R1120A Search Results

sch2080

Abstract: SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM
Contextual Info: SCH2080KE SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed

2132M

Abstract: 576u
Contextual Info: Schottky Barrier Diode RB411VA-50 Dimensions Unit : mm Applications General rectification Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 2.5±0.2 Features 1) Small mold type. (TUMD2) 2) High reliability. 0.8 0.5 2.0 1.3±0.05

Contextual Info: Data Sheet Schottky Barrier Diode RB481Y-90 Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) 0.5 0.22±0.05 (3) 1.2±0.1 (4) 1.55 0.13±0.05 Construction Silicon epitaxial planar (1) 0.5 1.6±0.1 1.6±0.05

Contextual Info: Data Sheet SPR-54 Series Features ・Viewing angle 2θ 1/2 : 45 Color Type M V Specifications Viewing angle 2θ 1/2 / 45 : Standard Chip Structure Part No. • ■ SPR-54MVW Absolute Maximum Ratings Ta＝25℃ Electrical and Optical Characteristics (Ta＝25℃)

Contextual Info: Data Sheet SML-21 Series 2012（0805） 2.0x1.25mm（t=0.8mm） Features ・Abundant color variations with diverse luminous intensity types Color Type V U D Y W M P Specifications Part No. • SML-212VT ■ SML-210VT ■ SML-212U2T A ■ SML-211UT Absolute Maximum Ratings (Ta＝25℃)

Contextual Info: 1.8V Drive Nch MOSFET RUE003N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4) Drive circuits can be simple.

Contextual Info: Data Sheet SLA-370MT / SLA-360MT Features ・Viewing angle 2θ 1/2 : 25 SLA-370MT , 2θ 1/2 : 40 (SLA-360MT) ・High brightness Color Type M Specifications Viewing angle 2θ 1/2 / 25 ,40 : Standard Chip Structure Part No. • SLA-370MT GaP ■ SLA-360MT Absolute Maximum Ratings (Ta＝25℃)

Contextual Info: Data Sheet SLR-343 Series Features Color Type ・Viewing angle 2θ 1/2 : 40° ・Competent to direct mount V D Y M P E B WB Specifications Viewing angle 2θ 1/2 / 40 : Standard Chip Structure Part No. Absolute Maximum Ratings Ta＝25℃ Electrical and Optical Characteristics (Ta＝25℃)

Contextual Info: 1/4 • S t r u c t u r e ■ P r o d u c t Semiconductor integrated circuit DSC/DVC system power LSI ■ M BD9639MWV o d e l ■ F u n c t i o n s 1 (2) (3) 6ch DC/DC converter ・CH1 Boost FET embedded ・CH2 Buck FET embedded ・CH3 Buck-Boost FET embedded

Contextual Info: Data Sheet 5V/200mA Output Isolated DC/DC converter BP5512A Absolute Maximum Ratings Dimensions Unit : mm (Ta=25°C) Tcmax 105 °C Maximum output current Withstand voltage Iomax VI 200 AC2300 mA V 28.2MAX 17.2MAX Ambient temperature + the module self-heating≤Tcmax

Contextual Info: Data Sheet Zener diode STZ6.2N Applications Voltage regulation Anode common twin type Dimensions (Unit : mm) Land size figure (Unit : mm) 2.9±0.2 各リー ドと も ＋0.1 同lead 寸法has same dimension 0.4 －0.05 Each Features 1) Small mold type. (SMD3)

Contextual Info: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6

2SA2092

Contextual Info: 1A / 60V Bipolar transistor 2SA2092 Features 1 High speed switching. tf : Typ. : 30ns at IC = 1A) 2) Low saturation voltage. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong discharge resistance for inductive load and capacitance load.

RSX071VA-30

Contextual Info: Data Sheet Schottky barrier Diode RSX071VA-30 Dimensions Unit : mm Applications General rectification. Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 2.5±0.2 Features 1) Small mold type. (TUMD2) 2) Low VF 3) High reliability.

SD 4652

Abstract: BU9794A BU9794AKV SEG2-32 bu9794 BU97950
Contextual Info: LCD Segment Drivers Standard Segment Drivers BU9795AKV/FV/GUW,BU9794AKV,BU97950FUV/KS2 No.11044EBT06 ●Description ROHM standard function segment driver series achieve “Ultra-Low power consumption”. Also these drivers need not external components. And this driver series is very simple that only has segment driver function. So, these driver series are

RB481Y-40

Abstract: 686mA
Contextual Info: Data Sheet Schottky Barrier Diode RB481Y-40 lApplications Rectifying small power lDimensions Unit : mm lLand size figure (Unit : mm) 0.45 0.5 1.6±0.1 1.6±0.1 0.22±0.05 1.55 (3) 1.2±0.1 (4) 3)High reliability. 1.6±0.1 1.6±0.05 lFeatures 1)Ultra small mold type. (EMD4)

Contextual Info: Data Sheet SLI-560 / SLA-560 Series Features ・Viewing angle 2θ 1/2 : 40 ・High brightness Color Type U D Y M B WB Specifications Viewing angle 2θ 1/2 / 40 : High brightness Part No. Chip Structure Absolute Maximum Ratings Ta＝25℃ Electrical and Optical Characteristics (Ta＝25℃)

Contextual Info: Switching Diode 1SS380 Dimensions Unit : mm Applications High speed switching Land size figure (Unit : mm) 0.1±0.1 0.05 0.9MIN. 2.5±0.2 1.7±0.1 Features 1)Ultra small mold type. (UMD2) 2)High reliability 2.1 0.8MIN. 1.25±0.1 UMD2

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

2SA2092

Abstract: 1A60V
Contextual Info: 1A / 60V Bipolar transistor 2SA2092 Dimensions Unit : mm Features 1) High speed switching. (tf : Typ. : 30ns at IC = 1A) 2) Low saturation voltage. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong discharge resistance for inductive load and

R5009FNX

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5009FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1)Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage

2SA2088

Abstract: 2SC5876 T106
Contextual Info: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

BHNB1WHFV

Abstract: BH25NB1WHFV BH30NB1WHFV BH33NB1WHFV
Contextual Info: CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□NB1WHFV series No.11020EBT04 ●Description The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple rejection ratio of 80 dB Typ., 1 kHz . They are ideal for use in high-performance, analog applications and offer improved line

RB205T-60

Contextual Info: Data Sheet Schottky barrier diode RB205T-60 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability 6 205 Construction Silicon epitaxial planer