R5 TRANSISTOR Search Results

R1751

Abstract: Dual Long-Tailed Pair Transistor Array HFA1212 HFA3102 differential Amplifiers gain 100 Transistor Array differential amplifier R8200 differential pair transistor
Contextual Info: Single-Ended To Differential Twisted Pair Driver TM Application Note May 1997 AN9723 Introduction cause distortion. R5 adjusts the current through both transistors, and because the gain is proportional to the emitter current R5 functions as a gain control. If the gain

differential pair transistor

Abstract: AN9723 Dual Long-Tailed Pair Transistor Array HFA1212 HFA3102
Contextual Info: Single-Ended To Differential Twisted Pair Driver Application Note May 1997 AN9723 Introduction cause distortion. R5 adjusts the current through both transistors, and because the gain is proportional to the emitter current R5 functions as a gain control. If the gain range is too

600 watt smps schematic viper50A

Abstract: VIPER50 application note VIPer50 1000 watt mosfet power amplifier 500 watt smps schematic 600 watt smps schematic circuit diagram of 4000 watt smps full bridge viper 224 VIPer 50A Per50
Contextual Info: V IP e r 5 0 /S P V IP e r 5 0 A /A S P SM PS PRIMARY I.C. PRELIM IN ARY DATA TYPE V dss In R DS o n V IP e r5 0 /S P 620V 1.5 A 5 Cl V IP e r5 0 A /A S P (*) 70 0V 1.5 A 5. 7 a (*) T a rg e t d a ta fo r V IP o w e r5 0 A /A S P FEATURE . ADJUSTABLE SWITCHING FREQUENCY UP

Diode Equivalent 1n4148

Abstract: 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent resistor MICROWAVE TRANSISTOR equivalent diode for 1n4148 equivalent 2N2219 transistor 1N4148
Contextual Info: Philips Semiconductors Product specification Microwave Transistors General APPLICATION INFORMATION COMPONENT DESCRIPTION VALUE A amplifier D.U.T. microwave transistor TR transistor D diode C 1,C 2 tantalum capacitor 22 nF, 50 V R1 resistor 2.2 kß ±5% R2, R3, R5, R6

Contextual Info: rZ 7 Ä T# S G S -T H O M S O N iM O ig œ iiL iiera *® V IP e r5 0 /S P V IP e r5 0 A /A S P SMPS PRIMARY I.C. P R E L IM IN A R Y D A T A TYPE V dss In RDS on V IP er50/S P 620V 1.5 A 5 Q. V IP er50A /A S P (*) 700V 1.5 A 5.7 Q. (*) Target data for VIPower50A/ASP

Contextual Info: r Z ^ 7 7 # S G S - T H O [ïfflo e œ M S O N V IP e r 5 0 /S P iL ie r a « ® V IP e r 5 0 A /A S P SMPS PRIMARY I.C. AD VA N C E DATA TYPE V dss In RDS on V IP e r5 0 /S P 600V 1.5 A 5 Q. V IP e r5 0 A /A S P (*) 670V 1.5 A 6 .6 Q. (*) In developm ent

MT3S46T

Contextual Info: MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.2dB @f=2GHz · High Gain:|S21e| =11.5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM

DC voltage meter

Contextual Info: KOA SPEER ELECTRONICS, INC. TN-194 R5 AHA 7/14/03 Chip Tantalum Solid Electrolytic Capacitor Type TMU CERTIFIED 1. General 1-1 Scope of Application This document applies to miniaturized chip tantalum solid electrolytic capacitors for applications in transistorized circuits of electronic devices.

p-channel mosfet

Abstract: 2N7522 p-channel 200V 2n752 iGSS 80 nA Vgs 0v
Contextual Info: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7522 200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -200V 0.505 Ω -8.0A Absolute Maximum Ratings

MT3S111TU

Contextual Info: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05

2N7524

Abstract: smd 58a transistor 6-pin Zero-Gate Voltage Drain Current 60-VOLT 2n752 mosfet nA idss
Contextual Info: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7524 60 Volt, 0.015 Ω , RAD Hard MOSFET Package: SMD-2 R5 Product Summary Hex Size Technology BV DSS RDS on ID 6 RAD Hard -60V 0.015 Ω -75*A Absolute Maximum Ratings

2N7519

Contextual Info: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7519 30 Volt, 0.035 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -30V 0035 Ω -22*A Absolute Maximum Ratings

Contextual Info: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 High Gain: |S21e| =12.5 dB typ. (@ f=1 GHz) 2 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR R5 1 1 0.7±0.05

