R10D Search Results

Contextual Info: RMLV0408E Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0206EJ0100 Rev.1.00 2014.2.27 Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher

Contextual Info: Datasheet PD44164095B-A μPD44164185B-A 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0016EJ0100 Rev.1.00 Dec 13, 2010 Description The μPD44164095B-A is a 2,097,152-word by 9-bit and the μPD44164185B-A is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS sixtransistor memory cell.

Contextual Info: Datasheet PD44165084B-A μPD44165094B-A μPD44165184B-A μPD44165364B-A 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0018EJ0100 Rev.1.00 Dec 13, 2010 Description The μPD44165084B-A is a 2,097,152-word by 8-bit, the μPD44165094B-A is a 2,097,152-word by 9-bit, the

Contextual Info: R1LV5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV5256E Series has realized

Contextual Info: Preliminary Datasheet R1EX25512ASA00I R1EX25512ATA00I Serial Peripheral Interface 512K EEPROM 64-Kword x 8-bit R10DS0044EJ0100 Rev.1.00 Oct.04, 2010 Description R1EX25xxx series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and

R1LP0108ESA-7SR

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: Preliminary Datasheet R1EX24512BSAS0I R1EX24512BTAS0I Two-wire serial interface 512k EEPROM 64-kword x 8-bit R10DS0026EJ0500 Rev.5.00 Dec 18, 2013 Description R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They

Contextual Info: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Preliminary Datasheet R1EX25008ASA00G/R1EX25008ATA00G R1EX25016ASA00G/R1EX25016ATA00G Serial Peripheral Interface 8k EEPROM 1024-word  8-bit 16k EEPROM (2048-word  8-bit) 105°C SPI-bus EEPROM R10DS0083EJ0100 Rev.1.00 Oct. 02, 2012 Description R1EX25xxx series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and

Contextual Info: Data Sheet R1EX24008ASAS0I R1EX24008ATAS0I Two-wire serial interface 8k EEPROM 1024-word x 8-bit R10DS0210EJ0100 Rev.1.00 Nov 08, 2013 Description R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MONOS memory

Contextual Info: Datasheet R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0144EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: Preliminary Datasheet R1EX24032ASAS0G R1EX24032ATAS0G Two-wire serial interface 32k EEPROM 4-kword x 8-bit 2 105°C I C-bus EEPROM R10DS0081EJ0300 Rev.3.00 Jan 30, 2014 Description R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).

PRSP0008DF-B

Abstract: R1EX25512ASA00I
Contextual Info: Preliminary Datasheet R1EX25512ASA00I R1EX25512ATA00I Serial Peripheral Interface 512K EEPROM 64-Kword x 8-bit R10DS0044EJ0100 Rev.1.00 Oct.04, 2010 Description R1EX25xxx series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and

qk1 -0120

Abstract: PD48011418 PD48011436 QK101
Contextual Info: Preliminary Datasheet PD48011418 μPD48011436 1.1G-BIT Low Latency DRAM-III R10DS0013EJ0001 Rev.0.01 Aug 18, 2010 Common I/O Burst Length of 4 Description The μPD48011418 is a 67,108,864-word by 18-bit and the μPD48011436 is a 33,554,432-word by 36-bit synchronous

Contextual Info: Datasheet PD48576209 μPD48576218 μPD48576236 R10DS0063EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Common I/O Description The μPD48576209 is a 67,108,864-word by 9 bit, the μPD48576218 is a 33,554,432 word by 18 bit and the μPD48576236 is a 16,777,216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with

PD44325092B

Abstract: PD44325362BF5-E35-FQ1-A jtag timing
Contextual Info: Datasheet PD44325092B-A μPD44325182B-A μPD44325362B-A 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0038EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44325092B-A is a 4,194,304-word by 9-bit, the μPD44325182B-A is a 2,097,152-word by 18-bit and the

QK1-1

Abstract: PD48011318 qk1# qk101 0Z99
Contextual Info: Preliminary Datasheet PD48011318 μPD48011336 R10DS0012EJ0001 Rev.0.01 Aug 18, 2010 1.1G-BIT Low Latency DRAM-III Common I/O Burst Length of 2 Description The μPD48011318 is a 67,108,864-word by 18-bit and the μPD48011336 is a 33,554,432-word by 36-bit synchronous

Contextual Info: Datasheet PD44325092B μPD44325182B μPD44325362B 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0038EJ0200 Rev.2.00 August 11, 2011 Description The μPD44325092B is a 4,194,304-word by 9-bit, the μPD44325182B is a 2,097,152-word by 18-bit and the μPD44325362B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with

Contextual Info: Preliminary Datasheet R1EV24064ASAS0I Two-wire serial interface 64k EEPROM 8-kword  8-bit R10DS0127EJ0001 Rev.0.01 Aug. 24, 2012 Description R1EV24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MONOS memory

Contextual Info: R1LV0208BSA 2Mb Advanced LPSRAM 256k word x 8bit R10DS0050EJ0100 Rev.1.00 2011.03.30 Description The R1LV0208BSA is a family of low voltage 2-Mbit static RAMs organized as 262,144-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0208BSA has realized higher density,

ieee 1149

Contextual Info: Datasheet PD44325084B-A μPD44325094B-A μPD44325184B-A μPD44325364B-A 36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0039EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44325084B-A is a 4,194,304-word by 8-bit, the μPD44325094B-A is a 4,194,304-word by 9-bit, the

R1LP0108ESP

Abstract: R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202
Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0200 Rev.2.00 2011.01.14 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: Datasheet R1QEA4436RBG, R1QEA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0142EJ0100 Rev.1.00 Oct 21, 2013 Description The R1QEA4436RBG is a 4,194,304-word by 36-bit and the R1QEA4418RBG is a 8,388,608-word by 18-bit