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    RBV 402 Search Results

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    RBV 402 Price and Stock

    Crystek Corporation CRBV33CL-0204-0206

    VCO Oscillators
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CRBV33CL-0204-0206
    • 1 $122.29
    • 10 $105.61
    • 100 $94.5
    • 1000 $94.5
    • 10000 $94.5
    Get Quote

    Crystek Corporation CRBV55CW-0140-0250

    VCO Oscillators
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CRBV55CW-0140-0250
    • 1 $122.29
    • 10 $105.61
    • 100 $94.5
    • 1000 $94.5
    • 10000 $94.5
    Get Quote

    RBV 402 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RBV-402 Allegro MicroSystems DIODE RECTIFIER BRIDGE SINGLE 200V 4A 4RBV Original PDF
    RBV402 EIC Semiconductor SILICON BRIDGE RECTIFIERS Original PDF
    RBV402 Galaxy Semi-Conductor Holdings SILICON BRIDGE RECTIFIERS Original PDF
    RBV-402 Sanken Electric Rectifier Diodes Original PDF
    RBV-402 Sanken Electric Silicon Diodes / Silicon Varistors Original PDF
    RBV-402 Sanken Electric Bridge Diodes Original PDF
    RBV-402 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    RBV402G Leshan Radio Company 4.0A BRIDGE RECTIFIERS Original PDF
    RBV-402L Allegro MicroSystems DIODE RECTIFIER BRIDGE SINGLE 200V 4A 4SIP Original PDF
    RBV-402L Sanken Electric Silicon Diodes / Silicon Varistors Original PDF
    RBV-402L Sanken Electric Ultra-Fast-Recovery Rectifier Diodes Original PDF
    RBV-402L Sanken Electric Bridge Diodes (Ultra-Fast-Recovery) Original PDF

    RBV 402 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rbv-406m

    Abstract: RBV406H RBV 402 RBV-401 RBV-406 RBV-402 RBV-404 RBV-406H RBV-408 RBV-40C
    Text: Bridge Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. * RBV-401 100 RBV-402 200 RBV-404 400 RBV-406 600 RBV-408 800 RBV-40C 1000 I F (AV) (A) Tj (ºC) Tstg (ºC) 50Hz Half-cycle Sinewave Single Shot With Heatsink


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    PDF RBV-401 RBV-406H RBV-406M RBV-40C RBV-408 RBV-406 RBV-404 RBV-402 RBV-401, rbv-406m RBV406H RBV 402 RBV-401 RBV-406 RBV-402 RBV-404 RBV-406H RBV-408 RBV-40C

    Untitled

    Abstract: No abstract text available
    Text: Bridge Diodes Electrical Characteristics(Ta=25℃) Absolute Maximum Ratings Parameter VRM (V) Type No. RBV-401 100 RBV-402 200 RBV-404 400 RBV-406 600 RBV-408 800 RBV-40C 1000 RBV-406M 600 ※ RBV-406H 600 IFSM (A) I F( AV) (A) Tj (℃)


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    PDF Tj100 RBV401 RBV402 RBV404 RBV406 RBV408 RBV40C RBV406M RBV406H

    rvb 602

    Abstract: RBV-602 FMM26S FMM-26S FMM36S FMM-36S FMM22S rvb 406m RBV-406M FMM34S
    Text: 4-1 Rectifier Diodes 4-1-2 2 Chip Part No. FMM-31S, R FMM-22S, R 4-1-3 VRM IF IFSM V (A) (A) 100 20 120 FM80 2 RBV-401 10 100 TO-220F 1 RBV-601 20 120 FM80 2 RBV-402 10 100 TO-220F 1 RBV-602 20 120 FM80 2 RBV-4102 10 100 TO-220F 1 RBV-404 20 120 FM80 2 RBV-604


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    PDF FMM-31S, FMM-22S, FMM-32S, FMM-24S, FMM-34S, FMM-26S, FMM-36S, O-220F rvb 602 RBV-602 FMM26S FMM-26S FMM36S FMM-36S FMM22S rvb 406m RBV-406M FMM34S

    Untitled

    Abstract: No abstract text available
    Text: 4-3 Ultra-Fast Recovery Rectifier Diodes 4-3-3 Bridge trrq : IR=IF 90% Recovery Point trrw : IR=2xIF Part No. RBV-402L IF IFSM trrq trrw V (A) (A) (nS) (nS) 4.0 80 40 30 RBV-40 1 6.0 100 50 35 RBV-60 2 200 RBV-602L 75% Recovery Point VRM Package Fig. No.


