RADHARD OVERVIEW Search Results

Contextual Info: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard November 3, 2008 FEATURES ❑ Radiation hardness: - Total dose 1MRad Si - Single event latchup (SEL) immune to 100MeV-cm2 /mg - Single event upset (SEU) 20MeV-cm2 /mg

5962-0625102KXA

Abstract: PWM5032-EM2 5962-0625102KYC PWM5034
Contextual Info: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard April 4, 2008 FEATURES ❑ Radiation hardness: - Total dose 1MRad Si - Single event upset (SEU) 100MeV-cm2 /mg ❑ CMOS low power design Sleep & enable control lines

actel PLL schematic

Abstract: 624 CCGA hardness tester radhard overview HX2000 RH1020 RH1280 XC8100 624-CCGA 256-CQFP
Contextual Info: Semicustom Products FPGA to ASIC Conversions Fact Sheet July 2010 OVERVIEW Aeroflex Colorado Springs has over 20 years experience in converting FPGA and 3rd-party ASIC netlists into Aeroflex RadHard and non-RadHard ASICs. We maintain a growing database of FPGA and 3rd-party ASIC cell libraries used for conversion, and

Contextual Info: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard October 23, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation hardness: - Total dose 1MRad Si - Single event upset (SEU) 100MeV-cm2 /mg

folded cascode second stage

Contextual Info: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard March 30, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation hardness: - Total dose 1MRad Si - Single event upset (SEU) 100MeV-cm2 /mg

25A45

Abstract: UC1843x
Contextual Info: Standard Products ACT5031 RadHard High Speed PWM Controller www.aeroflex.com/RadHard March 21, 2005 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ a n i y r Radiation Hardness: - Total Dose 100 KRad Si - Single Event Upset 80MeV-cm2 /mg

Contextual Info: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard February 8, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation hardness: - Total dose 1MRad Si - Single event upset (SEU) 100MeV-cm2 /mg

AN5031

Contextual Info: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard November 2, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation hardness: - Total dose 1MRad Si - Single event upset (SEU) 100MeV-cm2 /mg

PWM5031

Abstract: ACT5031
Contextual Info: Standard Products PWM5031 RadHard High Speed PWM Controller www.aeroflex.com/RadHard November 30, 2005 y r a n i il m e r P FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation hardness: - Total dose 1MRad Si - Single event upset (SEU) 100MeV-cm2 /mg

UT7R995

Abstract: quartz 100MHZ UT7R9951 MN54AC25C85
Contextual Info: UT7R995 RadClockTM RadHard Clock Generation and Distribution UT7R995 Products TM Executive Product Overview RadClock Date: February 2005 The Clock Problem Serious Challenges to Timing Margin Part-to-Part Skew & Jitter Problems Current Clock Network Solution

mil-std-1553b SPECIFICATION

Abstract: honeywell dcs manual smd code A1t MIL-STD-1773 A1t smd TSI S 14001 1553 SUmmit me 555 AS1773 UT69151
Contextual Info: S f.lMMIT TM Reference Manual Aeroflex Colorado Springs 4350 Centennial Blvd. Colorado Springs, CO 80907 719-594-8000, 719-594-8468 fax www.aeroflex.com/radhard SJ.1MMITTMReference Manual Table of Contents Overview Presentation Section 1 Engineering Notebooks

vcsel spice model

Abstract: magnetic stripe data conversion ir sensor interface with 8051 laser diode spice modeling micron fuse resistors "x-ray detector" VCSEL photodiode L035 interfacing 8051 with magnetic stripe readers metal detector plans
Contextual Info: RadHard Mixed-Signal Overview Aeroflex Colorado Springs April 2007 www.aeroflex.com/RadHardASIC Mixed-Signal Product Line T What we do…. – We connect real world, analog signals to digital systems – We provide the critical link between sensors and information systems

MSI Logic

Abstract: Structure of D flip-flop UNITED TECHNOLOGIES MICROELECTRONICS CENTER "radhard" overview Upset
Contextual Info: Single Event Upset Design Techniques for UTMC’s RadHard MSI Logic Family Overview A Single Event Upset SEU is the result of an ion transitioning through a semiconductor structure and depositing charge on a critical circuit node within that structure. In a CMOS logic circuit,

PWM5032

Contextual Info: Standard Products Datasheet PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM March 27, 2015 FEATURES  Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU:

Contextual Info: Semicustom Products UT90nSDTC-EVB, 3.125 Gbps Quad-lane SerDes Macro Evaluation Board Data Sheet February 2014 www.aeroflex.com/RadHardASIC FEATURES  Aeroflex UT90nHBD 3.125 Gbps SerDes Macro transceiver, CMOS9SF RadHard-by-Design  SMA interfaced Quad Full-Duplex High-Speed Serial

"radhard" overview

Contextual Info: Semicustom Products Customer Owned Tooling Services COTS Fact Sheet October 2007 www.aeroflex.com/RadHard Overview: Aeroflex Colorado Springs’s Customer Owned Tooling Services (COTS) design flow allows the designer to take advantage of an ASIC process that can optimize performance, power, die size, and functionality. By using COTS, designers need only one vendor

simple on/off temperature control circuits

Abstract: CT2100-400
Contextual Info: Standard Products CT2100-400 Microprocessor Controlled QUAD Solid State Relay www.aeroflex.com/RadHard October 16, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ 4 Independent 1.0 amp switches 600 Volts isolation between switches Operates from a 5 Volt logic and 15 Volt bias

NIN18

Contextual Info: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM March 26, 2012 FEATURES ❑ Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg

PMW5032

Abstract: PWM5031 PWM5032 PWM5032-EVAL
Contextual Info: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM June 9, 2009 FEATURES ❑ Radiation performance - Total dose 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg

PWM5032

Abstract: PWM5032-001-2S PWM5032-S PWM5032-001-1S pmw5032 16PF PWM5031
Contextual Info: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM April 22, 2010 FEATURES ❑ Radiation performance - Total dose 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg

PWM5032

Contextual Info: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM March 26, 2012 FEATURES ❑ Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg

UC1843x

Abstract: transistor 2N2222 SMD configuration 25A45 PWM5031 PWM5031-7 5v to 20v pwm amplifier 40khz folded cascode current mirror op amp
Contextual Info: Standard Products PWM5031 RadHard High Speed PWM Controller www.aeroflex.com/Power August 2, 2005 y r a n i il m e r P FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Hardness: - Total Dose 1MRad Si - Single Event Upset (SEU) 100MeV-cm2 /mg

UT8ER512K32

Abstract: RAMDE scrub SRAM edac UT8ER512K32S
Contextual Info: Aeroflex Colorado Springs Application Note Designing with the UT8ER512K32 Monolithic 16M RadHardTM SRAM 1. Introduction This application note describes how to use the UT8ER512K32 Monolithic 16M RadHard SRAM in different system configurations, including a detailed look at the bus signals and CPU interface. The reader will also gain an understanding of how error detection and correction EDAC functions and improves error rate.

Structure of D flip-flop

Contextual Info: Single Event Upset Design Techniques for UTMC’s Rad-Hard MSI Logic Family Overview A Single Event Upset SEU is the result of an ion transitioning through a semiconductor struc­ ture and depositing charge on a critical circuit node within that structure. In a CMOS logic circuit,