RD2 TP10
Abstract: L6244 J311 PDI 40 JS29 EPM7032 JS37 4.7k j33 TXD RXD R105
Text: A B C DData[31:0] DData[31:0] DAddr[8:0] DAddr[8:0] DAddr[8:0] RAS~[1:0] WE~ CAS~ ChipSel~ RAS~[1:0] WE~ CAS~ ChipSel~ RAS~[1:0] WE~ CAS~ ChipSel~ DData[31:0] 4 Int~ Req~ Serr~ IdSel DevSel~ Stop~ Par Perr~ Frame~ IRdy~ TRdy~ Gnt~ PCI CBE~[3:0] PRst~ PciClk
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GT48001A
33MClk
B33MClk
74FCT244
33MHz
80MHz
RD2 TP10
L6244
J311
PDI 40
JS29
EPM7032
JS37
4.7k j33
TXD RXD
R105
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Untitled
Abstract: No abstract text available
Text: Surface Mount RAS-2-75+ RAS-2-75 Attenuator/Switch 75Ω Bi-Phase 10 to 1000 MHz Maximum Ratings Features Operating Temperature •wideband,10to1000MHz •excellentphaseandamplitudeunbalance -40°C to 85°C Storage Temperature
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RAS-2-75+
RAS-2-75
TT241
M96904
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MT4C4007JDJ-6
Abstract: MT4C4007JDJ-6L A4 marking EDO DRAM
Text: OBSOLETE 1 MEG x 4 EDO DRAM MT4C4007J DRAM FEATURES PIN ASSIGNMENT Top View Single +5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible Refresh modes: RAS#-ONLY, CAS#-BEFORE- RAS#
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MT4C4007J
024-cycle
128ms
20/26-Pin
MT4C4007JDJ-6
MT4C4007JDJ-6L
A4 marking
EDO DRAM
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Untitled
Abstract: No abstract text available
Text: DRAXMP-50/256 256MB-32M x 72, 168-Pin Buffered EDO DIMM Performance range Speed TRA C TCA C TRC THPC RAC CAC -5 Features 50ns 18ns 84ns 20ns Description Extended Data-Out mode operation CAS-before-RAS refresh capability RAS-onlyandhiddenrefreshcapability 8Krefresh/64mS
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DRAXMP-50/256
256MB-32M
168-Pin
8Krefresh/64mS
DRAXMP-50/256
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Untitled
Abstract: No abstract text available
Text: IS41C16256A IS41LV16256A ISSI 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout
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IS41C16256A
IS41LV16256A
IS41C16256A)
IS41LV16256A)
IS41C16256A
IS41LV16256A
16bit
16-bit
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Untitled
Abstract: No abstract text available
Text: IS41C44052C IS41LV44052C 4Mx4 16Mb DRAM WITH FAST PAGE MODE ADVANCED INFORMATION MAY 2010 FEATURES DESCRIPTION • Fast Page Mode Access Cycle • TTL compatible inputs and outputs • Refresh Interval: 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS CBR , and Hidden
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IS41C44052C
IS41LV44052C
cycles/32
IS41C44052C)
IS41LV44052C)
IS41C/41LV44052C
300-mil
Alloy42
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IS41C85125A
Abstract: IS41C85125A-60K IS41LV85125A-60K IS41LV85125A-60KL
Text: IS41C85125A IS41LV85125A ISSI 512K x 8 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE APRIL 2005 FEATURES DESCRIPTION • • • • Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 1024 cycles/16 ms Refresh Mode: RAS-Only, CAS-before-RAS
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IS41C85125A
IS41LV85125A
cycles/16
IS41C85125A)
IS41LV85125A)
IS41C85125A
IS41LV85125A
28-Pin
Max40
IS41C85125A-60K
IS41LV85125A-60K
IS41LV85125A-60KL
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IS41LV85125B-60K
Abstract: IS41LV85125B-60KL IS41LV85125B 28-PIN B0419
Text: ISSI IS41LV85125B 512K x 8 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE APRIL 2005 FEATURES DESCRIPTION • • • • Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 1024 cycles/16 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
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IS41LV85125B
cycles/16
IS41LV85125B
28-Pin
IS41LV85125B-60K
IS41LV85125B-60KL
B0419
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Untitled
Abstract: No abstract text available
Text: Surface Mount RAS-2-75+ RAS-2-75 Attenuator/Switch 75Ω Bi-Phase Maximum Ratings Operating Temperature Storage Temperature 10 to 1000 MHz Features • wideband, 10 to 1000 MHz • excellent phase and amplitude unbalance -40°C to 85°C -55°C to 100°C Control Current
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RAS-2-75+
RAS-2-75
TT241
2002/95/EC)
M134338
RAS-2-75
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IS41LV16256B
Abstract: 41LV16256B
Text: ISSI IS41LV16256B 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout
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IS41LV16256B
IS41LV16256B
16-bit
41LV16256B
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IS41LV85120B-60K
Abstract: IS41LV85120B-60KL IS41LV85120B
Text: ISSI IS41LV85120B 512K x 8 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout
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IS41LV85120B
cycles/16
IS41LV85120B
32-bit
IS41LV85120B-60K
IS41LV85120B-60KL
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IS41C85120A
Abstract: IS41C85120A-60K IS41LV85120A-60K IS41LV85120A-60KL
Text: IS41C85120A IS41LV85120A ISSI 512K x 8 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout
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IS41C85120A
IS41LV85120A
cycles/16
IS41C85120A)
IS41LV85120A)
IS41C85120A
IS41LV85120A
