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    Text: Preliminary Datasheet 2SK1629-E1-E 500V - 30A - MOS FET High Speed Power Switching R07DS1197EJ0200 Rev.2.00 Mar 26, 2014 Features • Low on-resistance RDS on = 0.22 Ω typ. (at ID = 15 A, VGS= 10 V, Ta = 25°C) • High speed switching • Low drive current


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