jeida dram 88 pin
Abstract: No abstract text available
Text: IB M 1 1 J 4 3 2 0 C N 4M x 32 3.3V IC DRAM Card Features • Industry Standard 88Pin IC DRAM Card • Performance: Single 3.3V, ± 0.3V Power Supply All inputs buffered except RAS and DATA inputs Multiple RAS inputs for x16 or x32 selectability 12/10 Addressing Row/Column
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88Pin
130ns
256ms
IBM11J4320CN
IBM11J4320CN
jeida dram 88 pin
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PDF
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TB 1226 BN
Abstract: 531 T70 n03 0AS001 B05AD 2U 34
Text: in y Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451 NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998,1999 Information in this document is provided in connection with Intel products. No license, express or
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450NX
82454NX
82453NX
82452NX
TB 1226 BN
531 T70 n03
0AS001
B05AD
2U 34
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PDF
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INTEL 450NX
Abstract: intel 8042 8042 intel kbc intel G31 circuit diagram LXG Series DIODE C04 06 intel 8042 port 64h pciset datasheet transistor w04 450GX
Text: intel Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998, 1999 Information in this document is provided in connection with Intel products. No license, express or
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Original
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450NX
82454NX
82453NX
82452NX
82451NX
INTEL 450NX
intel 8042
8042 intel kbc
intel G31 circuit diagram
LXG Series
DIODE C04 06
intel 8042 port 64h
pciset datasheet
transistor w04
450GX
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PDF
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intel 8042
Abstract: 450GX 450NX 82451NX 82452NX 82453NX 82454NX CL-CK L10
Text: intel Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451NX Memory & I/O Controller (MIOC) Order Number: 243771-004 June 1998 Intel Corporation 1998 Information in this document is provided in connection with Intel products. No license, express or
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Original
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450NX
82454NX
82453NX
82452NX
82451NX
intel 8042
450GX
CL-CK L10
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PDF
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5962-7802301MEX
Abstract: 5962-7802301MFX 5962-7802301M2X qml-38535 smd marking 6z 26f31 smd marking code 6z 7802301EX
Text: AMO ¿I NOTICE OF REVISION NOR (See MIL-STD-480 fo r instru ctio n s) Th's re visio n aescriseo aelaw ras seen autnor'zea fa r tre ascunent ''s te o . DATE ( vYMP00i 31/11/22 conn AccrcvBO 0MB No. :704-0188 Public re so rtin g Buraen fo r th is c o lle c tio n Is estimated to average 1 hour cer -esponse. inclu d in g tne time fo r reviewing
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MIL-STD-480
vYMP00i
26LS31
5962-7802301MEX
5962-7802301MFX
5962-7802301M2X
qml-38535
smd marking 6z
26f31
smd marking code 6z
7802301EX
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PDF
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ry 130-2
Abstract: No abstract text available
Text: APPLICA TION NOTE \ NEC DRAM-CPU CONNECTION METHODS \ \ NEC Corporation 1994, 1996 \ \ Document No. M11443EJ3V0AN00 3rd edition (Previous No. IEA-1302) Date Published August 1996 P Printed in Japan 1215 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
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M11443EJ3V0AN00
IEA-1302)
ry 130-2
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PDF
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CXP10
Abstract: No abstract text available
Text: '3 * -W molate 2S6K x 8 CMOS Vìdeo RAM MVM8256X-10/12/15 Issue 1.2 : January 1993 S e m ic o n d u c to r ADVANCE PRODUCT INFORMATION Inc. ^ 262,144 x 8 CMOS Video RAM N < ckage Type - Features >< Pin Definition 40 GND1 SI/07 SI/06 37 Sl/05 36 SI/04 35 SE
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MVM8256X-10/12/15
MIL-STD-883,
SI/01
SI/02
SI/03
MVM8256VMB-10
MIL-STD-883
CXP10
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S 16165L , 4 2 16 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The /iP D 42S 16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page
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uPD42S16165L
uPD4216165L
16-BIT,
16165L,
4216165L
42S16165L
PD42S16165L,
50-pin
42-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C2M8B1/2 2 MEG X 8 WIDE DRAM |^ IIC = R O N WIDE DRAM 2 MEG x 8 DRAM 5.0V FAST-PAGE-MODE (MT4C2M8B1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8B1/2) FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6
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28-Pin
A0-A10;
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C2M8A1/2 S 2 MEG x 8 DRAM I^IICRON 2 MEG x 8 DRAM 5.0V, SELF REFRESH (MT4C2M8A1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8A1/2 S) FEATURES PIN ASSIGNMENT (Top View) • SELF REFRESH, i.e. "Sleep Mode" • Industry standard x8 pinouts, timing, functions and
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512ms)
096-cycle
048-cycle
A0-A11;
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C2M8B1/2 S 2 MEG X 8 WIDE DRAM M ICRO N WIDE DRAM 2 MEG X 8 DRAM 5.0V SELF REFRESH ÍMT4C2M8B1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8B1/2 S) FEATURES PIN A SSIG N M EN T (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access
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32-Pin