IS41LV85140
IS41C85120A-60K
IS41LV85120A-60K
IS41LV85120A-60KL
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IS41LV16256B-35TL
Abstract: No abstract text available
Text: ISSI IS41LV16256B 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout
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IS41LV16256B
IS41LV16256B
16-bit
IS41LVSOP
IS41LV16256B-35TL
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7481 memory ics
Abstract: oti-037
Text: OAK TECHNOLOGY INC. OTI-037 SYSTEM BLOCK DIAGRAM REFRESH SIR SIW SMR OTI-037 -RASO -CAS -W E -O E -IO W R -RAS -CAS -W E -O E BUS INTERFACE PLANEO 64K BYTE MD0-MD7 DATA ADDRESS I MDO-MD7 ASEL SA8-SA16 -RAS -CAS WE -O E PLANE 1 64K BYTE RAS -CAS -W E -O E PLANE 2
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OTI-037
SA8-SA16
MD8-MD15
SA0-SA19
MD16-MD23
MD24-MD31
7481 memory ics
oti-037
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Untitled
Abstract: No abstract text available
Text: IBM0165165B IBM0165165P 4M X 16 12/10 EDO DRAM Features 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write Single 3.3 ± 0.3V power supply Performance: Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/retention Time RAS only Refresh
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IBM0165165B
IBM0165165P
104ns
526mW
165ma
175ma
135ma
145ma;
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TC 30i
Abstract: IS41C16257 Z239
Text: ISS! 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE ADVANCE INFORMATION AUGUST 1997 DESCRIPTION FEATURES Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 512 cycles/8 ms Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
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40-pin
The755/
IS41C16257
16-bit
IS41C16257
IS41C16257-35K
400-mil
IS41C16257-35T
TC 30i
Z239
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Untitled
Abstract: No abstract text available
Text: ISSI' IS41C16257 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE ADVANCE INFORMATION AUGUST 1997 DESCRIPTION FEATURES • Fast access and cycle time • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms Refresh Mode : RAS-Only, CAS-before-RAS (CBR),
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IS41C16257
IS41C16257
16-bit
acce257
IS41C
16257-35K
16257-35T
IS41C16257-40K
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Untitled
Abstract: No abstract text available
Text: STI641004D1-60G 168-PIN DIMMS 1M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC *RC *HPC 60ns 17ns 110ns 25ns • • EDO (Hyper) Mode operation CAS-before-RAS refresh capability • RAS-only refresh capability
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STI641004D1-60G
168-PIN
110ns
STI641004D1-60G
42-pin
168pin
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AS4C256K16F0-60JC
Abstract: ez 948 AS4C256K16F0 LRAL taa 723
Text: WÊ High Performance 256Kxl6 CMOS DRAM AS4C256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY F E A TU R E S 512 refresh cycles, 8 ms refresh interval * Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh • High speed
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AS4C256K16F0
256Kxl6
256Kxl6
4C256K16F0-50)
I/014
I/013
I/012
40-pin
AS4C256KI6F0-50JC
AS4C256K16F0-60JC
AS4C256K16F0-60JC
ez 948
AS4C256K16F0
LRAL
taa 723
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Untitled
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P 8 M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time RAS only Refresh - 4096 cycles/Retention Time
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IBM0165805B
IBM0165805P
104ns
504mW
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 36-Bit Dynamic RAM Module HYM 362140S/GS-60/-70 Advanced Information 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access time
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36-Bit
362140S/GS-60/-70
18-bit)
fl235b05
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Untitled
Abstract: No abstract text available
Text: Il High Performance 256Kxl6 CMOS DRAM AS4C256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY I F E A TU R E S_ • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh
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256Kxl6
AS4C256K16F0
256Kxl6
40-pin
4C256K16F0-50)
AS4C256K
16F0-50JC
40-pin
AS4C256K16F0-60JC
256K16
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Untitled
Abstract: No abstract text available
Text: ISSI' IS41C16256 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • JULY 1997 Refresh Interval: 512 cycles/8 ms Refresh Mode : RAS-Only, CAS-before-RAS (CBR),
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IS41C16256
IS41C16256
16-bit
400-mil
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the pin function of ic 7107
Abstract: No abstract text available
Text: STI644104D1-60G 168-PIN DIMMS 4M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • GENERAL DESCRIPTION Performance range: ^rac ^CAC ÏRC ^HPC 60ns 15ns 110ns 24ns • EDO (Hyper) Mode operation • CAS-before-RAS refresh capability • RAS-only refresh capability
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STI644104D1-60G
168-PIN
110ns
STI644104D1-60G
24-pin
the pin function of ic 7107
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