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Contextual Info: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) |
Original |
RQA0009TXDQS R07DS0492EJ0200 REJ03G1520-0100) PLZZ0004CA-A | |
RQA0009
Abstract: 17-33 0952
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Original |
RQA0009TXDQS R07DS0492EJ0200 REJ03G1520-0100) PLZZ0004CA-A RQA0009 17-33 0952 |