Contextual Info: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05

INVERTER 1A 12V

Abstract: 12v inverter circuit 2N4401 2N4403 EC31QS04 MAX1856 Si9424DY VP2-0066 33mOhm
Contextual Info: 04/18/01 - RWY +3.5V to -12V at 300mA. This uses the MAX1856, transistors to invert the gate drive, and an inductor to make an inverter. This circuit has not been built and some tweaking may be necessary. N1 Si9424DY R7 100k 33mOhm, -20V +3.5V INPUT R5 270

DMA366AM

Contextual Info: DMA366AM Tentative Total pages page DMA366AM Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuit Marking Symbol : R5 Package Code : SSSMini6-F2-B Internal Connection 6 5 4 Absolute Maximum Ratings Ta = 25 °C

100 pf, ATC Chip Capacitor

Abstract: motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer
Contextual Info: MOTOROLA Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 PHOTOMASTER CASE 305C–02, STYLE 1 SOE200–PILL R4 R5 R6 + VCC R7 – Q1 R2 R8 R3 C9 C4 C3 C10 TL11 TL10 C5 TL5 RF INPUT C8 TL6

BFG425W

Abstract: BP317 micro amplifier 471 Hewlett-Packard transistor microwave philips 23 0805CS philips application notes
Contextual Info: APPLICATION INFORMATION 1.9 GHz low noise amplifier with the BFG425W Philips Semiconductors Application information 1.9 GHz low noise amplifier with the BFG425W CIRCUIT DIAGRAM R5 handbook, full pagewidth C6 R1 R4 R3 C2 C3 +Vsupply C4 L2 L1 input 50 Ω C5

Amp. mosfet 1000 watt

Abstract: transformer less power supply 12 volt 3A 1000 watt ferrite transformer mathcad flyback design Amp. mosfet 500 watt mosfet 1000 amper transistor m 9587 Diode fast 8 amper RM6S/CSVS-RM6S/LP-1S-8P Switchmode power supply handbook
Contextual Info: SWITCHING POWER SUPPLY DESIGN: CONTINUOUS MODE FLYBACK CONVERTER Written by Michele Sclocchi michele.sclocchi@nsc.com Application Engineer National Semiconductor Typical Flyback power supply: D4 N=18T C10 220p R5 10 16V D2 R1 49.9K N=6T D5 D3 Q1 20 - 55V N=18T

Contextual Info: R5 5 2 8 Z SERI ES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130513 OUTLINE The R5528Z001A is a CMOS-based overvoltage protector IC with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as

LP3982IMM-ADJ

Abstract: LMC7215 LP3982 MAX8860 LM385A-1
Contextual Info: National News LP3982 February 2002 www.national.com/pf/LP/LP3982.html Low Dropout, 300 mA CMOS Linear Regulator Typical Application OUT IN R1 2M R6 180k R5 6.04M LP3982 2.2 µF FAULT 4 Cells SHDN GND LMC7215 2.2 µF R2 768k VREF LM385A-1.2V Product Availability

2N 6154 Triac

Abstract: MSP430 TM11 TM12 TM21 TM22 TM31 TM41 TM42 631013 read switch
Contextual Info: The Timer_A P01 MOV R5,MAINHW ; Measure pos. mains half wave SUB PRVTAR,MAINHW ; Difference is length of pos. HW ; ; If STTRIAC is not 0 0 = inactivity then the next gate ; firing is prepared ; P03 TST.B STTRIAC ; JZ P02 ; STTRIAC = 0: no activity MOV.B

opamp 741

Abstract: 741 op-amp 741 opamp OP 741 Ic1-741 dual 2N3904 NPN Transistor Q1 2N2222 electret mic 741 Ic1 1N914/1N4148
Contextual Info: Sound Activated Relay Parts List: Rx = 10K C1,C2,Cbias R1 = 1K C3 R2 = 100K C4,Cx R3 = 100K Ry R4 = 25K D1,D2 R5 = 2K7 D3 Page 1 of 1 = = = = = = 0.1uF, ceramic 1uF, electrolytic 10uF, electrolytic Relay 1N914,1N4148,NTE519 1N4001 Q1 = 2N2222,2N3904, etc.

flash trigger transformer

Abstract: xenon inverter circuit xenon light source circuit diagram flyback transformer 4kV Xenon Flash 6v 400V, DC-AC INVERTER light source xenon flash tube xenon tube "Flash tube" pulse transformer transistor
Contextual Info: Design Note 25 Issue 2 October 1995 Flash Gun Inverter Using Super E-Line Bipolar Transistors RM 6 CORES 0.15mm GAP D3 BY206GP 10 R1 390 128 23 NEON C1 6V 100uF 10V R2 68 ZTX 300 T2 C3 750uF 350V ZTX 650 TR1 TR2 R4 1M D2 1N4148 0.1uF D1 R3 1N4148 680K R5 3M