Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits
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XL24410
XL24810
XL2441ODS
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Untitled
Abstract: No abstract text available
Text: ^ EXUKDTT [PIRilMlG inte* 87C196KT/87C196KS 20 MHz ADVANCED 16-BIT CHMOS MICROCONTROLLER Automotive —40°C to + 125°C Ambient High Performance CHMOS 16-Bit CPU Up to 32 Kbytes of On-Chip EPROM Up to 1 Kbyte of On-Chip Register RAM Up to 512 Bytes of Additional RAM
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87C196KT/87C196KS
16-BIT
Channel/10-Bit
-/16-Bit
8XC196KT/KS
4fl2bl75
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PDF
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CERAMIC FLATPACK
Abstract: 6165A OM21 EE320 6164B al126 BH75
Text: N E C ELECTRONICS INC blE ]> • b42752S DD3S34E 7TG H N E C E fiPB10A484 4,096 X 4-Blt 10K ECL RAM NEC Electronics Inc. Description Pin Configurations The J&PB10A484 is a very high-speed 10K interface ECL RAM organized as 4,096 words by 4 bits with nonin
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b42752S
DD3S34E
uPB10A484
PB10A484
pPB10A484
400-mil,
28-pin
096-word
CERAMIC FLATPACK
6165A
OM21
EE320
6164B
al126
BH75
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PDF
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d424100
Abstract: 83IH-5695B
Text: f/PD424100 4,194,304 X 1-Bit Dynamic CMOS RAM W Mid W NEC Electronics Inc. D escription Pin C o n fig uratio n s T h e ¡j P D424100 is a fast-page dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced polycide
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uPD424100
D424100
JJPD424100
fiPD424100
83IH-5695B
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PDF
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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PDF
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ADC04
Abstract: 24x4 lcd command ADC-03 ST Microelectronics AN 2316 15 pin LCD module SI002 HS ADC82 ADC82AD
Text: MICR0ELECTR0NICS XL24204 Series 4 -B it M icroco n tro ller OVERVIEW KEY FEATURES Low -voltage, single pow er source V dd = 2 . 0 -5 .5 V M em ory — X L 2 4 2 0 4 :20 48 X 8 b its R O M ; 128 X 4 bits RAM — X L 2 4 4 0 4 :4 0 9 6 X 8 b its R O M ; 256 X 4 bits RAM
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XL24204
XL24204DS
ADC04
24x4 lcd command
ADC-03
ST Microelectronics AN 2316
15 pin LCD module
SI002
HS ADC82
ADC82AD
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PDF
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KM684002J
Abstract: M68400 KM6164002
Text: KM 6164002/L CM OS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500//A (Max) Operating : KM6164002-20 : 250mA (Max.)
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KM6164002/L
500//A
KM6164002-20
250mA
KM6164002-25
240mA
KM6164002-35
220mA
44-SOJ-400
KM6164002/L
KM684002J
M68400
KM6164002
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PDF
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SRAM sheet samsung
Abstract: No abstract text available
Text: Prelim inary CMOS SRAM KM 6164002B, KM6164002BI D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory R ev No. H isto ry D raft Data R em ark
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KM6164002B,
KM6164002BI
256Kx16
SRAM sheet samsung
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary KM6164002C/CL, KM6164002CI/CLI CMOS SRAMI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Rev. 0.0 Initial release with Preliminary.