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    PDF RBV-40 RBV-60 RBV-402L RBV-602L RBV-40) RBV-60)

    RBV-602L

    Abstract: ultra bridge 402L RBV-402L RBV-602L SANKEN
    Text: Bridge Diodes Ultra-Fast-Recovery Electrical Characteristics (Ta = 25°C) Absolute Maximum Ratings Parameter VRM (V) Type No. I F (AV) (A) IFSM (A) With Heatsink 50Hz Half-cycle Sinewave Single Shot 4.0 80 RBV-402L Tj (°C) 200 Tstg (°C) VF (V) max per


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    PDF RBV-402L RBV-602L UL94V-0 RBV-602L ultra bridge 402L RBV-402L RBV-602L SANKEN

    RBV-404 bridge rectifier

    Abstract: RBV4005 RBV410 RBV-406
    Text: BL GALAXY ELECTRICAL RBV4005 - - - RBV410 VOLTAGE RANGE: 50 - 1000 V CURRENT: 4.0 A SILICON BRIDGE RECTIFIERS KBJ4 FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 80 amperes peak


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    PDF RBV4005 RBV410 RBV-404 bridge rectifier RBV410 RBV-406

    RBV408

    Abstract: RBV-406
    Text: RBV4005-RBV410 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 4.0 A KBJ4 Features 4.7± 0.2 Ideal for printed circuit board 25± 0.3 φ 3.2± 9.5± 0.2 15± 0.3 plastic technique 0.15 4.6± 0.15 3.7± 0.2 Reliable low cost construction utilizing molded


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    PDF RBV4005-RBV410 RBV408 RBV-406

    Untitled

    Abstract: No abstract text available
    Text: 5-1. Rectifier Diodes Surface Mount Type Ta = 25°C Absolute Maximum Ratings Type No. VRM IF (AV) I FSM (V) (A) (A) (°C) SFPM-52 200 -54 400 SFPM-62 200 0.9 VF Tstg Tj Condition -64 (V) IF ( µA) (A) max No. 1.0 10 1 (Ta = 25°C) I F (AV) I FSM (V) (A)


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    PDF SFPM-52 SFPM-62 AM01Z EM01Z -606H -1506S

    AXP 223

    Abstract: 000D 21068 EV45 21164a Alpha 21164PC
    Text: Alpha Architecture Handbook Order Number EC–QD2KB–TE Revision/Update Information: This is Version 3 of the Alpha Architecture Handbook. The changes and additions in this book are subsequent to the Alpha AXP Architecture Reference Manual, Second Edition, and the Alpha AXP Architecture Handbook, Version 2.


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    PDF

    FMLG12

    Abstract: FML-G12 DIODE FMLG12 diode MARKING CODE M1 Marking code 6H rk44 diode diode MARKING CODE mo 6H MARKING diode marking EM01 7D05
    Text: Marking Guide Note: hight-voltage rectifier diodes shall have different specifications. 6 TO-3PF, FM80 Type 1 Axial A0 ➀Part Number (abbreviation) M A 9 D ➃ ➀ ➁ ➂ The AM01 is indicated as “M.” ➁Class Z: 200V None: 400V A: 600V B: 800V C: 1000V


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    PDF FML-32S FMU12S FMLG12 FML-G12S FML-G12. FMLG12 FML-G12 DIODE FMLG12 diode MARKING CODE M1 Marking code 6H rk44 diode diode MARKING CODE mo 6H MARKING diode marking EM01 7D05

    DIODE FMLG12

    Abstract: No abstract text available
    Text: Marking Guide Note: hight-voltage rectifier diodes shall have different specifications. 6 TO3P Type 1 Small TMD ➀Type No. abbreviation M A 9 D ➃ ➀ ➁ ➂ The AM01 Type No. is indicated as “M.” ➁Class Z: 200V None: 400V A: 600V B: 800V C: 1000V


