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    Text: Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0200 Rev.2.00 Jul 13, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D7BDPQ-E0 R07DS0795EJ0200 PRSS0003ZE-A O-247)

    RJH60D7BDPQ-E0

    Abstract: rjh60d7bdpq
    Text: Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0200 Rev.2.00 Jul 13, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D7BDPQ-E0 R07DS0795EJ0200 PRSS0003ZE-A O-247) RJH60D7BDPQ-E0 rjh60d7bdpq