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    RJH60T4

    Abstract: RJH60
    Text: Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60T4DPQ-A0 R07DS0460EJ0100 PRSS0003ZH-A O-247A) RJH60T4 RJH60 PDF

    rjh60t4

    Abstract: rjh60t
    Text: Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60T4DPQ-A0 R07DS0460EJ0100 PRSS0003ZH-A O-247A) rjh60t4 rjh60t PDF