • Tj=150°C • P r r s m P K t? • P rr sm R ating • Small 8 jc • High lo Rating • 9 jCÖtyJvSU' 'sanûo
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S60SC6MT
15ffC
60SC6MT
J533-1
60sc6mt
S60SC6MT
diode code ae
diode marking code h6
marking code u8
U8 marking
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TL31
Abstract: lta 301
Text: OPTEK TECHNOLOGY INC ObE D | t ^ ä s ö o a o o a i s a s | O p to e le c tro n ic s D iv is io n T -m T R W Electronic Components Group - 7# ? v V iä Product Bulletin 5066 Ja nu ary 1985 G a AIA s Plastic Infrared Em itting Diodes Types 0P260SL, OP26QSLC, QP260SLB, OP26QSLA
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0P260SL,
OP26QSLC,
QP260SLB,
OP26QSLA
DMEN90NS
5-08J
TL31
lta 301
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