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    PDF EU02A CTB-34M FML-G12S FML-G12. FMLG12 DIODE FMLG12

    SVC 561-10

    Abstract: AXP 192 AXP 223 000D 161A-2 161A3 FBRX
    Text: Alpha AXP Architecture Handbook Order Number EC–QD2KA–TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts This is Version 2 of the Alpha AXP Architecture Handbook. October 1994 While Digital believes the information included in this publication is correct as of the date of publication,


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    PDF CS2008 SVC 561-10 AXP 192 AXP 223 000D 161A-2 161A3 FBRX

    CTB34M

    Abstract: fmlg12 CTB-34M marking RBV Marking code 6H SSB14 RK44 marking A63 SFPB-64 MARKING band color code
    Text: Marking Guide 6 TO3P Type • 1 Small TMD ■ M A ① 9 D ④ ② ③ ①Type No. abbreviation The AM01 Type No. is indicated as “M.” ②Class Z: 200V None: 400V A: 600V B: 800V C: 1000V ③Manufacturing date First character: Year (Last digit of year)


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    PDF 200VNone: 400VA: 800VC: CTB34M CTB34. CTB34M FMU12S FMU12S. FMU12S FMLG12 fmlg12 CTB-34M marking RBV Marking code 6H SSB14 RK44 marking A63 SFPB-64 MARKING band color code

    HVR-1X 7 diode

    Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
    Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


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    PDF O01EC0 TM1061S-L TM1061S-R TM1241S-L TM1241S-R TM1261S-L TM1261S-R TM1641P-L TM1641S-L TM1661P-L HVR-1X 7 diode STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC U S A H E Rectifier Diodes for Power Supply • V rsm D | ?^D741 □□001E1 3 | :1 0 0 ~ 8 0 0 V H l o : 0 . 7 5 ~ 6 . 0 A MI/RBV Absolute Maximum Ratings Rating/ Characteristics V rsm lo If s m V (A ) (A) RBV-402L RBV-406M RBV-601 RBV-602


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    PDF 001E1 RBV-402L RBV-406M RBV-601 RBV-602 RBV-604 RBV-606 RBV-608 MI-101 MI-101R

    ctb34

    Abstract: FMLG12 rb40 diodes RB40 N Sanken rb60 RB40 rb60 RECTIFIER CTB-34 7110743 FML-G12
    Text: SANKEN ELECTRIC CO L T » 3 5E m » •M 7110741 DGDOfill 0 SAK J EVrm:100~ 600V Ultra Fast Recovery Diodes E io : 5 ~ 20A CTL/RBV/RBA Absolute Maximum Ratings V rsm V V rm (V) Type N o \ ^ per chip CTL-12S CTL-21S CTL-22S CTL-31S CTL-32S RBV-406H RBA-402L


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    PDF CTL-12S CTL-21S CTL-22S CTL-31S CTL-32S RBV-406H RBA-402L RBV-602L 200Vl RB601 ctb34 FMLG12 rb40 diodes RB40 N Sanken rb60 RB40 rb60 RECTIFIER CTB-34 7110743 FML-G12

    rb60 RECTIFIER

    Abstract: ITE 8512 ctl22s RB40 rb60 Sanken rb60 rb40 diodes CTL-22S CTUG3D RB40 N
    Text: SANKEN ELECTRIC CO LT» m 35E » 7110741 DGDOfill 0 S A K J “7723-07 •M Ultra Fast Recovery Diodes EVrm:100~ 6 0 0 V E io : 5 ~ 20 A CTL/RBV/RBA Absolute Maximum Ratings V rm V lo (A) 200 200 With 50H2HallSineWave SinglePulse Fin 5.0 35 100 100 200


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    PDF CTL-12S CTL-21S CTL-22S CTL-31S CTB-34/34S/34M, CTB-33 CTB-34. MI-10/15 SFPB-64 rb60 RECTIFIER ITE 8512 ctl22s RB40 rb60 Sanken rb60 rb40 diodes CTUG3D RB40 N

    sanken RB40

    Abstract: rba402 MI152R MI-152R "Sanken RB40"
    Text: SANKEN ELECTRIC CO LTD í 3SE D Rectifier Diodes for Power Supply E3 7 ^ 0 7 4 1 QOQO?11}? S E3S A K J7 ^ 2 3 - 0 / h v RSm:100~800V m o:0.75~6.0A .2 C T 2 Ï3 Ï MI/RBA/RBV Rating/ Characteristics V rsm V lo (A) Type N o \ ^ MI-101 MI-101R MI-102 MI-102R