A0-A10;
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C2M8A1/2 2 MEG X 8 WIDE DRAM M IC R O N WIDE DRAM 2 MEG X 8 DRAM 5.0V, FAST-PAGE-MODE (MT4C2M8A1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8A1/2) FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7
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28-Pin
28-pin
32-pin
A0-A11
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PDF
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Untitled
Abstract: No abstract text available
Text: H I T A C H I / L O G I C / A R R A Y S / n SIE D 4 4 ^ 5 0 3 o o n s o a HM538123 Series-131,072-Word X 8-Bit Multiport CMOS Video RAM T - HITE 400 4 6 - 2 3 - Z b • DESCRIPTION The HM538123 is a 1-Mbit multiport video RAM equipped with a 128k-word x
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HM538123
Series---------------------131
072-Word
128k-word
256-word
TTP-20D
TTP-20DR
54aax
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PDF
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Untitled
Abstract: No abstract text available
Text: I ADVANCE M T4 L C 2M 8B 1/2 S IEG X 8 W IDE DRAM MICRON WIDE DRAM 2 MEG X 8 DRAM 5.0V SELF REFRESH (MT4C2M8B1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8B1/2 S) FEATURES PIN ASSIGNMENT (Top View) OPTIONS 28 ] Vss 27 ] 0 Q 8 26 ] DQ7 Vcc [ 1 001 C 2 OQ2 [ 3 DQ3 [ 4
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256ms)
048-cycle
096-cycle
400mW
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T4 L C 2M 8B 1/2 2 MEG X 8 W ID E DRAM I^ IIC R D N WIDE DRAM 2 MEG x 8 DRAM 5.0V FAST-PAGE-MODE (MT4C2M8B1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8B1/2) FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access
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048-cycle
096-cycle
400mW
A0-A10;
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C2M8B1/2 2 MEG X 8 DRAM |U |IC =R O N 2 MEG x 8 DRAM 5.0V FAST PAGE M ODE (MT4C2M8B1/2) 3.0/3.3V, FAST PAGE M ODE (MT4LC2M8B1/2) FEATURES PIN ASSIGNMENT (Top View) • Industry standard x8 pinouts, timing, functions and packages • Address entry: 11 row, 10 column addresses (32ms);
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048-cycle
096-cycle
400mW
A0-A10;
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PDF
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dram zip
Abstract: No abstract text available
Text: PRELIMINARY U | | C n D N 256K X M T4C 16260/1 16 W ID E DRAM 256K X 16 DRAM WIDE DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process
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500mW
024-cycle
MT4C16261
40-Pin
MT4C16260/1
dram zip
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE l^ iic n o N 256K WIDE DRAM X MT4C16270/1 16 WIDE DRAM 256K x 16 DRAM FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500mW active, typical
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MT4C16270/1
500mW
512-cycle
MT4C16271
40-Pin
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PDF
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ras 1210
Abstract: ras- 1210
Text: ADVANCE MT4LC2M8B1 S MEG X 8 DRAM M IC R O N 2 DRAM 2 MEG x 8 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • JEDEC- and industry-standard x8 pinouts, timing, functions and packages • High-performance CM OS silicon-gate process
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200mW
048-cycle
28-Pin
A0-A10;
ras 1210
ras- 1210
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PDF
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pin diagram for IC cd 1619 cp
Abstract: pin configuration of IC 1619 cp 8A4A6 pin configuration of cd 1619 cp
Text: STI804100D2 168-PIN DIMMS 4M X 80 DRAM DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC Vc STI804100D2-60 60ns 20ns 110ns STI804100D2-7Q 70ns 25ns 130ns The Simple Technology STI804100D2 is an 4M x 30 bit Dynamic RAM high density memory module. The module consist of 20
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STI804100D2
STI804100D2-60
STI804100D2-7Q
110ns
130ns
168-PIN
STI804100D2
24-pin
pin diagram for IC cd 1619 cp
pin configuration of IC 1619 cp
8A4A6
pin configuration of cd 1619 cp
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY I^ IIC R O N 256K WIDE DRAM 256K X X MT4C16260/1 16 WIDE DRAM 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-perform ance CM OS silicon-gate process
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MT4C16260/1
024-cycle
MT4C16261
40-Pin
256KX
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • blllSM'î D D 0 7 7 H C1 lûl ■ MRN ADVANCE M IC R O N I MT4 L C2 M8 B112 2 MEG X 8 WIDE DRAM SEMICONDUCTOR INC WIDE DRAM 2 MEG x 8 DRAM 5.0V FAST-PAGE-MODE (MT4C2M8B1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8B1/2) FEATURES
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048-cycle
096-cycle
400mW
A0-A10;
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PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C2M8A1/2 2 MEG X 8 DRAM M IC R O N 2 MEG x 8 DRAM 5.0V, FAST PAGE MODE (MT4C2M8A1/2) 3.0/3.3V, FAST PAGE MODE (MT4LC2M8A1/2) FEATURES PIN ASSIGNMENT (Top View) • Industry standard x8 pinouts, timing, functions and packages • Address entry: 12 row, nine column addresses (64ms)
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400mW
096-cycle
048-cycle
A0-A11
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process
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MT4C16260/1
500mW
024-cycle
MT4C16261
40-Pin
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PDF
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