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    Text: Preliminary Datasheet RJK1055DPB 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching R07DS1058EJ0200 Previous: REJ03G1887-0100 Rev.2.00 Apr 11, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V)


    Original     		RJK1055DPB R07DS1058EJ0200 REJ03G1887-0100) PTZZ0005DA-A PDF