R07DS0829EJ0003 Search Results
R07DS0829EJ0003 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter R07DS0829EJ0003 Rev.0.03 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C) High speed switching |
Original |
RJP1CS06DWT/RJP1CS06DWA R07DS0829EJ0003 RJP1CS06DWT-80 RJP1CS06DWA-80 |