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    PDF MI-101 MI-101R MI-102 MI-102R MI-104 MI-104R MI-106 MI-106R MI-151 MI-151R sanken RB40 rba402 MI152R MI-152R "Sanken RB40"

    RBA-406B

    Abstract: CI 3060 elsys CTUG3D AM01 AU02 EM01 EU02A FMU12S FMU-12S rb40 RECTIFIER
    Text: SANKEN ELECTRIC CO LTD 3SE 5 Schottky Barrier Diodes m 7 ^ 0 7 4 1 0000fl21 «= ^ S A K J ^ ; £ | : g | E3Vrm: 3 0 — 9 0 V E lo : 0 .7 ~ 3 0 A SFPB/AK/EK/RK/FMB/CTB/RBA/RBV S F P B -5 4 S F P B -6 4 S F P B -5 6 S F P B -5 9 A K 03 A K 04 A K 06 A K 09


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    PDF sfpb-54 sfpb-64 sfpb-56 sfpb-59 MI-10/15 RBA-406B CI 3060 elsys CTUG3D AM01 AU02 EM01 EU02A FMU12S FMU-12S rb40 RECTIFIER

    CTUG3D

    Abstract: D0200
    Text: SANKEN ELECTRIC CO LT» 3SE » Schottky Barrier Diodes •a 00008S1 7 n o 7 m E3Vrm : i 30—90V Elo : 0.7—30A SFPB/AK/EK/RK/FMB/CTB/RBA/RBV 36 Type N o \ ^ Per chip S F P B -5 4 S F P B -6 4 S F P B -5 6 S F P B -5 9 AK 03 AK 04 AK 06 AK 09 EK 0 3 EK 0 4


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    PDF 00008S1 0--90V RB601 RB602 RB604 RB606 SFPB-64 CTUG3D D0200

    24RCL

    Abstract: 00FF DS2182 DS2187 S2182
    Text: DS2182 DALLAS SEMICONDUCTOR DS2182 T1 Line Monitor PIN ASSIGNMENT FEATURES • Performs framing and monitoring functions in t • Supports Superframe and Extended Superframe formats 1 SDO[ 3 cs[ • Four onboard error counters - 16-bit bipolar violation - 8-bit CRC


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    PDF DS2182 16-bit 28-pin DS2187 OS2182 DS2182Q 2bl413D 24RCL 00FF DS2182 S2182

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2182 T1 Line Monitor PIN ASSIGNMENT FEATURES • Performs framing and monitoring functions • Supports Superframe and Extended Superframe formats • Four onboard error counters - 16-bit bipolar violation 8-bit CRC 8-bit OOF 8-bit frame bit error


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    PDF DS2182 16-bit 2bl413D OS2182 DS2182Q 28-PIN 2bmi30

    Untitled

    Abstract: No abstract text available
    Text: DS2182 DALLAS s e m ic o n d u c to r DS2182 T1 Line Monitor PIN ASSIGNMENT FEATURES • Performs framing and monitoring functions in t • Supports Superframe and Extended Superframe formats 16-bit bipolar violation - 8-bit CRC 8-bit OOF - 8-bit frame bit error


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    PDF DS2182 16-bit 28-pin DS2187 OS2182 DS2182Q 2bl413D

    APT40GF100BN

    Abstract: TO 48 THYRISTOR FAST SWITCHING TRANSISTOR 400 VOLTS
    Text: A D VA NC ED POUER TECHNOLOGY b lE D • D E S TIC I □ OOOfl'iG b3T *A V P A dvanced po w er TECHNOLOGY APT40GF100BN 1000V 40A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR All Ratings: Tc = 25°C unless otherwise specified.


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    PDF DES71Ã APT40GF100BN TO 48 THYRISTOR FAST SWITCHING TRANSISTOR 400 VOLTS