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R07DS1176EJ0600 Datasheets Context Search
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Contextual Info: Data Sheet HAT1108C R07DS1176EJ0600 Previous: REJ03G1234-0500 Rev.6.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 155 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting |
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HAT1108C R07DS1176EJ0600 REJ03G1234-0500) PWSF0006JA-A Sym2886-9022/9044 |