R09DS0033EJ0200 Search Results
R09DS0033EJ0200 Datasheets Context Search
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Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm |
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NE5550279A R09DS0033EJ0200 NE55502ine WS260 HS350 R09DS0033EJ0200 NE5550279A | |
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Contextual Info: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) |
Original |
NE5550279A R09DS0033EJ0200 NE5550279A NE5550279A-A |