RAM EDAC SEU
Abstract: SRAM edac AC304 sram 2114 edac 2114 SRAM RAM SEU RAM64k36 7 bit hamming code hamming code
Text: Application Note AC304 Simulating SEU Events in EDAC RAM Introduction The Actel RTAX-S Field Programmable Gate Array FPGA provides embedded user static RAM in addition to single-event-upset (SEU)-enhanced logic, including embedded triple-module redundancy (TMR)
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AC304
RAM EDAC SEU
SRAM edac
AC304
sram 2114
edac
2114 SRAM
RAM SEU
RAM64k36
7 bit hamming code
hamming code
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FM24V10
Abstract: memoire electronique memoire FM24V05 FM25V05 FM25V10 FM28V100 memoire eeprom
Text: ELECTRONIQUE MAG.COM | NOUVEAUX PRODUITS Ramtron annonce des mémoires F-RAM série famille V 512 Kbits et 1 Mbits Publication: Avril 2009 Deux nouveaux membres dans la famille de F-RAM rapides RAMTRON. Ramtron International Corporation Nasdaq : RMTR ,
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FM24V05
FM24V10
FM24V05,
FM24V10,
com/article1451
memoire electronique
memoire
FM25V05
FM25V10
FM28V100
memoire eeprom
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Untitled
Abstract: No abstract text available
Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is
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HX6228
Hone8295
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Untitled
Abstract: No abstract text available
Text: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is
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HLX6256
ADS-14228
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d5200c
Abstract: RAMB16BWER vhdl code SECDED Xilinx ISE Design Suite 14.2 XC6SLX45T RAMB18E1
Text: LogiCORE IP AXI Block RAM BRAM Controller (v1.03a) DS777 July 25, 2012 Product Specification Introduction LogiCORE IP Facts Table The LogiCORE IP AXI Block RAM (BRAM) Controller is a soft IP core for use with the Xilinx Vivado™ Design Suite, Embedded Development Kit
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DS777
ZynqTM-7000
d5200c
RAMB16BWER
vhdl code SECDED
Xilinx ISE Design Suite 14.2
XC6SLX45T
RAMB18E1
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HX6228
Abstract: honeywell memory sram
Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is
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HX6228
Honeywe-8295
HX6228
honeywell memory sram
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krad
Abstract: 67025E TM1019 RAM SEU
Text: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity
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8Kx16
50Krad
10Krad
35Krad
NT94055,
9849/92/NL,
krad
67025E
TM1019
RAM SEU
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A12L
Abstract: No abstract text available
Text: 7025E 8K x 16-Bit Dual Port RAM High-Speed CMOS Memory Logic Diagram FEATURES: DESCRIPTION: • 8K x 16-bit dual port RAM - Stand Alone - Master Slave • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission
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7025E
16-Bit)
16-bit
A12L
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MA5104
Abstract: No abstract text available
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,
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MA5104
DS3580-3
MA5104
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XG403
Abstract: max9187 MA9187 DS3480-3 GEC Plessey Semiconductors
Text: MA9187 APRIL 1995 DS3480-3.2 MA9187 RADIATION HARD 65536 x 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5µm technology. The device has separate input and output terminals controlled
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MA9187
DS3480-3
MA9187
XG403
max9187
GEC Plessey Semiconductors
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DS3580-3
Abstract: No abstract text available
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,
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MA5104
DS3580-3
MA5104
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Untitled
Abstract: No abstract text available
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,
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MA5101
DS3579-3
MA5101
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Untitled
Abstract: No abstract text available
Text: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industrystandard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in low voltage
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HLX6256
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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HM538122
Abstract: No abstract text available
Text: HM538122 Series — Preliminary 131072-Word x 8-Bit Multiport CMOS Video RAM The HM538122 is a 1-Mbit multiport video RAM equipped with a 128-kword x 8-bit dynamic RAM and a 256-word x 8-bit SAM serial access memory . Its RAM and SAM operate independently and asynchronously. It
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HM538122
131072-Word
128-kword
256-word
SI/01
SI/02
SI/03
SI/07
SI/06
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Untitled
Abstract: No abstract text available
Text: CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance Speed Parameter RAM access tim e îr a c • • • • • • • • • • • • GENERAL DESCRIPTION
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KM428C128
110ns
40-PIN
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Untitled
Abstract: No abstract text available
Text: HM538121A Series Preliminary 262,144-W ord x 4-Bit M ultiport C M OS V ideo RAM • DESCR IPTIO N HM 538121AJ Series The HM538121A is a 1-Mbit multiport video RAM equipped with a 128k-word x B-bit dynamic RAM and a 256-word x 8-bit SAM serial access memory . Its RAM and
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HM538121A
128k-word
256-word
ns/100
ns/25
2000Sierra
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Untitled
Abstract: No abstract text available
Text: HM534251 Series 262,144 x 4-Bit Multiport CMOS Video Random Access Memory • DESCRIPTION HM534251JP Series The HM534251 is a 1-Mbit multiport video RAM equipped with a 256k-word x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM
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HM534251
256k-word
512-word
HM534251JP
ns/100
ns/120
ns/150
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Untitled
Abstract: No abstract text available
Text: HM538121 S eries- Preliminary 131,072 x 8-B it M ultiport CMOS V ideo Random A ccess M em o ry • DESCR IPTIO N H M 538121JP Series The HM538121 is a 1-Mbit multiport video RAM equipped with a 120k-word x 8 -bit dynamic RAM and a 256-word x 8 -bit SAM serial access memory . Its RAM
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HM538121
eries----------------------131
120k-word
256-word
128k-word
ns/100
ns/120
ns/150
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HM658128ALP-10
Abstract: HM658128ALP12 HM658128ALP-12L
Text: HM658128A Series 131072>w ord x 8 -b it H igh S p eed C M O S P seu do S ta tic RAM The Hitachi HM658128A is a pseudo-static RAM organized as 131,072-word x 8-bit. HM658128A realizes low power consumption and high speed access time by employing 1.3 |im CMOS process
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HM658128A
131072-word
072-word
HM658128ALP-10
HM658128ALP12
HM658128ALP-12L
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Untitled
Abstract: No abstract text available
Text: CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words x 16 bit organization T he LH 5P V 16256 is a 4M bit P seudo-S tatic RAM w ith a 262 ,14 4 w ords x 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)
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cycles/32
44-pin,
44-PIN
TSOP44-P-400)
400-m
4-P-400)
5PV16256S-12
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HC7464
Abstract: TTL 7464
Text: Honeywell NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM- MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out 1 jis Read Cycle Time • Unlimited read/write (>1E15 cycles) 250 ns Write Cycle Time Power off data retention
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HC7464
500mW
HC7464
TTL 7464
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Untitled
Abstract: No abstract text available
Text: NEC . NEC Electronics Inc. Description The /jPD751xx/P1xx is a family of high-performance single-chip CMOS microcomputers containing CPU, ROM, RAM, I/O ports, comparator, interval timer, two timer/counters, vectored interrupts, and a serial inter face. The instruction set allows the user to manipulate RAM
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/jPD751xx/P1xx
/PD27C256
jjPD751
/75P1x
ffPD751xx/75P1xx
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24512
Abstract: w24512 W24512S-65LL 24512A
Text: W24512 finbond M 64K X 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24512 is a slow speed, low power CMOS Static RAM organized as 65536*a bits that oparatês on a singlo 3 -volt power supply. Tffli device is manufactured using Winbòrtd’s high performance CMOS
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W24512
200mW
32-pin
450mll
W24512
24512
W24512S-65LL
24512A
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