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KM6164002C/CL,
KM6164002CI/CLI
256Kx16
KM61640
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PDF
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SRAM256KX16
Abstract: SRAM_256KX16
Text: ADVANCED CM OS SRAM KM 6164000AL/AL-L 256K x16 B it CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 55, 70, 85ns Max. • Low Power Dissipation Standby (CMOS) : 500,«W(Typ.) L-Version 5,MW(Typ.) LL-Version Operating : 165mW(max.) • Single 5 ± 1 0 % V power supply
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KM6164000AL/AL-L
256Kx16
165mW
I/09-I/016
KM6164000ALT/LT-
44-TSOP2-400F
KM6164000AL/L-L
304-bit
KM6164000AL7L-L
SRAM256KX16
SRAM_256KX16
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PDF
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Untitled
Abstract: No abstract text available
Text: KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997 Design Target
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KM6164002B,
KM6164002BI
256Kx16
44-TSOP2-400F
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PDF
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Untitled
Abstract: No abstract text available
Text: KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996
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KM6164002A,
KM6164002AE,
KM6164002AI
256Kx16
/20ns
15/17/20ns
44-SOJ-400
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PDF
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Untitled
Abstract: No abstract text available
Text: KM6164002B, KM6164002BI CMOS SRAM Document Tills 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997
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KM6164002B,
KM6164002BI
256Kx16
44-TSOP2-400F
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PDF
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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PDF
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altl
Abstract: No abstract text available
Text: Advanced CMOS SRAM KM6164000AL/AL-L 256Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. The KM6164000AL/AL-L is a 4,194,304-bit high speed • Low Power Dissipation Static Random Access Memory organized as 262,144
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KM6164000AL/AL-L
256Kx16
KM6164000AL/AL-L
304-bit
6164000AL/AL-L
KM6164he
KM6164000ALT/ALT-L:
400mil
0D213G1
altl
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PDF
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Untitled
Abstract: No abstract text available
Text: Datasheet Standard LCD Segment Driver BU9799KV MAX 200 segments SEG50xCOM4 ●Features Integrated RAM for display data (DDRAM): 50 x 4 bit (Max 200 Segment) LCD drive output : 4 Common output, 50 Segment output Integrated Buffer AMP for LCD driving
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BU9799KV
SEG50
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PDF
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Untitled
Abstract: No abstract text available
Text: Datasheet Standard LCD Segment Driver BU9799KV MAX 200 segments SEG50xCOM4 Features ̈ Integrated RAM for display data (DDRAM): 50 x 4 bit (Max 200 Segment) ̈ LCD drive output : 4 Common output, 50 Segment output ̈ Integrated Buffer AMP for LCD driving
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BU9799KV
SEG50Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS Exc»Mine* in 6* XL24E805 4-Bit Microcontroller KEY FEATURES OVERVIEW Cost-effective 4-bit microcontroller CMOS process for low current drain Low voltage, single power supply — VD D -2.5~5.5V 8192 bytes ROM 256 x 4 bits general-purpose RAM
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XL24E805
300KHz
XL24E805DS
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary KM6164002A CMOS SRAM 256Kx 16 Biit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (C M O S): 10 mA(Max.) Operating KM6164002A-12 : 260 mA(Max.)
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KM6164002A
256Kx
KM6164002A-12
164002A
KM6164002A-20
KM6164002AJ
44-SOJ-4QO
KM6164002A
304-bit
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PDF
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3088
Abstract: 4 line lcd BU9799
Text: BU9799KV Datasheet Standard LCD Segment Driver BU9799KV MAX 200 segments SEG50xCOM4 ●Features Integrated RAM for display data (DDRAM): 50 x 4 bit (Max 200 Segment) LCD drive output : 4 Common output, 50 Segment output Integrated Buffer AMP for LCD driving
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Original
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BU9799KV
BU9799KV
SEG50
3088
4 line lcd
BU9799
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PDF
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26BH
Abstract: STP03 STK 4144 application circuit SI002
Text: MICROELECTRONICS \_ J * Ê £re*//*nc* XL24E410 iflE* 4-Bit Microcontroller Emulator KEY FEATURES OVERVIEW • Low voltage, single power source V d d - 2.3 -5.5V ■ Memory — E2PROM for program (max.): 8192 x 8 bits — General-purpose RAM : 256 x 4 bits
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XL24E410
XL24E410DS
26BH
STP03
STK 4144 application circuit
SI002
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PDF
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2114 Ram pinout 18
Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
Text: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in
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Original
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MWS5114
1024-Word
MWS5114
2114 Ram pinout 18
9114 RAM
2114 static ram
2114 static ram ic
ic 2114
MWS5114E3
9114 static ram
MWS5114-3
2114 4 bit Ram pinout
2114 ram
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PDF
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Untitled
Abstract: No abstract text available
Text: a Advanced Micro Devices 674219 FIFO RAM Controller Ordering Information Features/ Benefits • High-speed, no fall-through time • Deep FIFOs—16-bit SRAM address Part Number Pins Type Temperature 674219 40 CD 040 Com • Arbitration read/write • Control signals lor data latching
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16-bit
1N916
1N306A.
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PDF
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Untitled
Abstract: No abstract text available
Text: STI648004G1 -60VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC ^RC ^HPC 60ns 15ns 104ns 25ns The Simple Technology STI648004G1-60VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple
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STI648004G1
-60VG
144-PIN
104ns
STI648004G1-60VG
32-pin
400-mil
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PDF
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