R6S DIODE Search Results

R6S DIODE

Abstract: smb marking stmicroelectronics STTH3R06 AN1471 JESD97 STTH3R06RL STTH3R06-RL STTH3R06S STTH3R06U st 3R6U
Contextual Info: STTH3R06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 3A VRRM 600 V IR (max) 100 µA Tj 175°C VF (typ) 1.0 V trr (typ) 35 ns A FEATURES AND BENEFITS • ■ ■ ■ K DO-201AD STTH3R06 Ultrafast switching Low forward voltage drop

R6S DIODE

Abstract: STTH3R06 STTH3R06U 17 SMC st r6s diode AN1471 STTH3R06RL STTH3R06-RL STTH3R06S R06U
Contextual Info: STTH3R06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 3A VRRM 600 V IR (max) 100 µA Tj 175°C VF (typ) 1.0 V trr (typ) 35 ns A FEATURES AND BENEFITS • ■ ■ ■ K DO-201AD STTH3R06 Ultrafast switching Low forward voltage drop

Contextual Info: STTH3R06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 3A VRRM 600 V IR (max) 100 µA Tj 175°C VF (typ) 1.0 V trr (typ) 35 ns A FEATURES AND BENEFITS • ■ ■ ■ K DO-201AD STTH3R06 Ultrafast switching Low forward voltage drop

Contextual Info: SCRs ID200-ID203 ID300-ID301 1.6 Amp, Planar FEATU RES DESCRIPTION • • • • This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs designed for high-voltage, medium-current control applications. The Series is packaged in a TO-39 metal case with Microsemi's unique oxide passivated junctions to ensure

2100-CC

Contextual Info: MITSUBISHI Neh POWER MOSFET FK7SM-12 HIGH-SPEED SWITCHING USE FK7SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1-5 <p 3.2 * 5.45 , 5.45 0.6 . 2.8 O .2 4 • TDS ON (MAX) •600V 1.63Q • I D . . • Integrated Fast Recovery Diode (MAX.) —

NTE7089

Contextual Info: LINEAR INTEGRATED CIRCUITS NTE7073 Front View 9-Lead SIP, See Diag. 566 Hybrid Switching Regulator NTE7075 (Front View) 15-Lead SIP, See Diag. 486 Module, 100W Offline Switching Regulator for Color TV NTE7076 (Front View) 16-Lead SIP, See Diag. 591 Module, 100W Offline Switching Regulator

R6S DIODE

Contextual Info: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9130 D, R, H 2N7307D, 2N7307R 2N7307H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 6A,-100V, RDS(on) = 0.550U TO-2Q4AA • Second Generation Rad Hard MOSFET Result« From New Design Concepts

Contextual Info: BFP760 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.0, 2012-12-04 RF & Protection Devices Edition 2012-12-04 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

R6S DIODE

Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP44N06LT, PHB44N06LT QUICK REFERENCE DATA VnRS = 55 V ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX6N50E FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Isolated package

Contextual Info: MP8782 CM OS 10-Bit High Speed Analog-to-Digital Converter M Micro Power Systems FEATURES APPLICATIONS 10-Bit Resolution 5 MHz Sampling Rate DNL = ±1 LSB, INL = ±2 LSB Internal S/H Function Single 5 V Power Supply V|n DC Range: 0 V to V qd V rep DC Range: 1 V to V qq

DARLINGTON TRANSISTOR ARRAY

Contextual Info: EVERLIGHT. THE SOURCE OF LIGHT. EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable partner for many of the world’s leading electronics companies,

6 Pin LED PIRANHA

Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
Contextual Info: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable

FLUKE 115-N10140 SERIAL NUMBER

Contextual Info: 287/289 True-rms Digital Multimeters Users Manual June 2007, Rev. 1, 7/08 2007, 2008 Fluke Corporation. All rights reserved. Specifications subject to change without notice. All product names are trademarks of their respective companies. Lifetime Limited Warranty

JY MCU

Abstract: IX0011 C68HC05X4 Nippon capacitors
Contextual Info: MC68HC05X4/D MC68HC05X4 MC68HC705X4 ADVANCE INFORMATION Ä M O T O R O LM MC68HC05X4 MC68HC705X4 High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit This document contains information on a new product Specifications and information herein are subject to change without notice.

SN7401

Abstract: SN7449 vogt IL 050 321 31 01 VOGT 406 69 74L95 SN74L00 TME 87 SN6407
Contextual Info: Series 64N and 64LN These devices have identical characteristics to Series 74N or Series 74LN respectively but are guaranteed over the temperature range of - 40° C to +85° C Refer to the appropriate 74 Series data sheet for parameters. G E N E R A L IN F O R M A T IO N A B O U T T T L IN T E G R A T E D C IR C U IT S

2M2222A

Abstract: pj 1349 fxp ERI - 35 - 2 YE 0515 TRANSFORMER 2m2222 cmps a42 transistor TTL 74LSxx dg 2n60 diode cross reference PJ32 fj series capacitor 3uF 600V STB523
Contextual Info: W tipt H E W L E T T mL'HM P AC KAR D HP 1000 M/E/F-Series Computers Engineering and Reference Documentation HEWLETT-PACKARD COMPANY Data Systems Division 11000 Wolfe Road Cupertino, California 95014 MANUAL PART NO. 92851-90001 Printed in U.S.A. March 1981