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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK3210 L , 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Rev.4.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3210 R07DS0409EJ0400 REJ03G0414-0300) PRSS0004AE-A PRSS0004AE-B Note14

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK3210 L , 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Rev.4.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3210 R07DS0409EJ0400 REJ03G0414-0300) PRSS0004AE-A PRSS0004AE-B