R07DS0540EJ0100 Search Results
R07DS0540EJ0100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Preliminary Datasheet R2J20655BNP R07DS0548EJ0101 Previous No.: R07DS0540EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver |
Original |
R2J20655BNP R07DS0548EJ0101 R07DS0540EJ0100) R2J20655BNP | |
|
Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C) Trench gate and thin wafer technology |
Original |
RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B | |
|
Contextual Info: Preliminary Datasheet R2J20655BNP R07DS0548EJ0101 Previous No.: R07DS0540EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver |
Original |
R2J20655BNP R07DS0548EJ0101 R07DS0540EJ0100) R2J20655BNP | |
RJP60F0DPEContextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C) Trench gate and thin wafer technology |
Original |
RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B RJP60F0DPE | |
|
Contextual Info: Preliminary Datasheet R2J20655BNP R07DS0540EJ0100 Rev.1.00 Sep 01, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this |
Original |
R2J20655BNP R07DS0540EJ0100 R2J20655BNP |