R104 TRANSISTOR Search Results

C502 Zener diode

Abstract: vr301 potentiometer VR501 F101 Type T fuse TRANSISTOR C309 4518BE VR502 vr302 potentiometer 2sc1015-GR 2SC1015GR
Contextual Info: ^ SERVICING INFORMATION B X PRECISION* M O D E L 3011A 3011B FUNCTION GENERATOR PARTS LIST SCHEMATIC SYMBOL DESCRIPTION B+K PRECISION PART NUMBER RESISTORS Unlisted resistors are +5%, 1/4 W. See Schematic for value. R101, 102 R104 R105 R205 R206 R207 R208

HC49 MEGATEC

Abstract: c103 TRANSISTOR transistor c317 c102 TRANSISTOR TRANSISTOR C307 C312 diode smd capacitor philips 0805 capacitor 100nf 50v 0805 datasheet c103 TRANSISTOR equivalent 0805B104K500CT
Contextual Info: DEMO9RS08KA2 Schematic and Bill of Material DC01098 SW102 RESET SW101 SW0 VDD GND GND GND 470R R108 470R R106 470R Q103 BSS138 Q102 BSS138 Q101 BSS138 www.softecmicro.com HB YELLOW LED2 LD103 RED LED1 LD102 C104 100nF R104 GND GND C103 100nF R103 10K VDD RED

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

TL113

Abstract: tl201 TL217 w3 smd transistor transistor c111
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200

c102 TRANSISTOR

Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

Contextual Info: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

HA13605

Abstract: R104 Diode
Contextual Info: HA13605-Three-Phase Brushiess Motor Driver Description The HA13605 is a three-phase brushiess motor driver IC that provides digital speed control on chip. It was developed for use as the drum motor driver in plain paper copiers and has the following

Hitachi DSA00279

Contextual Info: HA13605A Three-Phase Brushless Motor Driver ADE-207-201A Z 2nd. Edition February, 1998 Description The HA13605A is a three-phase brushless motor driver IC that provides digital speed control on chip. It was developed for use as the drum motor driver in plain paper copiers and has the following functions and

HA13605A

Abstract: R104 Diode TRANSISTOR c104 u 19 c109 C101 C102 C104 C109 C110 R101
Contextual Info: HA13605A Three-Phase Brushless Motor Driver ADE-207-201A Z 2nd. Edition February, 1998 Description The HA13605A is a three-phase brushless motor driver IC that provides digital speed control on chip. It was developed for use as the drum motor driver in plain paper copiers and has the following functions and

TP212

Abstract: c102 TRANSISTOR SM0402 IN4148W c103 TRANSISTOR samsung reflow profile TP209-TP212 CDRH8D28-4R7 transistor c100b c106 TRANSISTOR
Contextual Info: ISL8502EVAL1Z: 2.5A Synchronous Buck Regulator with Integrated MOSFETs Application Note 2.5A Synchronous Buck Regulator with Integrated MOSFETs The ISL8502 is a synchronous buck controller with internal MOSFETs packaged in a small 4mmx4mm QFN package. The ISL8502 can support a continuous load of 2.5A and has

TRANSISTOR D206

Abstract: IC301 EER-4445 Zener C212 IC-101 IC101 EER4445 C106 Series BD101 zener c109
Contextual Info: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The

IC301

Abstract: TRANSISTOR D206 D2046 Zener C212 IC101 Transistor No C110 FS6S1565RB FS6S1265RB d206 diode EER4445
Contextual Info: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The

TRANSISTOR D206

Abstract: KA5S-SERIES IC301 Zener C212 IC LM7805 OF BLOCK diagram D203 diode rg4c mosfet 4108 FS6S1265RE FS6S1565RB
Contextual Info: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction FS6S series is a Fairchild Power Switch FPS that is specially designed for off-line SMPS of CRT monitor with minimal external components. This device is a current mode

TRANSISTOR D206

Abstract: IC301 EER4445 Zener C212 c203 opto coupler 4 pin EER-4445 D2046 opto d206 diode rg4c FS6S1265RE
Contextual Info: www.fairchildsemi.com Application Note 4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The

TL272

Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty

c102 TRANSISTOR

Abstract: C102 M transistor transistor c102 c103 K c103 TRANSISTOR transistor c114 HA13614FH c112 TRANSISTOR transistor c114 diagram Hitachi motor driver
Contextual Info: HA13614FH Combo Spindle & VCM Driver ADE-207-246D (Z) Preliminary 5th Edition October 1998 Description This COMBO driver for HDD application consists of sensorless spindle driver and BTL type VCM driver. “PWM soft switching function” for low power dissipation and less commutation acoustic noise at the same

c102 TRANSISTOR

Abstract: TESTING A c114 transistor transistor c114 transistor c102 Hitachi motor driver HA13614FH C116 transistor c10501 transistor c117 Combo Driver
Contextual Info: HA13614FH Combo Spindle & VCM Driver ADE-207-246D (Z) Preliminary, 5th Edition Oct. 1, 1998 Description This COMBO driver for HDD application consists of sensorless spindle driver and BTL type VCM driver. “PWM soft switching function” for low power dissipation and less commutation acoustic noise at the same

CQ0765RT circuit diagram

Abstract: CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201
Contextual Info: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a

Contextual Info: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz

VdS 2093 2009

Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz

CQ1265RT

Abstract: CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265
Contextual Info: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a

c103 TRANSISTOR equivalent

Abstract: TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105
Contextual Info: 1 Introduction Increasingly power supplies used in applications such as home appliance, office automation,communications and industrial area need to operate on the main AC line 100V and 200V as products are manufactured for global markets. Traditionally power supplies have been designed to operate on either 100V

CQ0765RT

Abstract: CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU
Contextual Info: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a